AMSC N/A FSC 5961
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INCH-POUND
MIL-PRF-19500/291Y
27 March 2019
SUPERSEDING
MIL-PRF-19500/291W
17 May 2016
PERFORMANCE SPECIFICATION SHEET
TRANSISTOR, PNP, SILICON, SWITCHING, DEVICE TYPES 2N2906A AND 2N2907A,
ENCAPSULATED (THROUGH HOLE AND SURFACE MOUNT PACKAGES) AND UNENCAPSULATED,
RADIATION HARDNESS ASSURANCE,
QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four
levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as
specified in MIL-PRF-19500 and two levels of product assurance (JANHC and JANKC) are provided for each
unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided
for quality levels JANTXV, JANS, JANHC, and JANKC.
1.2 Physical dimensions.
1.2.1 Package outlines. The device package outlines for the encapsulated device types are as follows: Three
terminal round metal can TO-206AA (formerly TO-18) in accordance with figure 1, four terminal surface mount device
(SMD) package in accordance with figure 2, and three or four terminal SMD package in accordance with figure 3.
1.2.2 Unencapsulated die. The dimensions and topography for JANHC and JANKC unencapsulated die are as
follows: The B version die (JANHCB and JANKCB) is in accordance with figure 4 and the D version die (JANHCD
and JANKCD) is in accordance with figure 5.
1.3 Maximum ratings. Unless otherwise specified TA = +25°C.
Types IC VCBO VEBO VCEO TJ and TSTG
mA dc V dc V dc V dc °C
All devices
-600
-60
-5
-60
-65 to +200
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 29 July 2019.
MIL-PRF-19500/291Y
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1.3 Maximum ratings. Unless otherwise specified TA = +25°C - Continued.
Types
PT
PT
PT
RθJA
RθJC
RθJSP(IS)
RθJSP(AM)
TC = +25°C
TSP(IS) =
TSP(AM) =
(2) (3)
(2) (3)
(2) (3)
(2) (3)
(1) (2)
+25°C (1) (2)
+25°C (1) (2)
W W W W °C/W °C/W °C/W °C/W
2N2906A, L,
1.0
N/A
N/A
325
150
N/A
N/A
2N2907A, L
1.0
N/A
N/A
325
150
N/A
N/A
2N2906AUA,
N/A
1.0
1.5
(4) 325
N/A
110
40
2N2907AUA
N/A
1.0
1.5
(4) 325
N/A
110
40
2N2906AUB,
and UBN
N/A
1.0
N/A
(4) 325
N/A
90
N/A
2N2907AUB
and UBN
N/A
1.0
N/A
(4) 325
N/A
90
N/A
2N2906AUBC
and UBCN
N/A
1.0
N/A
(4) 325
N/A
90
N/A
2N2907AUBC
and UBCN
N/A
1.0
N/A
(4) 325
N/A
90
N/A
(1) For derating, see figures 6, 7, 8, 9, and 10.
(2) See 3.3 for abbreviations.
(3) For thermal curves, see figures 11, 12, 13, 14, and 15.
(4) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 6 and 11 for
the UA, UB, UBC, UBN, and UBCN package and use RθJA.
1.4 Primary electrical characteristics. Unless otherwise specified TA = +25°C.
hFE at VCE = -10 V dc
Limits
(2) (3)
h
FE1
IC = -0.1 mA dc
h
FE2
IC = -1.0 mA dc
h
FE3
IC = -10 mA dc
h
FE4
(1)
IC = -150 mA dc
h
FE5
(1)
IC = -500 mA dc
(2) (3) (2) (3) (2) (3) (2) (3) (2) (3)
Min
40
75
40
100
40
100
40
100
40
50
Max
175
450
120
300
Limits
(2) (3)
|hfe|
Cobo
Switching (saturated)
f = 100 MHz V
CE
= -20 V dc,
IC = -20 mA dc
100 kHz ≤ f ≤ 1 MHz
VCB = -10 V dc, IE = 0
t
on
See figure 16
t
off
See figure 17
pF ns ns
Min
2.0
Max
8
45
300
Limits
(2) (3)
VCE(sat)1 (1)
VCE(sat)2 (1)
VBE(sat)1 (1)
VBE(sat)2 (1)
I
C
= -150 mA dc
IB = -15 mA dc
I
C
= -500 mA dc
IB = -50 mA dc
I
C
= -150 mA dc
IB = -15 mA dc
I
C
= -500 mA dc
IB = -50 mA dc
V dc V dc V dc V dc
Min
-0.6
Max
-0.4
-1.6
-1.3
-2.6
(1) Pulsed see 4.5.1.
(2) Includes device type 2N2906A and package designators "L", "UA", "UB", "UBC", "UBN", and "UBCN".
(3) Includes device type 2N2907A and package designators "L", "UA", "UB", "UBC", "UBN", and "UBCN".
MIL-PRF-19500/291Y
3
1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-19500 and as specified herein.
See 6.5 for PIN construction example and 6.6 for a list of available PINs.
1.5.1 JAN certification mark and quality level designators.
1.5.1.1 Encapsulated devices. The quality level designators for encapsulated devices that are applicable for this
specification sheet from the lowest to the highest level are as follows: "JAN", "JANTX", "JANTXV", and "JANS".
1.5.1.2 Unencapsulated die. The quality level designators for unencapsulated die that are applicable for this
specification sheet from the lowest to the highest level are as follows: "JANHC" and "JANKC".
1.5.2 RHA designator. The RHA levels that are applicable for this specification sheet from lowest to highest for
quality levels JANS and JANKC are as follows: "M", "D", "P", "L", "R", "F", "G", and "H".
1.5.3 Device type. The designation system for the device types covered by this specification sheet are as follows.
1.5.3.1 First number and first letter symbols. The semiconductors of this specification sheet use the first number
and letter symbols "2N".
1.5.3.2 Second number symbols. The second number symbols for the semiconductors covered by this
specification sheet are as follows: "2906" and "2907".
1.5.4 Suffix symbols. The following suffix letters are incorporated in the PIN for this specification sheet.
1.5.4.1 Modified version designator. All devices use an "A" suffix symbol that indicates an electrical parameter
modified version of the device versus the non-suffix device. Non-A suffix devices are not covered by this
specification.
1.5.4.2 Package designators. The suffix symbols (or lack thereof) that designate the package outline for the
devices covered by this specification sheet are as follows:
Blank A blank designator identifies that the package is a TO-206AA (see figure 1).
UA This designator indicates a 4-terminal SMD package (see figure 2).
UB This designator indicates a 4-terminal metal lid (used as a shield and connected to fourth pad) SMD
package (see figure 3).
UBC This designator indicates a 4-terminal ceramic lid (lid is braze-ring connected to fourth pad) SMD
package (see figure 3).
UBN This designator indicates a 3-terminal isolated metal lid SMD package (see figure 3).
UBCN This designator indicates a 3-terminal isolated ceramic lid SMD package (see figure 3).
1.5.5 Lead finish. The lead finishes applicable to this specification sheet are listed on QML-19500.
1.5.6 Die identifiers for unencapsulated devices. The manufacturer die identifiers that are applicable for this
specification sheet are "B" (see figure 4) and "D" (see figure 5).
MIL-PRF-19500/291Y
4
NOTES:
1. Dimension are in inches. Millimeters are given for general information only.
2. Terminal 1 = emitter, terminal 2 = base, terminal 3 = collector.
3. The collector shall be internally connected to the case.
4. Body contour optional within zone defined by dimensions CD, HD, and Q.
5. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007
inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
The device may be measured by direct methods.
6. Dimension LU applies between dimensions L1 and L2. Dimension LD applies between dimensions L2 and
LL minimum. Diameter is uncontrolled in dimension L1 and beyond dimension LL minimum.
7. All three leads.
8. For "L" suffix devices, dimension LL = 1.5 inches (38.10 mm) minimum and 1.75 inches (44.45 mm)
maximum.
9. Dimension TL measured from maximum HD.
10. Beyond r (radius) maximum, dimension TW shall be held for a minimum length of .011 inch (0.28 mm).
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions for TO-206AA package (similar to TO-18).
Symbol Dimensions Notes
Inches Millimeters
Min Max Min Max
CD .178 .195 4.52 4.95 4
CH .170 .210 4.32 5.33
HD .209 .230 5.31 5.84 4
LC .100 TP 2.54 TP 5
LD .016 .021 0.41 0.53 6, 7
LL .500 .750 12.70 19.05 6, 7, 8
LU .016 .019 0.41 0.48 6, 7
L1 .050 1.27 6, 7
L2 .250 6.35 6, 7
P .100 2.54
Q .030 0.76 4
TL .028 .048 0.71 1.22 9
TW .036 .046 0.91 1.17 10
r .010 0.25 11
α 45° TP 45° TP 5
r
HD
1
2
3
TW
C
L
TL
LC
α
LD
CH
LL
LU
CD
P
Q
SEATING
PLANE
L1
L2
MIL-PRF-19500/291Y
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Dimensions
Note
Symbol
Inches
Millimeters
Min
Max
Min
Max
BL
.215
.225
5.46
5.71
BL2
.225
5.71
BW
.145
.155
3.68
3.93
BW2
.155
3.93
CH
.061
.075
1.55
1.90
3
L3
.003
0.08
5
LH
.029
.042
0.74
1.07
LL1
.032
.048
0.81
1.22
LL2
.072
.088
1.83
2.23
LS
.045
.055
1.14
1.39
LW
.022
.028
0.56
0.71
LW2
.006
.022
0.15
0.56
5
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Terminal 1 = collector, terminal 2 = emitter, terminal 3 = base, terminal 4 = not connected.
3. Dimension "CH" controls the overall package thickness. When a window lid is used, dimension "CH" must
increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4. The corner shape (square, notch, radius) may vary at the manufacturer's option, from that shown on the
drawing.
5. Dimensions "LW2" minimum and "L3" minimum and the appropriate castellation length define an
unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was
designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension
"LW2" maximum define the maximum width and depth of the castellation at any point on its surface.
Measurement of these dimensions may be made prior to solder dipping.
6. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not
exceed .006 inch (0.15 mm) for solder dipped leadless chip carriers.
7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions for 4 terminal SMD package (UA).
2
1
3
4
CH
LH
BW2
BL2
BW
BL
PIN 1 IDENTIFIER
LW2
L3
LL1
LW
LS
LL1
LL2
SEE
DETAIL A
DETAIL A
EMITTER
BASE
COLLECTOR
1
2
3
SEATING PLANE
MIL-PRF-19500/291Y
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FIGURE 3. Physical dimensions for 3 and 4 terminal SMD packages (UB, UBN, UBC, and UBCN).
CW
BW
CL
BL
BH
2
1
3
4
r2
r
3 PLS
LID
CERAMIC
ORIENTATION
KEY
r1
LW
3 PLS
LS1
LS2
LL1
3 PLS
DETAIL A
SEE
DETAIL A
LL2
UB, UBC, UBN, AND UBCN
4
UB AND UBC ONLY
2
1
3
LID
CERAMIC
r1
LW
3 PLS
LS1
LS2
LL1
3 PLS
SEE
DETAIL A
4
UBN AND UBCN ONLY
MIL-PRF-19500/291Y
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Dimensions
Symbol Inches Millimeters Note
Min Max Min Max
BL .115 .128 2.92 3.25
BW .085 .108 2.16 2.74
BH .046 .056 1.17 1.42 UB only, 3
BH .046 .056 1.17 1.42 UBN only, 4
BH .055 .069 1.40 1.75 UBC only, 5
BH .055 .069 1.40 1.75 UBCN only, 6
CL .128 3.25
CW .108 2.74
LL1 .022 .038 0.56 0.97 3 PLS
LL2 .014 .035 0.356 0.89 3 PLS
LS1 .035 .040 0.89 1.02
LS2 .071 .079 1.80 2.01
LW .016 .024 0.41 0.61
r .008 0.20 5
r1 .012 0.30 7
r2 .022 0.56 UB and UBC only, 7
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Hatched areas on package denote metallized areas.
3. UB only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the metal lid.
4. UBN only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Isolated lid with three pads only.
5. UBC (ceramic lid) only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to
the lid.
6. UBCN (ceramic lid) only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Isolated lid with 3 pads only.
7. For design reference only.
8. In accordance with ASME Y14.5M, diameters are equivalent to ɸx symbology.
FIGURE 3. Physical dimensions for 3 and 4 terminal SMD packages (UB, UBN, UBC, and UBCN) – Continued.
MIL-PRF-19500/291Y
8
Physical characteristics (B-version):
1. Die size: .023 x .023 inch ±.002 inch (0.584 mm x 0.584 mm ±0.0508 mm).
2. Die thickness: .010 ±.0015 inch (0.254 mm ±0.038 mm).
3. Base pad: B = .0042 x .0042 inch (0.107 mm x 0.107 mm).
4. Emitter pad: E = .0042 x .0042 inch (0.107 mm x 0.107 mm).
5. Collector pad: Backside.
6. Top metal: Aluminum 15,000 Å minimum, 18,000 Å nominal.
7. Backside metal: A. Al/Ti/Ni/Ag 15k Å/5k Å/10k Å/10k Å.
B. Gold 2.5 k Å minimum, 3.0 k Å nominal.
C. Eutectic die mount - No metal.
8. Glassivation: Si3N4, 2k Å minimum, 2.2k Å nominal.
FIGURE 4. JANHC and JANKC (B-version) die dimensions.
E
B
MIL-PRF-19500/291Y
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Physical characteristics (D-version):
1. Die size: .020 x .020 inch square (0.508 mm x 0.508 mm).
2. Die thickness: .008 ±.0016 inch (0.203 mm ±0.041 mm).
3. Base pad: B = .004 x .004 inch (0.101 mm x 0.101 mm).
4. Emitter pad: E = .004 x .004 inch (0.101 mm x 0.101 mm).
5. Collector: Back side.
6. Top metal: Aluminum, 20,000 ±2,000 Å.
7. Backside metal: Gold, 6,500 ±1,950 Å.
8. Glassivation: SiO2, 7,500 ±1,500 Å.
FIGURE 5. JANHC and JANKC (D-version) die dimensions.
B
E
MIL-PRF-19500/291Y
10
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 – Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 – Test Methods For Semiconductor Devices.
(Copies of these documents are available online at https://quicksearch.dla.mil.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
PCB Printed circuit board
RθJA Thermal resistance junction to ambient.
RθJC Thermal resistance junction to case.
RθJSP(AM) Thermal resistance junction to solder pads (adhesive mount to PCB).
RθJSP(IS) Thermal resistance junction to solder pads (infinite sink mount to PCB).
TSP(AM) Temperature of solder pads (adhesive mount to PCB).
TSP(IS) Temperature of solder pads (infinite sink mount to PCB).
UA Surface mount case outlines (see figure 2).
UB, UBC Surface mount case outlines (see figure 3).
UBN, UBCN Surface mount case outlines (see figure 3).
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figures 1, 2, 3, 4, and 5 herein. Epoxy die attach may be used when a moisture monitor plan
has been submitted and approved by the qualifying activity.
MIL-PRF-19500/291Y
11
3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750 and herein. Where
a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Pin-out. The pin-out of the encapsulated devices shall be as shown on figures 1, 2, and 3 as applicable.
3.5 Marking.
3.5.1 All packaged device types except those having "UB" in the suffix. Marking shall be in accordance with
MIL-PRF-19500.
3.5.2 Marking of device types with "UB" in the suffix (see 1.5.4.2). Marking on the UB, UBC, UBN, and UBCN
packages shall consist of an abbreviated PIN, the date code, and the manufacturer’s symbol or logo. The prefixes
JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The "2N" prefix and the
"AUB" and "AUBC" suffix can also be omitted. The RHA designator (see 1.5.2) shall immediately precede (or
replace) the device "2N" identifier (depending upon degree of abbreviation required).
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.
3.8 RHA. RHA requirements and test levels shall be as defined in MIL-PRF-19500.
3.9 Workmanship. Transistors shall be processed in such a manner as to be uniform in quality and shall be free
from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I, II, and III).
d. Element evaluation (see 4.6).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified
herein.
4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.2.3 Radiation hardened devices. See 4.4.4 and MIL-PRF-19500.
MIL-PRF-19500/291Y
12
4.3 Screening of encapsulated devices (quality levels JANTX, JANTXV, and JANS only). Screening shall be in
accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made
in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen Measurement
JANS level JANTXV and JANTX level
1b Required Required (JANTXV only)
2 Optional Optional
3a Required Required
3b Not applicable Not applicable
(1) 3c Required (see 4.3.2) Required (see 4.3.2)
4 Required Optional
5 Required Not required
6 Not applicable Not applicable
8 Required Not required
9 ICBO2, hFE4, read and record Not applicable
10 24 hours minimum 24 hours minimum
11
ICBO2; hFE4;
ΔICBO2 = 100 percent of initial value or
5 nA dc, whichever is greater.
ΔhFE4 = ±15 percent
ICBO2, hFE4
12 See 4.3.1 See 4.3.1
(2) 13
Subgroups 2 and 3 of table I herein;
ΔICBO2 = 100 percent of initial value or 5
nA dc, whichever is greater;
ΔhFE4 = ±15 percent
Subgroup 2 of table I herein;
ΔICBO2 = 100 percent of initial value or
5 nA dc, whichever is greater;
ΔhFE4 = ±15 percent
15 Required Not required
16 Required Not required
(1) Shall be performed anytime after temperature cycling, screen 3a; TX and TXV do not need to be repeated in
screening requirements.
(2) Thermal impedance (ZθJX) is not required in screen 13.
4.3.1 Power burn-in conditions. Power burn-in conditions shall be as follows: VCB = -10 to -30 V dc. Power shall
be applied to achieve TJ = +135°C minimum using a minimum PD = 75 percent of PT maximum, TA ambient rated as
defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias
conditions, TJ, and mounting conditions) for JANTX and JANTXV quality levels may be used. A justification
demonstrating equivalence is required. In addition, the manufacturing site’s burn-in data and performance history will
be essential criteria for burn-in modification approval.
MIL-PRF-19500/291Y
13
4.3.2 Thermal impedance measurements. The thermal impedance measurements shall be performed in
accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and tMD
(and VC where appropriate). The thermal impedance limit used in screen 3c of 4.3 herein and subgroup 2 of table I
shall comply with the thermal impedance graphs in figures 11, 12, 13, 14, and 15 (less than or equal to the curve
value at the same tH time) and shall be less than the process determined statistical maximum limit as outlined in
method 3131. See table III, subgroup 4 herein.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened
devices shall be submitted to and pass the requirements of subgroups 1 and 2, of table I herein, inspection only
(table E-VIB, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in
accordance with 4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with 4.4.2.1 for quality level JANS
and 4.4.2.2 for quality levels JAN, JANTX, and JANTXV.
4.4.2.1 Quality level JANS. Group B inspection for quality level JANS shall be conducted in accordance with the
conditions specified for subgroup testing in table E–VIA of MIL-PRF-19500 and herein. Delta measurements shall be
in accordance with 4.7 herein.
Subgroup Method Condition
B4 1037 VCB = -10 to -30 V dc. Adjust device current, or power, to achieve a minimum ΔTJ of
100°C.
B5 1027 VCB = -10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3).
(NOTE: If a failure occurs, resubmission shall be at the test conditions of the original
sample.)
Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500,
table E-VIA, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjusted TA or PD to achieve a
TJ = +225°C minimum.
B6 3131 RθJA, RθJC only (see 1.3).
MIL-PRF-19500/291Y
14
4.4.2.2 Quality levels JAN, JANTX, and JANTXV. Group B inspection for quality levels JAN, JANTX, and
JANTXV shall be conducted in accordance with the conditions specified in table E–VIC (small die flow) of
MIL-PRF-19500 and herein. Delta measurements shall be taken after each step and shall be in accordance with 4.7
herein. All catastrophic failures during CI shall be analyzed to the extent possible to identify root cause and
corrective action. Whenever a failure is identified as wafer lot or wafer processing related, the entire wafer lot and
related devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective action to
eliminate the failure mode has been implemented and the devices from the wafer lot are screened to eliminate the
failure mode.
Step Method Condition
1 1026 Steady-state life: 1,000 hours minimum, VCB = -10 dc, power and ambient shall be applied to
achieve TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated PT as
defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time
decreased so long as the devices are stressed for a total of 45,000 device hours minimum,
and the actual time of test is at least 340 hours.
2 1048 Blocking life, TA = +150°C, VCB = 80 percent of rated voltage, 48 hours minimum.
n = 45 devices, c = 0.
3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
4.4.2.2.1 Sample selection. Samples selected for small die flow group B inspection shall be in accordance with all
of the following requirements:
a. Samples shall be selected from an inspection lot that has been submitted to and passed table I, subgroup 2,
conformance inspection.
b. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life
test (step 1) may be tested prior to the application of final lead finish.
c. Separate samples may be used for each step.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 for quality level JANS and 4.4.3.2 for quality levels
JAN, JANTX, and JANTXV. Delta measurements shall be in accordance with table I, subgroup 2 and 4.7 herein.
4.4.3.1 Quality level JANS.
Subgroup Method Condition
C2 2036 Test condition E, (not applicable for UA, UB, UBC, UBN, and UBCN devices).
C6 1026 1,000 hours, VCB = -10 V dc, power and ambient temperature shall be applied to
the device to achieve TJ = +150°C minimum, and minimum power dissipation of
75 percent of max rated PT (see 1.3 herein); n = 45, c = 0. The sample size may
be increased and the test time decreased as long as the devices are stressed for
a total of 45,000 device hours minimum, and the actual time of test is at least 340
hours.
MIL-PRF-19500/291Y
15
4.4.3.2 Quality levels JAN, JANTX, and JANTXV.
Subgroup Method Condition
C2 2036 Test condition E, (not applicable for UA, UB, UBC, UBN, and UBCN devices).
C5 3131 RθJA RθJC only (see 1.3).
C6 Not applicable.
4.4.3.3 Sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot
containing the intended package type and lead finish procured to the same specification which is submitted to and
passes table I tests herein for conformance inspection. When the final lead finish is solder or any plating prone to
oxidation at high temperature, the samples for C6 life test may be tested prior to the application of final lead finish.
Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as
complying with the requirements for that subgroup.
4.4.4 Group D inspection. Conformance inspection for radiation hardness assured JANS and JANTXV types shall
include the group D tests specified in table II herein. These tests shall be performed as required in accordance with
MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for
neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other
subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to
the fluence profile.
4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Delta measurements shall be in
accordance with the applicable steps of 4.7.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except
the output capacitor shall be omitted.
4.5.3 Displacement damage characterization. For RHA devices, each supplier shall perform a displacement
damage characterization. The characterization shall demonstrate exposure versus data and does not indicate pass
or fail criteria. The exposure shall be conducted in accordance with method 1017 of MIL-STD-750. The following
details shall apply:
a. Samples may be taken from any wafer of the qualification lot.
b. As a minimum, testing shall be at 2E+12 n/cm2 plus two additional neutron fluence levels chosen by the
supplier.
c. If the device degrades less than 5 percent of the specification at the highest neutron fluence level, a single
data point may be sufficient.
Alternate package options may be substituted for characterization. The displacement damage characterization
data shall be made available from the supplier.
4.6 Element evaluation of unencapsulated die. The element evaluation of unencapsulated die shall be in
accordance with appendix G of MIL-PRF-19500. For subgroup 4, the burn-in duration for the JANKC level shall
follow the JANS requirements and the JANHC shall follow the JANTX requirements.
MIL-PRF-19500/291Y
16
4.7 Delta measurements. Delta measurements shall be as specified below:
Step Inspection MIL-STD-750 Symbol Limit
Method Conditions
1
Collector-base cutoff
current
3036
Bias condition D,
VCB = -50 V dc
ΔICB02
(1)
100 percent of initial value
or 10 nA dc, whichever is
greater.
2
Forward current
transfer ratio
3076
V
CE
= -10 V dc;
IC = -150 mA dc;
pulsed see 4.5.1
Δh
FE4
(1)
±25 percent change from
initial reading.
(1) Devices which exceed the table I limits for this test shall not be accepted.
TABLE I. Group A inspection.
Inspection 1/ MIL-STD-750 Symbol Limit Unit
Method Conditions Min Max
Subgroup 1 2/
Visual and mechanical
inspection 3/
2071
Solderability 3/ 4/
2026
n = 15 leads, c = 0
Resistance to solvents
3/ 4/ 5/
1022
n = 15 devices, c = 0
Salt atmosphere 6/
1041
n = 6 devices, c = 0
Temperature cycling 3/ 4/
(air to air)
1051
Test condition C, 25 cycles
n = 22 devices, c = 0
Hermetic seal 4/
Fine leak
Gross leak
1071
n = 22 devices, c = 0
Electrical measurements 4/
Table I, subgroup 2
Bond strength 3/ 4/
2037
Precondition
TA = +250°C at t = 24 hours or
TA = +300°C at t = 2 hours
n = 11 wires, c = 0
Decap internal visual
(design verification) 4/
2075
n = 4 devices, c = 0
See footnotes at end of table.
MIL-PRF-19500/291Y
17
TABLE I. Group A inspection - Continued.
Inspection 1/ MIL-STD-750 Symbol Limit Unit
Method Conditions Min Max
Subgroup 2
Thermal impedance 7/
3131
See 4.3.2
Z
θJX
°C/W
Collector to base cutoff
current
3036
Bias condition D; V
CB
= -60 V dc
I
CBO1
-10
µA dc
Cutoff current, emitter to
base
3061
Bias condition D; V
EB
= -5 V dc
I
EBO1
-10
µA dc
Breakdown voltage, collector
to emitter
3011
Bias condition D; I
C
= -10 mA dc;
pulsed (see 4.5.1)
V
(BR)CEO
-60
V dc
Collector to emitter cutoff
current
3041
Bias condition C; V
CE
= -50 V dc
I
CES
-50
nA dc
Collector to base cutoff
current
3036
Bias condition D; V
CB
= -50 V dc
I
CBO2
-10
nA dc
Emitter to base cutoff current
3061
Bias condition D; V
EB
= -4 V dc
I
EBO2
-50
nA dc
Forward-current transfer ratio
3076
VCE = -10 V dc; IC = -0.1 mA dc
hFE1
2N2906A 8/
40
2N2907A 8/
75
Forward-current transfer ratio
3076
VCE = -10 V dc; IC = -1.0 mA dc
hFE2
2N2906A 8/
40
175
2N2907A 8/
100
450
Forward-current transfer ratio
3076
VCE = -10 V dc; IC = -10 mA dc
hFE3
2N2906A 8/
40
2N2907A 8/
100
Forward-current transfer ratio
3076
V
CE
= -10 V dc; I
C
= -150 mA dc;
pulsed (see 4.5.1)
h
FE4
2N2906A 8/
40
120
2N2907A 8/
100
300
See footnotes at end of table.
MIL-PRF-19500/291Y
18
TABLE I. Group A inspection - Continued.
Inspection 1/ MIL-STD-750 Symbol Limit Unit
Method Conditions Min Max
Subgroup 2 - continued.
Forward-current transfer
ratio
3076
V
CE
= -10 V dc; I
C
= -500 mA dc;
pulsed (see 4.5.1)
h
FE5
2N2906A 8/
40
2N2907A 8/
50
Collector-emitter saturation
voltage
3071
I
C
= -150 mA dc; I
B
= -15 mA dc,
pulsed (see 4.5.1)
V
CE(sat)1
-0.4
V dc
Collector-emitter saturation
voltage
3071
I
C
= -500 mA dc; I
B
= -50 mA dc;
pulsed (see 4.5.1)
V
CE(sat)2
-1.6
V dc
Base-emitter saturation
voltage
3066
Test condition A; I
C
= -150 mA dc;
IB = -15 mA dc; pulsed (see 4.5.1)
V
BE(sat)1
-0.6
-1.3
V dc
Base-emitter saturation
voltage
3066
Test condition A; I
C
= -500 mA dc;
IB = -50 mA dc; pulsed (see 4.5.1)
V
BE(sat)2
-2.6
V dc
Subgroup 3
High temperature operation
T
A
= +150°C
Collector to base cutoff
current
3036
Bias condition D; V
CB
= -50 V dc
I
CBO3
-10
µA dc
Low temperature operation
T
A
= -55°C
Forward-current transfer
ratio
3076
V
CE
= -10 V dc; I
C
= -10 mA dc
h
FE6
2N2906A 8/
20
2N2907A 8/
50
Subgroup 4
Small-signal short-circuit
forward current transfer
ratio
3206
V
CE
= -10 V dc; I
C
= -1 mA dc;
f = 1 kHz
h
fe
2N2906A 8/
40
2N2907A 8/
100
See footnotes at end of table.
MIL-PRF-19500/291Y
19
TABLE I. Group A inspection - Continued.
Inspection 1/ MIL-STD-750 Symbol Limit Unit
Method Conditions Min Max
Subgroup 4 - continued.
Forward-current transfer
ratio
3076
V
CE
= -10 V dc; I
C
= -500 mA dc;
pulsed (see 4.5.1)
h
FE5
Magnitude of small-
signal short- circuit
forward current transfer
ratio
3306
V
CE
= -20 V dc; I
C
= -20 mA dc;
f = 100 MHz
|h
fe
|
2.0
Open circuit output
capacitance
3236
V
CB
= -10 V dc; I
E
= 0;
100 kHz ≤ f ≤ 1 MHz
C
obo
8
pF
Input capacitance (output
open- circuited)
3240
V
EB
= -2.0 V dc; I
C
= 0;
100 kHz ≤ f ≤ 1 MHz; see 4.5.2.
C
ibo
30
pF
Saturated turn-on time
(See figure 16)
t
on
45
ns
Saturated turn-off time
(See figure 17)
t
off
300
ns
Subgroups 5, 6, and 7
Not applicable
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed test subgroup of table I, double the sample size of the failed test or sequence of
tests. A failure in table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be
rerun upon submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
6/ Required only for laser marked devices. Not required for non-corrosion prone base metals.
7/ For end-point measurements, this test is required for the following subgroups:
Group B, subgroup 3, 4, and 5 (JANS).
Group B, step 1 (TX and TXV).
Group C, subgroup 2 and 6.
8/ Includes device types with package designators "L", "UA", "UB", "UBC", "UBN", and "UBCN".
MIL-PRF-19500/291Y
20
TABLE II. Group D inspection.
Inspection 1/ 2/ 3/ MIL-STD-750 Symbol Limit Unit
Method Conditions Min Max
Subgroup 1 4/
Neutron irradiation
1017
Neutron exposure V
CES
= 0 V
Collector to base cutoff current
3036
Bias condition D; VCB = -60 V dc ICBO1
-20
µA dc
Cutoff current, emitter to base
3061
Bias condition D; VEB = -5 V dc IEBO1
-20
µA dc
Breakdown voltage, collector to
emitter
3011
Bias condition D; IC = -10 mA dc;
pulsed (see 4.5.1)
V(BR)CEO
-60
V dc
Collector to emitter cutoff current
3041
Bias condition C; VCE = -50 V dc ICES
-100
nA dc
Collector to base cutoff current
3036
Bias condition D; VCB = -50 V dc ICBO2
-20
nA dc
Emitter to base cutoff current
3061
Bias condition D; VEB = -4 V dc IEBO2
-100
nA dc
Forward-current transfer ratio
3076
VCE = -10 V dc; IC = -0.1 mA dc
[hFE1] 5/
M through H2N2906A
[20]
M through H2N2907A
[37.5]
Forward-current transfer ratio
3076
VCE = -10 V dc; IC = -1.0 mA dc
[hFE2] 5/
M through H2N2906A
[20]
175
M through H2N2907A
[50]
450
Forward-current transfer ratio
3076
VCE = -10 V dc; IC = -10 mA dc
[hFE3] 5/
M through H2N2906A
[20]
M through H2N2907A
[50]
Forward-current transfer ratio
3076
VCE = -10 V dc; IC = -150 mA dc
[hFE4] 5/
M through H2N2906A
[20]
120
M through H2N2907A
[50]
300
Forward-current transfer ratio
3076
VCE = -10 V dc; IC = -500 mA dc
[hFE5] 5/
M through H2N2906A
[20]
M through H2N2907A
[25]
Collector-emitter saturation
voltage
3071
I
C
= -150 mA dc; I
B
= -15 mA dc
V
CE(sat)1
-.46
V dc
Collector-emitter saturation
voltage
3071
I
C
= -500 mA dc; I
B
= -50 mA dc
V
CE(sat)2
-1.84
V dc
Base-emitter saturation voltage
3066
Test condition A; IC = -150 mA dc;
IB = -15 mA dc; pulsed (see 4.5.1)
VBE(sat)1
-0.6
-1.5
V dc
Base-emitter saturation voltage
3066
Test condition A; IC = -500 mA dc;
IB = -50 mA dc; pulsed (see 4.5.1)
VBE(sat)2
-3.0
See footnotes at end of table.
MIL-PRF-19500/291Y
21
TABLE II. Group D inspection - Continued.
Inspection 1/ 2/ 3/ MIL-STD-750 Symbol Limit Unit
Method Conditions Min Max
Subgroup 2
Total dose irradiation
1019
Gamma exposure V
CES
= -48 V
Collector to base cutoff current
3036
Bias condition D; VCB = -60 V dc ICBO1
-20
µA dc
Cutoff current, emitter to base
3061
Bias condition D; VEB = -5 V dc IEBO1
-20
µA dc
Breakdown voltage, collector to
emitter
3011
Bias condition D; IC = -10 mA dc;
pulsed (see 4.5.1)
V(BR)CEO
-60
V dc
Collector to emitter cutoff current
3041
Bias condition C; VCE = -50 V dc ICES
-100
nA dc
Collector to base cutoff current
3036
Bias condition D; VCB = -50 V dc ICBO2
-20
nA dc
Emitter to base cutoff current
3061
Bias condition D; VEB = -4 V dc IEBO2
-100
nA dc
Forward-current transfer ratio
3076
VCE = -10 V dc; IC = -0.1 mA dc
[hFE1] 5/
M through H2N2906A
[20]
M through H2N2907A
[37.5]
Forward-current transfer ratio
3076
VCE = -10 V dc; IC = -1.0 mA dc
[hFE2] 5/
M through H2N2906A
[20]
175
M through H2N2907A
[50]
400
Forward-current transfer ratio
3076
VCE = -10 V dc; IC = -10 mA dc
[hFE3] 5/
M through H2N2906A
[20]
M through H2N2907A
[50]
Forward-current transfer ratio
3076
VCE = -10 V dc; IC = -150 mA dc
[hFE4] 5/
M through H2N2906A
[20]
120
M through H2N2907A
[50]
300
Forward-current transfer ratio
3076
VCE = -10 V dc; IC = -500 mA dc
[hFE5] 5/
M through H2N2906A
[20]
M through H2N2907A
[25]
Collector-emitter saturation
voltage
3071
I
C
= -150 mA dc; I
B
= -15 mA dc;
V
CE(sat)1
-.46
V dc
Collector-emitter saturation
voltage
3071
I
C
= -500 mA dc; I
B
= -50 mA dc;
V
CE(sat)2
-1.84
V dc
Base-emitter saturation voltage
3066
Test condition A; IC = -150 mA dc;
IB = -15 mA dc; pulsed (see 4.5.1)
V
BE(sat)1
-0.6
-1.5
V dc
Base-emitter saturation voltage
3066
Test condition A; IC = -500 mA dc;
IB = -50 mA dc; pulsed (see 4.5.1)
V
BE(sat)2
-3.0
V dc
1/ Tests to be performed on all devices receiving radiation exposure.
2/ For sampling plan, see MIL-PRF-19500.
3/ Electrical characteristics apply to the corresponding L, UA, UB, UBC, UBN, and UBCN suffix versions unless otherwise
noted.
4/ See 6.2.f herein.
5/ See method 1019, of MIL-STD-750, for how to determine [hFE] by first calculating the delta (1/hFE) from the pre-and
post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never
exceed the pre-radiation minimum hFE that it is based upon.
MIL-PRF-19500/291Y
22
TABLE III. Group E inspection (all quality levels) - for qualification only.
Inspection MIL-STD-750 Sample plan
Method Conditions
Subgroup 1
45 devices
c = 0
Temperature cycling
(air to air)
1051
Test condition C, 500 cycles.
Hermetic seal
1071
Fine leak
Gross leak
Electrical measurements
See table I, subgroup 2 and 4.7 herein.
Subgroup 2
45 devices
c = 0
Intermittent life
1037
V
CB
= -10 V dc, 6,000 cycles. Adjust device
current, or power, to achieve a minimum ΔTJ of
100°C.
Electrical measurements
See table I, subgroup 2 and 4.7 herein.
Subgroup 4
15 devices
c = 0
Thermal resistance
3131
R
θJSP(IS)
may be calculated but shall be
measured once in the same package with a
similar die size to confirm calculations (may
apply to multiple slash sheets).
RθJSP(AM) need be calculated only.
Thermal impedance curves
See MIL-PRF-19500, table E-IX, subgroup 4.
Sample size
N/A
Subgroup 5
Not applicable
Subgroup 6
ESD
1020
Subgroup 8
45 devices
c = 0
Reverse stability
1033
Condition B.
Subgroup 12
Neutron irradiation
1017
See 4.5.3.
MIL-PRF-19500/291Y
23
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the
desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See
1.3 herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is
performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to
limit TJ in their application.
FIGURE 6. Temperature-power derating for TO-206AA package (RθJA) leads .125 inch (3.18 mm) PCB.
TEMPERATURE-POWER DERATING CURVE
TA =+25°C; DEVICE TYPES 2N2906A, 2N2906AL, 2N2907A, AND 2N2907AL
MIL-PRF-19500/291Y
24
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating
at ≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the
desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See
1.3 herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is
performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to
limit TJ in their application.
FIGURE 7. Temperature-power derating for TO-206AA package (RθJC), base case mount.
TEMPERATURE-POWER DERATING CURVE
TC =+25°C; DEVICE TYPES 2N2906A, 2N2906AL, 2N2907A, AND 2N2907AL
MIL-PRF-19500/291Y
25
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating
at ≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the
desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See
1.3 herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is
performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to
limit TJ in their application.
FIGURE 8. Temperature-power derating for UA package (RθJSP(IS)), infinite sink 4-points.
TEMPERATURE-POWER DERATING CURVE
TSP(IS) =+25°C; DEVICE TYPES 2N2906AUA AND 2N2907AUA
MIL-PRF-19500/291Y
26
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating
at ≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the
desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See
1.3 herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is
performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to
limit TJ in their application.
FIGURE 9. Temperature-power derating for UA package (RθJSP(AM)) 4-point solder pad (adhesive mount to PCB).
TEMPERATURE-POWER DERATING CURVE
TSP(AM) = 25°C; DEVICE TYPES 2N2906AUA AND 2N2907AUA
MIL-PRF-19500/291Y
27
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the
desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See
1.3 herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is
performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to
limit TJ in their application.
FIGURE 10. Temperature-power derating for UB, UBC, UBN, or UBCN packages (RθJSP(IS)) infinite sink 3-point.
TEMPERATURE-POWER DERATING CURVE
TSP(IS) = +25°C; DEVICE TYPES 2N2906AUB, UBC, UBN, AND UBCN,
2N2907AUB, UBC, UBN, AND UBCN
MIL-PRF-19500/291Y
28
FIGURE 11. Thermal impedance graph (RθJA) for devices in a TO-206AA package.
0.000001
10
100
2
3
5
2
3
5
4
6
7
8
9
4
6
7
8
9
1000
1
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
TIME (s
)
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
0.00001
0.0001
0.001
0.01
0.1
1
10
100
MAXIMUM THERMAL IMPEDANCE
DEVICE TYPES 2N2906A, 2N2906AL, 2N2907A, AND 2N2907AL;
TO-18 PACKAGE WITH .125" LEAD MOUNT TO PCB
THETA (°C/W)
MIL-PRF-19500/291Y
29
FIGURE 12. Thermal impedance graph (RθJC) for devices in a TO-206AA package.
0.000001
10
100
2
3
5
2
3
5
4
6
7
8
9
4
6
7
8
9
1000
1
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
TIME (s)
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
0.00001
0.0001
0.001
0.01
0.1
1
10
100
MAXIMUM THERMAL IMPEDANCE
DEVICE TYPES 2N2906A, 2N2906AL, 2N2907A, AND 2N2907AL;
TO-18 PACKAGE WITH CASE BASE IN COPPER SINK
THETA (°C/W)
MIL-PRF-19500/291Y
30
FIGURE 13. Thermal impedance graph (RθJSP(IS)) for devices in a UA package.
0.000001
10
100
2
3
5
2
3
5
4
6
7
8
9
4
6
7
8
9
1000
1
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
TIME (s)
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
0.00001
0.0001
0.001
0.01
0.1
1
10
MAXIMUM THERMAL IMPEDANCE
DEVICE TYPES 2N2906AUA AND 2N2907AUA;
UA PACKAGE 4 POINTS SOLDER PADS (INFINITE SINK MOUNT TO PCB)
THETA (°C/W)
MIL-PRF-19500/291Y
31
FIGURE 14. Thermal impedance graph (RθJSP(AM)) for devices in a UA package.
0.000001
10
100
2
3
5
2
3
5
4
6
7
8
9
4
6
7
8
9
1
2
3
5
4
6
7
8
9
TIME (s)
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
0.00001
0.0001
0.001
0.01
0.1
1
MAXIMUM THERMAL IMPEDANCE
DEVICE TYPES 2N2906AUA AND 2N2907AUA;
UA 4 POINTS SOLDER PADS (ADHESIVE MOUNT TO PCB)
THETA (°C/W)
MIL-PRF-19500/291Y
32
FIGURE 15. Thermal impedance graph (RθJSP(IS)) for devices in a UB, UBC, UBN, and UBCN package).
0.000001
10
100
2
3
5
2
3
5
4
6
7
8
9
4
6
7
8
9
1000
1
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
TIME (s)
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
2
3
5
4
6
7
8
9
0.00001
0
.
0001
0.001
0.01
0.1
1
10
MAXIMUM THERMAL IMPEDANCE
DEVICE TYPES 2N2906AUB, 2N2906AUBC, 2N2907AUB AND 2N2907AUBC
UB AND UBC WITH 3 POINTS SOLDER PADS (INFINITE SINK MOUNT) TO PCB
THETA (°C/W)
MIL-PRF-19500/291Y
33
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the generator
source impedance shall be 50 ohms.
2. Sampling oscilloscope: Zin ≥ 100 K ohms, Cin ≤ 12 pF, rise time ≤ 5 ns.
FIGURE 16. Saturated turn-on switching time test circuit.
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the generator
source impedance shall be 50 ohms.
2. Sampling oscilloscope: Zin ≥ 100 K ohms, Cin ≤ 12 pF, rise time ≤ 5 ns.
3. Alternate test point for high impedance attenuating probe.
FIGURE 17. Saturated turn-off switching time test circuit.
PULSE
IN
50 Ω
200 Ω
VCC = –30 V dc
50%
OUTPUT
WAVEFORM
INPUT
WAVEFORM
SEE NOTE 1
-16 V
0 V
tON
90%
50%
10%
OUTPUT
SAMPLING
OSCILLOSCOPE
SEE NOTE 2
SCOPE
1 kΩ
PULSE WIDTH
200 ±10 ns
90%
50%
OUTPUT
WAVEFORM
INPUT
WAVEFORM
SEE NOTE 1
–16.3 V
+13.7 V
PULSE
IN
20 kΩ
1N916
OR
EQUIV
50 Ω
toff
10%
+3 V dc
VCC = –30 V dc
200 Ω
1 kΩ
OUTPUT SAMPLING
OSCILLOSCOPE
SEE NOTE 3
SCOPE
tf ≤ 5 ns
10%
OUTPUT SAMPLING
OSCILLOSCOPE
SEE NOTE 2
10 µs ≤ PW ≤ 100 µs
MIL-PRF-19500/291Y
34
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel
need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are
maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or
within the Military Service’s system commands. Packaging data retrieval is available from the managing Military
Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
d. The complete PIN, see 1.5 and 6.4.
e. For acquisition of RHA designed devices, table II, subgroup 1 testing of group D is optional. If table II,
subgroup 1 testing is desired, it must be specified in the contract.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
DLA Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An
online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at
https://qpldocs.dla.mil.
6.4 PIN construction examples. The PINs for encapsulated and unencapsulated devices and are constructed
using the following forms.
6.4.1 Non-RHA encapsulated devices The PINs for encapsulated devices are constructed using the following
form.
JANTXV 2N 2906 A
JAN certification mark and quality level (see 1.5.1.1)
First number and first letter symbols (see 1.5.3.1)
Second number symbols (see 1.5.3.2)
Suffix symbols for modified device, package designator
and metallurgical bond (see 1.5.4)
MIL-PRF-19500/291Y
35
6.4.2 RHA encapsulated devices The PINs for RHA encapsulated devices are constructed using the following
form.
JANS M 2N 2906 AUB
JAN certification mark and quality level (see 1.5.1.1)
RHA designator (see 1.5.2)
First number and first letter symbols (see 1.5.3.1)
Second number symbols (see 1.5.3.2)
Suffix symbol (see 1.5.4)
6.4.3 Unencapsulated devices. The PINs for un-encapsulated devices are constructed using the following form.
JANHC B M 2N 2906A
JAN certification mark and quality level (see 1.5.1.2)
Die identifier for unencapsulated devices (see 1.5.6)
RHA designator (see 1.5.2)
First number and first letter symbols (see 1.5.3.1)
Second number symbols (see 1.5.3.2)
6.5 List of PINs.
6.5.1 PINs for encapsulated devices. The following is a list of possible PINs for encapsulated devices available on
this specification sheet.
PINs for type 2N2906A and 2N2907A (1)
JAN2N2906A
JANTX2N2906A
JANTXV#2N2906A
JANS#2N2906A
JAN2N2906AL
JANTX2N2906AL
JANTXV#2N2906AL
JANS#2N2906AL
JAN2N2907A
JANTX2N2907A
JANTXV#2N2907A
JANS#2N2907A
JAN2N2907AL
JANTX2N2907AL
JANTXV#2N2907AL
JANS#2N2907AL
JAN2N2906AUA
JANTX2N2906AUA
JANTXV#2N2906AUA
JANS#2N2906AUA
JAN2N2907AUA
JANTX2N2907AUA
JANTXV#2N2907AUA
JANS#2N2907AUA
JAN2N2906AUB
JANTX2N2906AUB
JANTXV#2N2906AUB
JANS#2N2906AUB
JAN2N2906AUBC
JANTX2N2906AUBC
JANTXV#2N2906AUBC
JANS#2N2906AUBC
JAN2N2907AUB
JANTX2N2907AUB
JANTXV#2N2907AUB
JANS#2N2907AUB
JAN2N2907AUBC
JANTX2N2907AUBC
JANTXV#2N2907AUBC
JANS#2N2907AUBC
JAN2N2906AUBN
JANTX2N2906AUBN
JANTXV#2N2906AUBN
JANS#2N2906AUBN
JAN2N2906AUBCN
JANTX2N2906AUBCN
JANTXV#2N2906AUBCN
JANS#2N2906AUBCN
JAN2N2907AUBN
JANTX2N2907AUBN
JANTXV#2N2907AUBN
JANS#2N2907AUBN
JAN2N2907AUBCN
JANTX2N2907AUBCN
JANTXV#2N2907AUBCN
JANS#2N2907AUBCN
(1) The number sign (#) represent one of eight RHA designators available (M, D, P, L, R, F, G, or H).
The PIN is also available without a RHA designator.
MIL-PRF-19500/291Y
36
6.5.2 List of PINs for unencapsulated devices. The following is a list of possible PINs available on this
specification sheet.
PINs for type 2N2906A and 2N2907A (1)
JANHCB#2N2906A JANHCD#2N2906A
JANKCB#2N2907A JANKCD#2N2907A
(1) The number sign (#) represent one of eight RHA designators
available (M, D, P, L, R, F, G, or H). The PIN is also available
without a RHA designator.
6.5.3 Suppliers and PINs for JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the
applicable letter version (example JANHCB2N2907A) will be identified on the QML.
Die ordering information (1) (2)
PIN Manufacturer
43611 34156
2N2906A JANHCB2N2906A JANHCD2N2906A
2N2907A JANHCB2N2907A JANHCD2N2907A
(1) For JANKC level, replace JANHC with JANKC.
(2) JANHCA, JANKCA, JANHCC, and JANKCC versions are obsolete.
6.6 Supersession information.
6.6.1 Superseded PINs. The following supersession data applies to PINs associated with this document:
Superseding PIN as
specified within
Superseded PIN as
specified within
Superseding PIN as
specified within
MIL-S-19500/291E,
dated 28 July 1994
MIL-S-19500/291D,
AMENDMENT 3, dated
5 March 1993
MIL-S-19500/314A(USAF),
AMENDMENT 1, dated
3 March 1966
2N2906A 2N2906
2N2907A 2N2907 2N2907A
6.6.2 Commerical PINs. Devices covered by this specification supersede the manufacturers' and users' PIN. The
term PIN is equivalent to the term part number which was previously used in this specification. This information in no
way implies that manufacturers' PIN's are suitable as a substitute for the military PIN.
6.7 Request for new types and configurations. Requests for new device types or configurations for inclusions in
this specification sheet should be submitted to: DLA Land and Maritime, ATTN: VAC, Post Office Box 3990,
Columbus, OH 43218-3990 or by electronic mail at Semiconductor@dla.mil or by facsimile (614) 693–1642 or
DSN 850–6939.
MIL-PRF-19500/291Y
37
6.8 Changes from previous issue. The margins of this specification are marked with vertical bars to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the previous issue.
Custodians: Preparing activity:
Army - CR DLA - CC
Navy - EC
Air Force - 85 (Project 5961-2019-027)
NASA - NA
DLA - CC
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.dla.mil.