Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1169, 2SK1170
Silicon N Channel MOS FET REJ03G0916-0200
(Previous : AD E-208- 1 254)
Rev.2.00
Sep 07, 2005
Application
High speed power swit ching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1. Gate
2. Drain
(Flange)
3. Source
D
G
S
123
2SK1169, 2SK1170
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
2SK1169 450 Drain to source voltage 2SK1170 VDSS 500 V
Gate to source voltage VGSS ±30 V
Drain current ID 20 A
Drain peak current ID(pulse)*1 80 A
Body to drain diode reverse drain current IDR 20 A
Channel dissipation Pch*2 120 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
2SK1169 450 Drain to source
breakdown voltage 2SK1170 V(BR)DSS 500 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
2SK1169 VDS = 360 V, VGS = 0 Zero gate voltage drain
current 2SK1170 IDSS — — 250 µA VDS = 400 V, VGS = 0
Gate to source cutoff volta ge VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
2SK1169 — 0.20 0.25 Static drain to source on
state resistance 2SK1170 RDS(on) — 0.22 0.27 Ω I
D = 10 A, VGS = 10 V *3
Forward transfer admittance |yfs| 10 16 — S ID = 10 A, VDS = 10 V *3
Input capacitan ce Ciss — 2800 — pF
Output capacitance Coss — 780 — pF
Reverse transfer capacitance Crss — 90 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 32 — ns
Rise time tr — 115 — ns
Turn-off delay time td(off) — 200 — ns
Fall time tf — 90 — ns
ID = 10 A, VGS = 10 V,
RL = 3 Ω
Body to drain diode forward voltage VDF — 1.0 — V IF = 20 A, VGS = 0
Body to drain diode reverse recovery
time trr — 500 — ns IF = 20 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
2SK1169, 2SK1170
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Power vs. Temperature Derating
150
100
50
0
Channel Dissipation Pch (W)
50 100 150
Case Temperature TC (°C)
Maximum Safe Operation Area
100
30
10
3
0.1
1 3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Drain Current ID (A)
1.0
0.3 2SK1170
2SK1169
Operation in this area
is limited by R
DS (on)
1 ms
10 µs
100 µs
Ta = 25°C
PW = 10 ms (1Shot)
DC Operation (T
C
= 25
°
C)
Typical Output Characteristics
50
30
20
10
010 20 30 50
Drain to Source Voltage VDS (V)
Drain Current ID (A)
6 V
40
40
V
GS
= 4 V
Pulse Test
5 V
10 V 7 V
Typical Transfer Characteristics
20
16
8
4
0246810
Gate to Source Voltage VGS (V)
Drain Current ID (A)
12
T
C
= 25°C
75°C–25°C
V
DS
= 20 V
Pulse Test
10
8
4
2
04 8 12 16 20
6
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
VDS (on) (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
10 A
I
D
= 5 A
20 A
5
2
1.0
0.5
0.05
1 2 5 20 50 100
Drain Current ID (A)
0.1
0.2
Pulse Test
10
V
GS
= 10 V
15 V
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Drain Current
2SK1169, 2SK1170
Rev.2.00 Sep 07, 2005 page 4 of 6
1.0
0.8
0.6
0.4
0.2
0
0 40 80 120 160
Case Temperature T
C
(°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
V
GS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
10 A
I
D
= 20 A
5 A
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
0.5
0.2 0.5 1.0 5 10 20
Drain Current I
D
(A)
1.0
2
2
75°C
Forward Transfer Admittance yfs (S)
T
C
= 25°C
V
DS
= 20 V
Pulse Test
–25°C
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
5,000
2,000
500
200
100
50
1,000
0.5 1.0 2 5 10 20 50
Typical Capacitance
vs. Drain to Source Voltage
100
01020304050
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Coss
Ciss
Crss
10
V
GS
= 0
f = 1 MHz
1,000
10,000
Dynamic Input Characteristics
500
400
300
200
100
040 80 120 160 200
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
20
16
12
8
4
0
Gate to Source Voltage V
GS
(V)
V
DD
= 100 V
V
DD
= 400 V
250 V
250 V
V
DS
I
D
= 20 A
400 V
V
GS
100 V
Switching Characteristics
500
100
50
20
10
5
200
Switching Time t (ns)
0.5 1.0 2 5 10 20 50
Drain Current I
D
(A)
V
GS
= 10 V V
DD
= 30 V
PW = 2 µs, duty < 1%
t
d (off)
t
r
t
f
t
d (on)
•
•
2SK1169, 2SK1170
Rev.2.00 Sep 07, 2005 page 5 of 6
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
8
4
00.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Pulse Test
5 V, 10 V
V
GS
= 0, –10 V
3
1.0
0.1
0.03
0.01
0.3
10 µ100 µ1 m 10 m 100 m 1 10
Pulse Width PW (S)
θch–c (t) = γ
S
(t) • θch–c
θch–c = 1.04°C/W,T
C
= 25°C
P
DM
PW
T
D = T
PW
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ
S
(t)
T
C
= 25°C
0.01
0.05
0.02
0.2
0.1
0.5
1 Shot Pulse
D = 1
Vin Monitor
Vout Monitor
R
L
50 Ω
Vin = 10 V
D.U.T
.
V
DD
= 30 V
.
Switching Time Test Circuit
Vin 10 %
90 %
90 %
90 %
10 %
td (on) td (off)
trtf
Vout 10 %
Waveforms
2SK1169, 2SK1170
Rev.2.00 Sep 07, 2005 page 6 of 6
Package Dimensions
φ
3.2 ± 0.2
4.8 ± 0.2
1.5
0.3
2.8
0.6 ± 0.2
1.0 ± 0.2
18.0 ± 0.5 19.9 ± 0.2
15.6 ± 0.3
0.5
1.0
5.0 ± 0.3
1.6
1.4 Max 2.0
2.0
14.9 ± 0.2
3.6 0.9
1.0
5.45 ± 0.55.45 ± 0.5
Package Name
PRSS0004ZE-A TO-3P / TO-3PV
MASS[Typ.]
5.0gSC-65
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK1169-E 360 pcs Box (Tube)
2SK1170-E 360 pcs Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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