TSOP52..
Document Number 82154
Rev. 1.2, 05-Jul-05
Vishay Semiconductors
www.vishay.com
1
16797
1
2
3
4
Not for New Design
IR Receiver Module for PCM Remote Control Systems
Description
The TSOP52.. - series are miniaturized SMD-IR
Receiver Modules for infrared remote control sys-
tems. PIN diode and preamplifier are assembled on
lead frame, the epoxy package is designed as IR fil-
ter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP52.. is the stan-
dard IR remote control SMD-Receiver series, sup-
porting all major transmission codes.
Features
Photo detector and preamplifier in one
package
Internal filter for PCM frequency
Continuous data transmission possible
TTL and CMOS compatibility
Output active low
Low power consumption
High immunity against ambient light
Suitable burst length 10 cycles/burst
Taping available for topview and sideview assem-
bly
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Parts Table
Absolute Maximum Ratings
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Part Carrier Frequency
TSOP5230 30 kHz
TSOP5233 33 kHz
TSOP5236 36 kHz
TSOP5237 36.7 kHz
TSOP5238 38 kHz
TSOP5240 40 kHz
TSOP5256 56 kHz
Parameter Test condition Symbol Value Unit
Supply Voltage Pin 4 VS-0.3...6.0 V
Supply Current Pin 4 IS5mA
Output Voltage Pin 3 VO-0.3...6.0 V
Output Current Pin 3 IO15 mA
Junction Temperature Tj100 °C
Storage Temperature Range Tstg -40...+85 °C
Operating Temperature Range Tamb -25...+85 °C
Power Consumption Tamb 85°C Ptot 50 mW
e3
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Document Number 82154
Rev. 1.2, 05-Jul-05
TSOP52..
Vishay Semiconductors
Not for New Design
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Typ. Max Unit
Supply Current VS = 5 V, Ev = 0 ISD 0.8 1.1 1.5 mA
VS = 5 V, Ev = 40 klx, sunlight ISH 1.4 mA
Supply Voltage VS4.5 5.5 V
Transmission Distance Ev = 0, test signal see fig.7, IR
diode TSAL6200, IF = 400 mA
d30m
Parameter Test condition Symbol Min Typ. Max Unit
Output Voltage Low (Pin 3) IOSL = 0.5 mA,Ee = 0.7 mW/m2VOSL 250 mV
Minimum Irradiance
(30 - 40 kHz)
Pulse width tolerance: tpi - 5/fo <
tpo < tpi + 6/fo, test signal see
fig.7
Ee min 0.35 0.5 mW/m2
Minimum Irradiance (56 kHz) Pulse width tolerance: tpi - 5/fo <
tpo < tpi + 6/fo, test signal see
fig.7
Ee min 0.4 0.6 mW/m2
Maximum Irradiance tpi - 5/fo < tpo < tpi + 6/foEe max 30 W/m2
Directivity Angle of half transmission
distance
ϕ1/2 ±50 deg
Figure 1. Frequency Dependence of Responsivity
E / E Rel. Responsivity
e min e
0.7 0.8 0.9 1.0 1.1
f/f0 Relative Frequency
1.3
94 8143
0.0
0.2
0.4
0.6
0.8
1.0
1.2
f=f
0±5%
f(3dB)=f
0/10
Figure 2. Sensitivity in Dark Ambient
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.0 10000.0
Ee – Irradiance ( mW/m2 )96 12110
po
t – Output Pulse Length (ms)
Input burst duration
l = 950 nm,
optical test signal, fig.7
TSOP52..
Document Number 82154
Rev. 1.2, 05-Jul-05
Vishay Semiconductors
www.vishay.com
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Not for New Design
Figure 3. Sensitivity in Bright Ambient
Figure 4. Threshold Irradiance vs. Field Strength of Disturbance
Figure 5. Sensitivity vs. Supply Voltage Disturbances
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.01 0.10 1.00 10.00 100.00
E DC Irradiance (W/m
2
)
96 12111
e min
E Threshold Irradiance (mW/m )
2
Correlationwith ambient light sources
(Disturbance effect): 10W/m
2
1.4 klx
(Stand.illum.A, T = 2855 K) 8.2 klx
(Daylight,T=5900K)
Ambient, λ= 950 nm
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.5 1.0 1.5 2.0
E – Field Strength of Disturbance (kV/m)
16802
e min
E – Threshold Irradiance (mW/m )
2
0.01 0.1 1 10 100
0.1
1
10
1000
94 9106
VsRMSAC Voltage on DC Supply Voltage (mV)
E Threshold Irradiance( mW/m )
e min 2
f=f
0
10 kHz
100 Hz
1 kHz
Figure 6. Sensitivity vs. Ambient Temperature
Figure 7. Output Function
Figure 8. Output Function
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
30150 153045607590
T
amb
Ambient Temperature (°C )
96 12112
e min
E Threshold Irradiance(mW/m )
2
Sensitivity in dark ambient
E
e
T
t
pi
*
t
* t
pi
w10/fo is recommended for optimal function
V
O
V
OH
V
OL
t
16110
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
Output Signal
t
d1)
t
po2)
1)
7/f
0
<t
d
<15/f
0
2)
t
pi
–5/f
0
<t
po
< t
pi
+6/f
0
E
e
t
V
O
V
OH
V
OL
t
600 ms 600 ms
T = 60 ms
T
on
T
off
94 8134
Optical Test Signal
Output Signal, ( see Fig.4 )
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Document Number 82154
Rev. 1.2, 05-Jul-05
TSOP52..
Vishay Semiconductors
Not for New Design
Suitable Data Format
The circuit of the TSOP52.. is designed in that way
that unexpected output pulses due to noise or distur-
bance signals are avoided. A bandpass filter, an inte-
grator stage and an automatic gain control are used
to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fullfill the following condition:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 70
cycles a gap time of at least 14 cycles is neccessary.
• For each burst which is longer than 1.8ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should be at least 4 times
longer than the burst.
• Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, R-2000 Code.
When a disturbance signal is applied to the TSOP52..
it can still receive the data signal. However the sensi-
tivity is reduced to that level that no unexpected
pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP52.. are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38kHz or at any other fre-
quency
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 10. Output Pulse Diagram
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
10 20 30 40 50 60 70 80 90
Burstlength [number of cycles/burst]
16156
Envelope Duty Cycle
f=38kHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.0 10000.0
E
e
– Irradiance (mW/m
2
)
96 12114
on off
T ,T – Output Pulse Length (ms)
T
on
l = 950 nm,
optical test signal, fig.8
T
off
750 850 950 1050
0
0.2
0.4
0.6
0.8
1.2
S ( ) – Relative Spectral Sensitivity
rel
l– Wavelength ( nm )
1150
94 8408
1.0
l
Figure 12. Directivity
16801
0.4 0.2 0 0.2 0.4 0.6
0.6
0.9
0°
30°
10°20°
40°
50°
60°
70°
80°
1.0
0.8
0.7
d
rel
-Relative TransmissionDistance
TSOP52..
Document Number 82154
Rev. 1.2, 05-Jul-05
Vishay Semiconductors
www.vishay.com
5
Not for New Design
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation ( see Figure A or Fig-
ure B ).
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
Figure 14. IR Signal from Fluorescent Lamp with high Modulation
0 5 10 15 20
time [ms]
16739
0 5 10 15 20
time [s]
16740
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Document Number 82154
Rev. 1.2, 05-Jul-05
TSOP52..
Vishay Semiconductors
Not for New Design
16584
TSOP52..
Document Number 82154
Rev. 1.2, 05-Jul-05
Vishay Semiconductors
www.vishay.com
7
Not for New Design
16585
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8
Document Number 82154
Rev. 1.2, 05-Jul-05
TSOP52..
Vishay Semiconductors
Not for New Design
Package Dimensions in mm
16776
TSOP52..
Document Number 82154
Rev. 1.2, 05-Jul-05
Vishay Semiconductors
www.vishay.com
9
Not for New Design
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respectively
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substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
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