July 2007 Rev 2 1/9
9
BD241A
BD241C
NPN power transistors
Features
■NPN transistors
Applications
■Audio, general purpose switching and amplifier
transistors
Description
The devices are manufactured in Planar
technology with “Base Island” layout. The
resulting transistor shows exceptional high gain
performance coupled with very low saturation
voltage. The PNP types are BD242A and
BD242C.
.
Figure 1. Internal schematic diagram
123
TO-220
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Table 1. Device summary
Order codes Marking Package Packaging
BD241A
BD241C
BD241A
BD241C
TO-220
TO-220
Tube
Tube
Absolute maximum ratings BD241A BD241C
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1 Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
BD241A BD241C
VCER Collector-emitter voltage (RBE = 100Ω) 70 115 V
VCEO Collector-emitter voltage (IB = 0) 60 100 V
VEBO Emitter-base voltage (IC = 0) 5 V
ICCollector current 3 A
ICM Collector peak current (tp < ms) 5 A
IBBase current 1 A
PTOT Total dissipation at Tcase = 25°C 40 W
Tstg Storage temperature -65 to 150 °C
TJMax. operating junction temperature 150 °C
BD241A BD241C Electrical characteristics
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2 Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
2.1 Electrical characteristic (curves)
Table 3. Electrical characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE = 0) VCE = rated VCEO 0.2 mA
ICEO
Collector cut-off current
(IB = 0)
for BD241A VCE =30V
for BD241C VCE =60V
0.3
0.3
mA
mA
IEBO
Emitter cut-off current
(IC = 0) VEB =5V 1mA
VCEO(sus)(1)
1. Pulsed duration = 300 ms, duty cycle ≥1.5%.
Collector-emitter
sustaining voltage
(IB = 0)
IC =30mA
for BD241A
for BD241C
60
100
V
V
VCE(sat)(1) Collector-emitter
saturation voltage IC =3A _ IB =0.6A 1.2 V
VBE(1) Base-emitter voltage IC =3A VCE =4V 1.8 V
hFE(1) DC current gain IC =1A VCE =4V
IC =3A VCE =4V
25
10
Figure 2. Safe operating area Figure 3. Derating curve
Electrical characteristics BD241A BD241C
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Figure 4. DC current gain Figure 5. DC current gain
Figure 6. Collector-emitter saturation
voltage
Figure 7. Base-emitter saturation
voltage
Figure 8. Base-emitter on voltage
Figure 9. Resistive load switching time
BD241A BD241C Electrical characteristics
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2.2 Test circuits
Figure 11. Resistive load switching test circuit
Figure 10. Resistive load switching time
1) Fast electronic switch
2) Non-inductive resistor
Package mechanical data BD241A BD241C
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3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
BD241A BD241C Package mechanical data
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DIM.
mm.
MIN. TYP MAX.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.49 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
TO-220 Mechanical data
Revision history BD241A BD241C
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4 Revision history
Table 4. Revision history
Date Revision Changes
01-Dec-2000 1 Initial Release
10-Jul-2007 2 Figure 2 and figure 3, have been added.
BD241A BD241C
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