MCR100-6 SemiWell Semiconductor Sensitive Gate Silicon Controlled Rectifiers Symbol 2. Gate Features 3. Anode 1. Cathode Repetitive Peak Off-State Voltage : 400V R.M.S On-State Current ( IT(RMS)= 0.8 A ) Low On-State Voltage (1.2V(Typ.)@ ITM) TO-92 General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. Absolute Maximum Ratings Symbol 1 23 ( TJ = 25C unless otherwise specified ) Parameter Condition Ratings Units 400 V VDRM Repetitive Peak Off-State Voltage IT(AV) Average On-State Current Half Sine Wave : TC = 74 C 0.5 A IT(RMS) R.M.S On-State Current All Conduction Angle 0.8 A ITSM Surge On-State Current 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive 10 A I2t for Fusing t = 8.3ms 0.415 A2 s 2 W 0.1 W I2 t PGM PG(AV) Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation IFGM Forward Peak Gate Current 1 A VRGM Reverse Peak Gate Voltage 5.0 V Operating Junction Temperature - 40 ~ 125 C Storage Temperature - 40 ~ 150 C TJ TSTG 1/5 Oct, 2002. Rev. 2 Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved. MCR100-6 Electrical Characteristics Symbol ( TC = 25 C unless otherwise noted ) Items Ratings Conditions Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current VAK = VDRM or VRRM ; RGK = 1000 TC = 25 C TC = 125 C 10 200 VTM Peak On-State Voltage (1) ( ITM = 1 A, Peak ) 1.2 1.7 V IGT Gate Trigger Current (2) TC = 25 C TC = - 40 C 200 500 VGT Gate Trigger Voltage (2) TC = 25 C TC = - 40 C 0.8 1.2 V VGD Non-Trigger Gate Voltage (1) TC = 125 C 0.2 V dv/dt Critical Rate of Rise Off-State Voltage 500 800 V/ 50 A/ 2 5.0 10 mA VAK = 6 V, RL=100 VD = 7 V, RL=100 di/dt IH Critical Rate of Rise On-State Current Holding Current VAK = 12 V, RL=100 VD = Rated VDRM , Exponential wave- form , RGK = 1000 TJ = 125 C IPK = 20A ; PW = 10 ; diG/dt = 1A/ Igt = 20mA VAK = 12 V, Gate Open Initiating Curent = 20mA TC = 25 C TC = - 40 C Rth(j-c) Thermal Impedance Junction to case 60 C/W Rth(j-a) Thermal Impedance Junction to Ambient 150 C/W Notes : 1. Pulse Width 1.0 ms , Duty cycle 1% 2. Does not include RGK in measurement. 2/5 MCR100-6 Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature Max. Allowable Case Temperature [ C] 160 1 o 10 PGM(2W) PG(AV)(0.1W) IGM(1A) Gate Voltage [V] VGM(5V) 0 10 o 25 C VGD(0.2V) -1 10 -1 0 10 1 10 2 10 3 10 140 120 o 80 60 360 20 0 0.0 10 2 40 4 10 = 180 100 : Conduction Angl e 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Average On-State Current [A] Gate Current [mA] Fig 3. Typical Forward Voltage Fig 4. Thermal Response Transient Thermal Impedance [ C/W] 1000 1 On-State Current [A] o 10 o 125 C 0 10 o 25 C 100 R (J-C) 10 -1 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 -2 10 4.0 -1 0 10 3 10 10 o 0 50 100 o Junction Temperature[ C] 150 o IGT(t C) 1 IGT(25 C) VGT(toC) 10 Fig 6. Typical Gate Trigger Current vs. Junction Temperature 10 VGT(25oC) 2 10 Time (sec) Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature 0.1 -50 1 10 On-State Voltage [V] 1 0.1 -50 0 50 100 150 o Junction Temperature[ C] 3/5 MCR100-6 Fig 7. Typical Holding Current Fig 8. Power Dissipation o 0.8 Max. Average Power Dissipation [W] o IH(t C) IH(25 C) 10 1 0.1 -50 0 50 100 o Junction Temperature[ C] 4/5 150 = 120 0.7 = 90 0.6 = 30 o = 60 o = 180 o o 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 Average On-State Current [A] 0.5 o MCR100-6 TO-92 Package Dimension Dim. mm Min. Inch Typ. A Max. Min. 4.2 Typ. Max. 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E F 0.4 4.43 4.83 G 0.016 0.174 0.190 0.45 0.017 H 2.54 0.100 I 2.54 0.100 J 0.33 0.48 A 0.013 0.019 E B F C G 1 D 2 3 H I 1. Cathode 2. Gate 3. Anode J 5/5