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DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P11618EJ4V0DS00 (4th edition)
Date Published September 2000 NS CP(K)
Printed in Japan
©
1996, 2000
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE34018
L to S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
The mark •
••
• shows major revised poi nts.
FEATURES
• Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz
• High associated gain: Ga = 16 dB TYP. @ f = 2 GHz
• Gate width: Wg = 400
µ
m
• 4-pin super minimold package
• Tape & reel packaging only available
ORDERING INFORMATION
Part Number Package Supplyi ng Form
NE34018-T1 4-pin super mini m ol d • 8 mm wide embossed tapi ng
• Pin 3 (Sourc e), Pin 4 (Drain) f ace the perforation side of the tape
• Qty 3 kpcs/reel
NE34018-T2 • 8 mm wide em bossed tapi ng
• Pin 1 (Sourc e), Pin 2 (Gate) face the perforation s i de of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, consult your NEC sales representative (Part number for sample order:
NE34018).
ABSOLUTE MAXIMUM RATINGS (TA = +25 °
°°
°C)
Parameter Symbol Ratings Unit
Drain to Sourc e Voltage VDS 4.0 V
Gate to Source Voltage VGSO −3.0 V
Gate to Drain V ol tage VGDO −3.0 V
Drain Current IDIDSS mA
Total Power Dissipation Ptot 150 mW
Channel Temperature Tch 125 °C
Storage Temperat ure Tstg −65 to +125 °C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
Data Sheet P11618EJ4V0DS00
2
NE34018
RECOMMENDED OPERATING CONDITIONS (TA = +25 °
°°
°C)
Parameter Symbol MIN. TYP. MAX. Unit
Drain to Sourc e Voltage VDS −2.0 3.0 V
Drain Current ID−530mA
Input Power Pin −−0dBm
ELECTRICAL CHARACTERISTICS (TA = +25 °
°°
°C)
Parameter Symbol Test Condit i ons MIN. TYP. MAX. Unit
Gate to Source Leak Current IGSO VGS = −3.0 V −0.5 10
µ
A
Saturated Drai n Current IDSS VDS = 2.0 V , V GS = 0 V 30 −120 mA
Gate to Source Cutoff Voltage VGS (off) VDS = 2.0 V, I D = 100
µ
A−0.2 −0.8 −2.0 V
Transconductance gmVDS = 2.0 V, I D = 5 mA 30 −−
mS
Noise Figure NF VDS = 2.0 V, ID = 5 mA, f = 2 GHz −0.6 1.0 dB
Associated Gain Ga14 16 −dB
Power G a in GS−18 −dB
Gain 1 dB Compression Output Power PO (1 dB) VDS = 3.0 V, I D = 30 mA (RF off),
f = 2 GHz −15 −dBm
IDSS CLASSIFICATION
Rank IDSS (mA) Marking
63 30 to 65 V63
64 60 to 120 V64
Data Sheet P11618EJ4V0DS00 3
NE34018
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °
°°
°C)
250
200
150
100
50
050 100 150 200
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
–0.2 V
–0.4 V
–0.6 V
V
GS
= 0 V
120
100
80
60
40
20
012345
Drain Current I
D
(mA)
Drain to Source Voltage V
DS
(V)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
= 2.0 V
100
80
60
40
20
0
–2.0 –1.0 0
Drain Current I
D
(mA)
Gate to Source Voltage V
GS
(V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
DS
= 2.0 V
f = 2 GHz
G
a
NF
1.0
0.8
0.9
0.7
0.5
0.6
0.4
0.3
18
16
14
12
13
15
17
11
0102030
Noise Figure NF (dB)
Associated Gain G
a
(dB)
Drain Current I
D
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN CURRENT
Remark The graphs indicate nominal characteristics.
Data Sheet P11618EJ4V0DS00
4
NE34018
S-PARAMETERS
MAG. AND ANG.
VDS = 2.0 V, ID = 5 mA
Frequency S11 S21 S12 S22
MHzMAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
(deg.) (deg.) (deg.) (deg.)
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
0.997
0.994
0.989
0.983
0.978
0.972
0.954
0.960
0.951
0.945
0.934
0.926
0.914
0.901
0.887
0.807
0.787
0.775
0.755
0.745
0.732
0.720
0.706
0.691
0.677
0.657
−15.9
−19.1
−22.0
−25.1
−27.9
−31.0
−33.8
−36.1
−38.8
−41.2
−43.7
−46.3
−48.4
−50.7
−52.9
−58.3
−60.6
−62.9
−64.7
−66.8
−68.5
−70.8
−72.8
−75.3
−77.2
−79.5
5.053
5.070
4.994
4.992
4.975
4.893
4.879
4.824
4.790
4.746
4.696
4.655
4.588
4.526
4.463
4.308
4.241
4.193
4.122
4.069
4.017
3.977
3.913
3.892
3.833
3.783
165.6
162.8
160.1
157.4
154.9
152.0
149.4
147.1
144.6
142.2
139.8
137.4
135.1
132.8
130.7
124.8
122.6
120.4
118.4
116.5
114.7
112.7
110.7
108.9
106.9
105.0
0.020
0.024
0.027
0.031
0.035
0.039
0.042
0.045
0.048
0.050
0.054
0.056
0.058
0.061
0.063
0.064
0.066
0.067
0.070
0.070
0.072
0.074
0.075
0.077
0.078
0.080
82.6
80.1
79.0
77.0
75.1
73.7
71.8
71.0
69.9
68.9
68.2
65.4
65.7
63.9
62.7
58.5
57.1
56.1
55.8
54.8
55.0
54.5
53.1
53.1
51.7
51.5
0.805
0.801
0.800
0.798
0.797
0.793
0.791
0.792
0.785
0.782
0.780
0.777
0.775
0.769
0.766
0.699
0.697
0.685
0.680
0.675
0.671
0.666
0.657
0.656
0.650
0.642
−9.0
−10.7
−12.3
−13.9
−15.4
−17.0
−18.4
−19.6
−20.9
−22.2
−23.4
−24.4
−25.5
−26.3
−27.3
−27.7
−28.6
−29.8
−30.2
−31.1
−31.9
−32.5
−33.6
−34.1
−34.8
−35.6
Data Sheet P11618EJ4V0DS00 5
NE34018
AMPLIFIER PARAMETERS
VDS = 2.0 V, ID = 5 mA
Frequency GUmax GAmax S212S122K Delay Mason’s U G1 G2
MHzdBdBdBdB nsdBdBdB
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
40.42
37.65
35.02
33.18
31.99
30.73
28.48
28.95
28.01
27.36
26.48
25.87
25.04
24.27
23.54
20.17
19.63
19.19
18.67
18.34
18.00
17.70
17.30
17.07
16.71
16.31
14.07
14.10
13.97
13.97
13.94
13.79
13.77
13.67
13.61
13.53
13.43
13.36
13.23
13.11
12.99
12.68
12.55
12.45
12.30
12.19
12.08
11.99
11.85
11.80
11.67
11.56
−34.10
−32.49
−31.28
−30.09
−29.02
−28.27
−27.56
−26.99
−26.40
−25.95
−25.35
−25.02
−24.73
−24.35
−23.99
−23.88
−23.67
−23.48
−23.16
−23.05
−22.91
−22.65
−22.46
−22.24
−22.10
−21.89
0.02
0.04
0.05
0.07
0.09
0.10
0.14
0.13
0.14
0.15
0.16
0.19
0.20
0.23
0.26
0.47
0.50
0.52
0.55
0.57
0.59
0.60
0.63
0.63
0.67
0.69
0.078
0.078
0.074
0.074
0.070
0.079
0.072
0.065
0.068
0.068
0.065
0.067
0.064
0.065
0.057
0.164
0.063
0.059
0.056
0.054
0.049
0.056
0.055
0.050
0.057
0.053
27.008
25.640
25.263
24.878
24.607
25.175
25.565
24.387
25.422
24.032
23.850
21.81
19.09
16.61
14.81
13.68
12.63
10.45
11.01
10.24
9.73
8.97
8.48
7.82
7.27
6.72
4.57
4.20
3.99
3.67
3.51
3.33
3.17
3.00
2.82
2.66
2.45
4.53
4.46
4.44
4.40
4.37
4.31
4.26
4.28
4.16
4.11
4.08
4.02
3.98
3.88
3.83
2.92
2.89
2.75
2.70
2.64
2.59
2.54
2.45
2.45
2.38
2.30
Data Sheet P11618EJ4V0DS00
6
NE34018
S-PARAMETERS
MAG. AND ANG.
VDS = 2.0 V, ID = 10 mA
Frequency S11 S21 S12 S22
MHz MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
(deg.) (deg.) (deg.) (deg.)
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
0.988
0.982
0.974
0.964
0.954
0.942
0.924
0.922
0.909
0.897
0.880
0.868
0.851
0.836
0.817
0.735
0.710
0.697
0.675
0.662
0.647
0.634
0.617
0.602
0.584
0.564
−18.2
−21.8
−25.0
−28.4
−31.5
−34.7
−37.8
−40.4
−43.2
−45.8
−48.4
−50.9
−53.2
−55.3
−57.6
−63.0
−65.4
−67.6
−69.4
−71.5
−73.0
−75.2
−77.3
−79.5
−81.5
−83.6
7.217
7.184
7.070
6.995
6.928
6.797
6.707
6.607
6.506
6.387
6.286
6.179
6.055
5.937
5.829
5.570
5.453
5.354
5.242
5.148
5.057
4.977
4.880
4.819
4.734
4.640
163.2
160.0
156.9
153.8
150.8
147.9
144.9
142.3
139.5
136.8
134.4
131.7
129.3
126.9
124.7
119.4
117.0
114.8
112.8
110.9
109.0
107.1
105.1
103.4
101.4
99.5
0.018
0.022
0.025
0.029
0.032
0.035
0.038
0.042
0.044
0.046
0.049
0.052
0.053
0.055
0.058
0.058
0.060
0.061
0.064
0.065
0.067
0.069
0.071
0.073
0.075
0.076
80.7
79.7
77.5
77.4
75.0
74.4
71.9
72.7
70.6
70.4
68.6
68.2
67.1
66.5
65.7
61.7
61.2
60.0
59.6
59.4
59.5
58.6
58.7
58.4
57.6
56.6
0.722
0.717
0.717
0.711
0.710
0.705
0.702
0.700
0.694
0.690
0.688
0.683
0.680
0.675
0.671
0.604
0.600
0.590
0.586
0.580
0.577
0.573
0.567
0.567
0.559
0.553
−9.7
−11.6
−13.4
−15.0
−16.6
−18.1
−19.7
−20.8
−21.9
−23.4
−24.4
−25.3
−26.4
−27.1
−27.8
−27.3
−28.1
−29.1
−29.5
−30.1
−30.6
−31.2
−32.1
−32.5
−33.2
−33.8
Data Sheet P11618EJ4V0DS00 7
NE34018
AMPLIFIER PARAMETERS
VDS = 2.0 V, ID = 10 mA
Frequency GUmax GAmax S212S122K Delay Mason’s U G1 G2
MHzdBdBdBdB nsdBdBdB
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
36.72
34.68
33.00
31.44
30.33
29.14
27.83
27.55
26.71
25.99
25.23
24.63
23.92
23.33
22.70
20.26
19.72
19.32
18.85
18.52
18.19
17.90
17.53
17.29
16.94
16.58
17.17
17.13
16.99
16.90
16.81
16.65
16.53
16.40
16.27
16.11
15.97
15.82
15.64
15.47
15.31
14.92
14.73
14.57
14.39
14.23
14.08
13.94
13.77
13.66
13.50
13.33
−34.88
−33.03
−31.95
−30.71
−29.79
−29.03
−28.43
−27.64
−27.23
−26.69
−26.24
−25.75
−25.45
−25.15
−24.68
−24.71
−24.48
−24.29
−23.88
−23.71
−23.54
−23.21
−23.02
−22.78
−22.53
−22.43
0.08
0.10
0.13
0.13
0.16
0.18
0.22
0.21
0.24
0.25
0.29
0.30
0.33
0.36
0.38
0.60
0.64
0.67
0.69
0.71
0.73
0.74
0.76
0.77
0.80
0.83
0.089
0.089
0.086
0.087
0.083
0.081
0.081
0.074
0.077
0.075
0.068
0.072
0.068
0.067
0.061
0.148
0.066
0.062
0.054
0.054
0.051
0.054
0.056
0.048
0.056
0.053
28.512
27.821
26.935
26.358
26.420
26.588
26.416
26.641
27.042
26.181
24.840
16.35
14.42
12.88
11.48
10.48
9.51
8.35
8.23
7.59
7.08
6.48
6.08
5.58
5.21
4.78
3.37
3.05
2.89
2.64
2.50
2.36
2.23
2.08
1.95
1.81
1.66
3.20
3.14
3.13
3.06
3.04
2.98
2.95
2.93
2.86
2.81
2.79
2.73
2.70
2.65
2.60
1.97
1.94
1.86
1.83
1.78
1.76
1.73
1.69
1.68
1.63
1.59
Data Sheet P11618EJ4V0DS00
8
NE34018
S-PARAMETERS
MAG. AND ANG.
VDS = 2.0 V, ID = 20 mA
Frequency S11 S21 S12 S22
MHz MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
(deg.) (deg.) (deg.) (deg.)
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
0.978
0.968
0.954
0.943
0.929
0.913
0.891
0.884
0.865
0.849
0.830
0.815
0.793
0.775
0.754
0.674
0.648
0.632
0.610
0.596
0.579
0.566
0.548
0.532
0.515
0.496
−20.1
−23.9
−27.5
−31.1
−34.4
−37.7
−40.8
−43.5
−46.4
−48.9
−51.4
−54.0
−56.3
−58.3
−60.4
−65.8
−68.1
−70.2
−71.9
−73.7
−75.2
−77.1
−79.3
−81.2
−83.0
−84.8
9.298
9.160
9.000
8.848
8.700
8.501
8.335
8.162
7.972
7.801
7.607
7.440
7.247
7.074
6.913
6.573
6.417
6.265
6.113
5.976
5.849
5.727
5.610
5.499
5.399
5.272
160.9
157.3
153.9
150.5
147.3
144.0
141.0
138.0
135.2
132.3
129.8
127.1
124.7
122.2
119.9
115.0
112.7
110.5
108.6
106.7
105.0
103.1
101.1
99.4
97.5
95.7
0.017
0.021
0.023
0.026
0.029
0.032
0.035
0.037
0.040
0.042
0.045
0.047
0.049
0.051
0.053
0.053
0.056
0.057
0.059
0.061
0.063
0.065
0.068
0.069
0.071
0.073
82.7
80.2
79.8
77.7
76.6
74.7
74.7
74.3
74.2
71.9
71.7
71.1
70.0
69.4
68.8
66.1
65.5
64.5
64.6
64.6
65.0
63.8
64.3
63.3
64.1
62.4
0.637
0.635
0.632
0.627
0.627
0.621
0.618
0.617
0.613
0.607
0.606
0.603
0.599
0.598
0.593
0.528
0.526
0.516
0.515
0.510
0.509
0.507
0.502
0.502
0.498
0.493
−10.0
−11.8
−13.7
−15.3
−16.8
−18.0
−19.6
−20.5
−21.7
−23.0
−24.0
−24.7
−25.6
−26.2
−26.8
−25.1
−25.7
−26.7
−26.7
−27.3
−27.8
−28.2
−29.1
−29.4
−30.0
−30.4
Data Sheet P11618EJ4V0DS00 9
NE34018
AMPLIFIER PARAMETERS
VDS = 2.0 V, ID = 20 mA
Frequency GUmax GAmax S212S122K Delay Mason’s U G1 G2
MHzdBdBdBdB nsdBdBdB
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
35.28
33.54
31.81
30.66
29.62
28.49
27.38
26.91
26.08
25.38
24.70
24.13
23.43
22.90
22.33
20.40
19.92
19.50
19.08
18.74
18.41
18.13
17.79
17.51
17.22
16.88
19.37
19.24
19.09
18.94
18.79
18.59
18.42
18.24
18.03
17.84
17.62
17.43
17.20
16.99
16.79
16.35
16.15
15.94
15.72
15.53
15.34
15.16
14.98
14.80
14.65
14.44
−35.33
−33.71
−32.71
−31.61
−30.78
−29.78
−29.14
−28.63
−28.04
−27.49
−26.88
−26.49
−26.16
−25.88
−25.46
−25.44
−25.02
−24.90
−24.53
−24.25
−23.96
−23.71
−23.29
−23.18
−22.93
−22.71
0.12
0.16
0.18
0.21
0.24
0.28
0.31
0.32
0.34
0.38
0.40
0.42
0.46
0.49
0.52
0.72
0.75
0.79
0.81
0.82
0.84
0.85
0.86
0.88
0.89
0.92
0.098
0.098
0.097
0.094
0.088
0.092
0.085
0.082
0.079
0.079
0.071
0.073
0.068
0.070
0.062
0.137
0.064
0.062
0.052
0.053
0.048
0.053
0.053
0.047
0.054
0.050
29.694
28.981
27.785
27.569
27.816
28.156
27.486
28.589
27.386
28.295
26.323
13.65
12.07
10.51
9.55
8.66
7.78
6.86
6.59
6.00
5.53
5.08
4.74
4.30
3.98
3.66
2.63
2.37
2.21
2.02
1.91
1.77
1.68
1.55
1.44
1.34
1.22
2.26
2.24
2.22
2.17
2.17
2.12
2.09
2.08
2.05
2.00
1.99
1.97
1.93
1.92
1.88
1.42
1.41
1.35
1.34
1.31
1.30
1.29
1.26
1.26
1.24
1.21
Data Sheet P11618EJ4V0DS00
10
NE34018
S-PARAMETERS
MAG. AND ANG.
VDS = 3.0 V, ID = 5 mA
Frequency S11 S21 S12 S22
MHz MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
(deg.) (deg.) (deg.) (deg.)
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.991
0.984
0.982
0.973
0.970
0.964
0.944
0.947
0.938
0.929
0.920
0.911
0.901
0.890
0.878
0.815
−15.2
−18.1
−20.8
−23.8
−26.6
−29.0
−32.0
−34.2
−36.7
−38.9
−41.3
−43.6
−45.7
−47.9
−49.8
−57.5
5.038
5.040
4.984
4.958
4.958
4.892
4.850
4.791
4.764
4.722
4.675
4.640
4.579
4.527
4.473
4.306
165.1
162.2
159.4
156.6
154.1
151.4
148.6
146.2
143.8
141.4
139.0
136.6
134.4
132.2
130.0
123.9
0.020
0.024
0.027
0.031
0.034
0.038
0.040
0.044
0.048
0.050
0.052
0.056
0.058
0.061
0.063
0.063
79.3
79.0
76.7
77.2
74.4
73.4
70.8
70.3
69.6
68.9
67.2
66.5
65.1
64.1
62.9
58.4
0.817
0.812
0.809
0.807
0.806
0.803
0.797
0.794
0.791
0.788
0.789
0.786
0.780
0.778
0.775
0.687
−9.8
−11.7
−13.6
−15.2
−16.8
−18.6
−20.1
−21.5
−23.1
−24.3
−25.7
−27.2
−28.3
−29.4
−30.5
−29.1
AMPLIFIER PARAMETERS
VDS = 3.0 V, ID = 5 mA
Frequency GUmax GAmax S212S122K Delay Mason’s U G1 G2
MHzdBdBdBdB nsdBdBdB
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
36.20
33.77
32.94
31.24
30.67
29.74
27.71
27.80
27.04
26.34
25.76
25.18
24.52
24.00
23.40
20.18
14.05
14.05
13.95
13.91
13.91
13.79
13.72
13.61
13.56
13.48
13.40
13.33
13.21
13.12
13.01
12.68
−34.16
−32.46
−31.29
−30.13
−29.27
−28.52
−27.86
−27.10
−26.43
−26.01
−25.69
−25.10
−24.80
−24.36
−24.05
−23.97
0.09
0.09
0.11
0.10
0.12
0.13
0.18
0.17
0.17
0.18
0.20
0.21
0.23
0.24
0.26
0.47
0.080
0.080
0.077
0.077
0.071
0.074
0.077
0.066
0.069
0.066
0.066
0.067
0.061
0.061
0.062
0.169
39.523
27.557
17.38
15.04
14.37
12.75
12.22
11.46
9.61
9.87
9.22
8.64
8.12
7.68
7.24
6.84
6.41
4.73
4.78
4.69
4.62
4.58
4.55
4.49
4.38
4.32
4.26
4.22
4.24
4.18
4.07
4.05
3.99
2.77
Data Sheet P11618EJ4V0DS00 11
NE34018
S-PARAMETERS
MAG. AND ANG.
VDS = 3.0 V, ID = 10 mA
Frequency S11 S21 S12 S22
MHz MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
(deg.) (deg.) (deg.) (deg.)
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.982
0.973
0.965
0.953
0.944
0.934
0.913
0.909
0.894
0.882
0.866
0.853
0.837
0.823
0.808
0.747
−17.5
−20.9
−24.0
−27.2
−30.3
−33.0
−36.3
−38.6
−41.3
−43.7
−46.2
−48.5
−50.6
−52.8
−54.7
−62.5
7.163
7.082
7.001
6.905
6.849
6.738
6.624
6.514
6.415
6.323
6.219
6.123
6.004
5.897
5.800
5.514
162.7
159.4
156.2
153.1
150.2
147.3
144.1
141.6
138.7
136.2
133.6
131.0
128.8
126.4
124.1
118.6
0.019
0.022
0.025
0.028
0.032
0.035
0.037
0.040
0.043
0.046
0.048
0.050
0.052
0.055
0.057
0.058
82.5
79.5
76.7
75.6
74.8
73.4
72.4
70.8
71.0
69.7
67.6
67.0
67.2
66.5
65.4
61.2
0.736
0.732
0.729
0.725
0.720
0.717
0.713
0.708
0.706
0.702
0.700
0.697
0.692
0.689
0.685
0.593
−10.5
−12.4
−14.4
−16.2
−17.8
−19.5
−21.2
−22.5
−24.0
−25.2
−26.5
−27.9
−29.0
−29.9
−31.0
−28.2
AMPLIFIER PARAMETERS
VDS = 3.0 V, ID = 10 mA
Frequency GUmax GAmax S212S122K Delay Mason’s U G1 G2
MHzdBdBdBdB nsdBdBdB
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
35.08
33.03
31.88
30.40
29.55
28.64
27.29
26.89
26.11
25.51
24.82
24.28
23.64
23.12
22.61
20.25
17.10
17.00
16.90
16.78
16.71
16.57
16.42
16.28
16.14
16.02
15.87
15.74
15.57
15.41
15.27
14.83
−34.56
−33.28
−32.21
−30.97
−29.89
−29.23
−28.63
−27.89
−27.29
−26.83
−26.32
−25.98
−25.60
−25.23
−24.82
−24.80
0.09
0.13
0.16
0.18
0.19
0.21
0.24
0.26
0.27
0.29
0.32
0.34
0.35
0.37
0.39
0.61
0.093
0.093
0.088
0.086
0.081
0.082
0.088
0.070
0.080
0.068
0.074
0.072
0.062
0.066
0.064
0.152 28.504
14.59
12.69
11.69
10.38
9.66
8.93
7.79
7.59
6.97
6.53
6.02
5.65
5.25
4.91
4.59
3.55
3.38
3.34
3.29
3.24
3.18
3.14
3.08
3.02
3.00
2.95
2.92
2.89
2.83
2.80
2.75
1.88
Data Sheet P11618EJ4V0DS00
12
NE34018
S-PARAMETERS
MAG. AND ANG.
VDS = 3.0 V, ID = 30 mA
Frequency S11 S21 S12 S22
MHz MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
(deg.) (deg.) (deg.) (deg.)
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.974
0.961
0.947
0.931
0.915
0.894
0.875
0.863
0.843
0.825
0.806
0.788
0.768
0.747
0.726
0.646
−20.9
−24.8
−28.5
−32.2
−35.5
−39.0
−41.9
−44.7
−47.5
−50.1
−52.5
−55.2
−57.1
−59.2
−61.2
−66.6
10.260
10.103
9.901
9.688
9.505
9.260
9.057
8.850
8.618
8.399
8.182
7.980
7.770
7.550
7.356
6.989
159.9
156.1
152.5
149.1
145.6
142.3
139.2
136.2
133.3
130.4
127.9
125.2
122.6
120.2
118.1
113.2
0.016
0.018
0.022
0.025
0.028
0.030
0.032
0.035
0.036
0.039
0.042
0.044
0.046
0.048
0.050
0.050
82.5
80.4
79.9
78.7
76.8
76.4
76.3
74.8
73.8
73.5
72.1
72.6
71.8
72.5
71.2
67.4
0.625
0.620
0.618
0.614
0.614
0.608
0.607
0.605
0.599
0.595
0.594
0.593
0.590
0.588
0.586
0.521
−9.7
−11.5
−13.3
−14.8
−16.2
−17.7
−18.9
−19.8
−20.9
−21.9
−22.8
−23.6
−24.4
−24.9
−25.5
−23.5
AMPLIFIER PARAMETERS
VDS = 3.0 V, ID = 30 mA
Frequency GUmax GAmax S212S122K Delay Mason’s U G1 G2
MHzdBdBdBdB nsdBdBdB
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
35.31
33.31
31.84
30.56
29.50
28.32
27.43
26.85
26.02
25.34
24.70
24.14
23.53
22.94
22.41
20.61
20.22
20.09
19.91
19.72
19.56
19.33
19.14
18.94
18.71
18.48
18.26
18.04
17.81
17.56
17.33
16.89
−36.03
−34.85
−33.23
−32.13
−31.12
−30.59
−29.81
−29.05
−28.76
−28.20
−27.62
−27.03
−26.74
−26.38
−26.03
−25.99
0.15
0.19
0.21
0.25
0.28
0.32
0.34
0.37
0.40
0.43
0.46
0.47
0.51
0.53
0.56
0.78
0.103
0.103
0.100
0.097
0.095
0.093
0.086
0.085
0.079
0.081
0.070
0.073
0.071
0.068
0.059
0.135 29.365
12.94
11.12
9.83
8.77
7.88
6.98
6.29
5.93
5.38
4.96
4.55
4.21
3.87
3.54
3.25
2.35
2.15
2.11
2.09
2.06
2.05
2.01
2.00
1.98
1.93
1.90
1.89
1.88
1.86
1.84
1.82
1.37
Data Sheet P11618EJ4V0DS00 13
NE34018
NOISE PARAMETERS
VDS = 2.0 V, ID = 5 mA
Frequency NFmin. GaΓopt Rn/50
(GHz) (dB) (dB) MAG. ANG. (deg.)
0.9 0.51 21.2 0.69 15 0.26
1.0 0.52 20.8 0.68 17 0.25
1.5 0.57 18.2 0.63 25 0.24
2.0 0.61 16.2 0.61 35 0.23
2.5 0.62 14.4 0.56 46 0.21
3.0 0.65 13.3 0.44 59 0.17
VDS = 2.0 V, ID = 10 mA
Frequency NFmin. GaΓopt Rn/50
(GHz) (dB) (dB) MAG. ANG. (deg.)
0.9 0.43 22.0 0.62 13 0.20
1.0 0.44 21.6 0.61 14 0.20
1.5 0.49 19.0 0.58 23 0.19
2.0 0.52 16.5 0.57 34 0.18
2.5 0.54 14.9 0.52 45 0.17
3.0 0.57 13.8 0.36 57 0.13
VCE = 3.0 V, IC = 10 mA
Frequency NFmin. GaΓopt Rn/50
(GHz) (dB) (dB) MAG. ANG. (deg.)
0.9 0.43 22.2 0.61 11 0.21
1.0 0.44 21.8 0.60 13 0.20
1.5 0.49 19.2 0.57 22 0.20
2.0 0.52 16.7 0.57 33 0.19
2.5 0.54 15.1 0.52 45 0.18
3.0 0.57 14.0 0.37 58 0.14
Data Sheet P11618EJ4V0DS00
14
NE34018
PACKAGE DIMENSIONS
4-PIN SUPER MINIMOLD (UNIT: mm)
PIN CONNECTIONS
1. Source
2. Gate
3. Source
4. Drain
0.9±0.1
0.15
+0.1
–0.05
0.3
0 to 0.1
3
(1.3)
2.0±0.2
(1.25)
0.650.60
4
21
2.1±0.2
1.25±0.1
0.4
+0.1
–0.05
0.3
+0.1
–0.05
0.3
+0.1
–0.05
0.3
+0.1
–0.05
V63
Data Sheet P11618EJ4V0DS00 15
NE34018
PRECAUTION
(1) Because this device is a HJ-FET with a Schottky barrier gate structure, it is necessary that sufficient care be
taken regarding static electricity and strong electric fields.
Take measures against static electricity and make sure the body is earthed when mounting the device.
(2) Follow the procedure below when operating the device by a gate-and-drain-independent dual power supply.
•Directly ground both the source pins.
•Fix VGS to approximately −2 V.
•Increase VDS to a predetermined voltage level (within the recommended operating range of VDS).
•Adjust VGS in line with a predetermined ID.
(3) It is recommended that the bias application circuit be able to have a fixed voltage and current.
(4) Adjust the I/O matching circuit after turning the bias OFF.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your NEC sales representative.
Soldering Method Soldering Condit i ons Recommended Condition Sy m bol
Infrared Refl ow Package peak temperat ure: 230 °C or below,
Time: 30 s econds or les s (at 210 °C or higher),
Count: 3 ti m es or less , Exposure limit: None Note
IR30-00-3
VPS Package peak temperat ure: 215 °C or below,
Time: 40 s econds or les s (at 200 °C or higher),
Count: 3 ti m es or less , Exposure limit: None Note
VP15-00-3
Wave Solderi ng Soldering bath temperature: 260 °C or bel ow,
Time: 10 seconds or less,
Count: 1 ti m e, Exposure limit: None Note
WS60-00-1
Partial Heating Pin tem perat ure: 230 °C or below,
Time: 10 seconds or less,
Exposure l i mit: None Note
−
Note After opening the dry pack, store it at 25 °C or less and 65 % RH or less for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For the details the recommended soldering conditions, refer to the document SEMICONDUCTOR DEVICE
MOUNTING TECHNOLOGY MANUAL (C10535E).
NE34018
CAUTION
The great care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
M8E 00. 4
The information in this document is current as of September, 2000. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
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