NPN SILICON POWER DARLINGTON TRANSISTORS
General-purpose EpiBase power darl ington transistors, suitable
for linear and switching applications.
Replacement for 2N3055 and Driver
High Gain Darlington Performance
Built-In Diode Protection for Reverse Polarity Protection
Can Be Driven from Low-Level Logic
Popular Voltage Range
Operating Range –-65 to t200°C
2H6576
2H6577
2N6578
I
I
Total Power Dissipation @Tc =25°C —120— Watts
Derate above 25°C A0.685 —Wloc
Operating and Storage Junction,+~~!{i‘3*<:,*!>TJ ,T~tg ~-65 to t200 ~
~., Oc ‘
Temperature Range ,.,
‘~:p.!,,y,
THERMAL CHARAC,@~lS*~CS 4
Character& l&~.s$s”
~T\:>U... Symbol Max Unit
Thermal flesistang~+~~~$ion to Case R~JC 1.46 Oclw
Maximum Lea@T~~&ature for Soldering TL 265 ‘c
Purposq#N4 j$~’ }rom Case for 10s.
,
I
DAR LINGTON SCHEMATIC
Collector
d!
~----- 1
Base ‘4’
it
=150’ ~
Lz4 k__ J
Emitter
LFA’~l*c
&
~_; !
SEATING Y
PLANE
STYLEi:
PIN1. BASE
B
F
2. EMITTER J
CASE:COLLECTOR
Q
H
T‘~~>
MILLIMETERSIINCHES
DIM MIN IMAX IMIN MAX
I I
CASE 11-03
TO-3
I
Epi Base is aTrademerk of Motorole Inc. ~MOTOROLAINC.,197a u> 6JD3
(Replaces AD I327)
,...,,,,
.-- ----
*ELECTRICAL characteristics (TC =25°c unless otherwise noted.)
ICharacteristic symbol Min IMax IUnit
OFF CHARACTERISTICS I
Collector-Emitter Sustaining Voltage(l) VCEO($”s)
([c= 200mAdc, IB =0) Vdc
2N6576 60 1
I I 2N6577
A., fi---
v-
Collector Cutoff Current
(VCER =Rated VCEO(Sus) Value, RBE =10,kQ, TC =150°C)
I,Lcu I
I
Collector Cutoff Current ICEV —
VCEX =Rated VCEO(Sus) V’alue, VgE(off) =1.5 Vdc) “.” ~~,,,t~~..~~ r,, ,-u-
,,<,,+
,.~l,. ... .:>
Collector Cutoff Current >.,+..
ICBO
(VCB =Rated Value)
—~:~,>;$<$,>~ mAdc
‘\:?i=-
“’i~$~j,,
~.~’~
ON CHARACTERISTICS %*,.,,,
..
.@ie>;,
DC Current Gain hFE ., ~,s;ti~.,.
\~~i<~,,.,.,..
,.,
{Ic =15 Adc, VCE =4.0 Vdc) —
1@’!”z’ ‘% ~’ –
(!C =10 Adc, VCE =3.0 Vdc) ,$%S;>,” 5,000
(1C =4.0 Adc, VCE =3.0 Vdcl 20,000
(IC =0.4 Adc, VCE =3.0 Vdc) ..3$$’ ‘%ti 2–
Collector-Emitter Saturation Voltage ,.i<r .,$
‘C E(sa~~y~$ ~<
+,..!,:!:$.
(IC =15 Adc, IB= 0.15 Adc) Vdc
*::,. .\*>\._
([c= 10 Adc, IB=O.l Adc) 4.0
‘::*,,,,>,::$
,,.:.~~}
~.,.’,-.J —2.8
Base-Emitter Saturation Voltage \,.t. ,$$.
~,:sv;g~wt)
(It= 15 Adc, lg=0.15Adc) Vdc
~.~:>~<h,,
(IC= 10 Adc, IB=O.I Adc) —4.5
~.i.i,
{,~$,,;~
,Y ‘i{, k:. —3.5
Collector-Emitter Diode Voltage Drop \$$\w :
>::..,tJ.,.\,,\\?, VF, —
(i EC=15Adc) 4.5 Vdc
“.’jJ,, ‘
.+~f&&T<~Q,
.,..,,
DYNAMIC CHARACTERISTICS ‘i~,
.\ ‘
Magnitude of Commo,n-Emitter Small-Signal Short-Circuit Curre~# Tra#sfer Ratio Ihfel 10 200
(IC =3.0 Adc, VCE =3.0 Vdc; f,= 1.0 MHz) .S:’Q{+C), —
SWITCHING CHARACTERISTICS .:$” ‘“
~:?>;.\.~?.>,&:*:i?t+
RESISTIVE LOAD (Figure 2) ,a,l, s,
,.,,
***,,*t:.
, , .;,? .,
Delay Time (Vcc =30 Vdc, IC =’10 Ad$;$~~8.1 Adc, td —0.15 ~
Rise Time #s
tp =300 PS, Dutv CVCl$a*3~@~+ tr —1.0
Storage Time (Vcc =30 Vdc, IC ‘i~~~~’YIBl =IB2= 0.1 Adc, Ps
t~
Fall Time
—2.0 Ps
tp =300 ps, DuK$~v’c~&+@ 2.0%)
$i ,i~ tf —7.0 ps
..,&$~&:#::’
*Indicates JEDEC Registered Data $’
(1) Pulse test: Pulse Width <30,Q,4/$~&&& Cvcle <2.0%.
.:?. ~:\t;\:
,,\\ ,
-%?.,;$
,>? l\:)~?
,:.,/ ,.,
FIGURE 1 – ~’~fij@ORWARD BIASED
SA,~@;&’%ATING AREA
I%1.o~-”- B~ndingwirsLimit JUwll !-
There are two limitations on the power handling abilitv of
atransistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC-VCE limits of the transis-
tor that must be’observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of Figure 1is based on Tc =25°C; TJ(pk) is variable
depending on power level. Second breakdown pulse Iimits are
valid for duty cycles to 10%.
TJ(pk) may be calculated from the data in Figure 7. At high
case temperatures thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
,.
‘L VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
~MOTOROLA Semiconductor Products /nc.
FIGURE 2– DC CURRENT GAIN FIGURE”3 –COLLECTOR-SATURATION REGION
5UU--JUQL-1
\
200 1IIII I I I II I I I I [ I IIII \l
0.2 0.5 T,0 .2.0 5:0 “lo 15
Ic, COLLECTORCURRENT(AMPS)
FIGURE 4 – COLLECTOR SATURATION VOLTAGE
1@Jc(t)=r(t)eJc
oJc =1.46 m
~‘i”’ I I I I DcuRvESAPPLYFORPOWER ti
U.UL ---- .. ---,-. ,,.L
‘0.01 ,1 1 I111 1
I11111! II I ti iii I I I I I I I I I
0.01 III I Ill
0.1 I
0,2 [ I IIIIIll]
0,3 0,5 0.7 1,0 2.0 3,0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1000
t, TIME (msl
mMOTOROLA SemiconductorProductsInc.
-,:,:, , ,, .,, ,’.. .,
.,, ., ,’
:
●a● ●
,,
FIGURE 7- WITCHING TIMES TEST CIRCUIT
-9.0 v
tr, tf<l Ons 51
Dutv Cycle’= 1.0%
RB and Rc Varied to, Obtain Desired Current Levels
D1 Must be Fast Recovery ”Type, eg:
FIGURE 9- COLLECTOR cuT-OFF REGlON
,105 ,“,,
1[I I x!/ fII 1
.t
Ic, COLLECTOR CURRENT (AMPS)
@MOTOROLA Semiconductor Products Inc.
135-F78/3.5Printed in Switzerland
