2N918CSM
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 7/95
LAB
SEME
GENERAL PURPOSE, SMALL SIGNAL
NPN TRANSIST OR IN A
HERMETICALLY SEALED
CERAMIC SURFA CE MOUNT PA CKA GE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N918 for high reliability
applications requiring small size and low
weight devices.
VCBO Collector – Base Voltage
VCEO Collector – Emitter Voltage
VEBO Emitter – Base Voltage
ICCollector Current
PDTotal Device Dissipation @ TA=25°C
Derate above 25°C
PDTotal Device Dissipation @ TC=25°C
Derate above 25°C
TSTG , TJOperating and Storage Temperature Range
30V
15V
3V
50mA
200mW
1.14mW / °C
300mW
1.71mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC
(LCC1 PACKAGE)
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter PAD 3 – Collector
21
0.51 ± 0.10
(0.02 ± 0.004) 0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012) rad.
rad.
A =
3
2N918CSM
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 7/95
LAB
SEME
Parameter Test Conditions Min. Typ. Max. Unit
IC= 3mA IB= 0
IC= 1µAI
E= 0
IE= 10µAI
C= 0
VCB = 25V IE= 0
IC= 10mA IB= 1mA
IC= 10mA IB= 1mA
IC= 500µAV
CE = 10V
IC= 3mA VCE = 1V
IC= 10mA VCE = 10V
IC= 4mA VCE = 10V
f = 100MHz
IE= 0 VCB = 10V
f = 140kHz VCB = 0
VEB = 0.5V IC= 0
f = 140kHz
IC= 1mA VCE = 6V
RG= 400Ωf = 60MHz
IC= 6mA VCB = 12V
f = 200MHz
IC= 8mA VCB = 15V
f = 500MHz
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
VCEO(sus) Collector – Emitter Sustaining Voltage
V(BR)CBO Collector – Base Breakdown Voltage
V(BR)EBO Emitter – Base Breakdown Voltage
ICBO Collector – Base Cut-off Current
VCE(sat) Collector – Emitter Saturation Voltage
VBE(sat) Base – Emitter Saturation Voltage
hFE DC Current Gain
fTCurrent Gain Bandwidth Product
Cob Output Capacitance
Cib Input Capacitance
NF Noise Figure
Gpe Amplifier Power Gain
POPower Output
ηCollector Efficiency
15
30
30.010
0.4
1.0
10
20 200
20
600
1.7
3.0
2.0
6.0
15
30
25
V
µA
V
—
MHz
pF
pF
dB
mW
%
