TOSHIBA 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2$C1815 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. High Voltage and High Current _ > VCEO=50V (Min.), Ic =150mA (Max.) 4 Excellent hpg Linearity > hpR(g)=100 (Typ.) at VoR=6V, IG =150mA oF : hpg (=0.1mA)/hrg I=2mA)=0.95 (Typ.) pt = Low Noise : NF=1dB(Typ.) at f=1kHz e Complementary to 25A1015(O, Y, GR class) MAXIMUM RATINGS (Ta = 25C) Ley sen CHARACTERISTIC SYMBOL | RATING | UNIT 3 { i. | imt g 3 Collector-Base Voltage VCBO 60 Vv 123 aq Collector-Emitter Voltage VCEO 50 Vv Emitter-Base Voltage VEBO 5 Vv 1. EMITTER 2. COLLECTOR Collector Current Ic 150 mA 3 BASE Base Current ___ Ip 50 mA JEDEC T0-92 Collector Power Dissipation Pc 400 mW EIAJ S043 Junction Temperature Tj 125 Cc TOSHIBA 9-5F1B Storage Temperature Range Tstg 55~125 C Weight : 021g ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN, | TYP. | MAX. | UNIT Collector Cut-off Current IcBo Vcp=60V, Ip=0 _ 0.1 | A Emitter Cut-off Current IEBO VEB=5V, Ic=0 0.1 | vA hFE(1) Vcr=6V, Icp=2mA 70 700 DC Current Gain (Note) CE C hFK(2) | VCE=6V, Ic =150mA 25 100 _ Collector-Emitter Saturation I=1 A, Ip=10mA _ wl 2 Voltage VcCE(sat) | I=100mA, IR=10m 0 0.25 Vv Base-Emitter Saturation Voltage | VBE(sat) | I=100mA, IR=10mA _ 10] V Transition Frequency fp VcE=LOV, Ic=1lmA 80 MHz Collector Ouput Capacitance Cob VcB=10V, Ip=0, f=1MHz | 2.0 3.5 | pF a ; VcE=10V, Ig=1mA Base Intrinsic Resistance rbb f30MHz 50 Q : : VcE=68V, I=0.lmA Noise Figure NF f=1kHz, Rg=10k0 1.0 10 | dB Note : hpp Classification 0: 70~140 Y ; 120~240 GR : 200~400 BL ; 350~700 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-04-10 1/3TOSHIBA 2SC1815 Ic - VCE hFE Ic COMMON EMITTER COMMON EMITTER q 5.0 Ta=25C Vcr=6v & 3.0 ka 1 ---- VcE=1V Do a=) a 2.0 es Z 9 a 10 4 Ta=100C e os 8 = S 05 : a a 4 Ip=0.2mA a Q oO 0 0 1 2 3 4 5 6 7 8 01 03 1 3 10-30 100 300 COLLECTOR-EMITTER VOLTAGE Vck (V) COLLECTOR CURRENT Ic (mA) VCE(sat) Ic VBE(sat) Ic COMMON EMITTER Ig/Ip=10 Ta=25C COMMON EMITTER Ic/Ip=10 0.5 0.3 COLLECTOR-EMITTER SATURATION VOLTAGE Vck(sat) (V) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 0.1 0.05 0.03 0.01 . 01 08 1 3 10 30 100. 300 01 0.3 1 3 10 30 100 = 300 COLLECTOR CURRENT Ig (mA) COLLECTOR CURRENT Ic (mA) Ip - VBE fr I 3000 1000 COMMON EMITTER COMMON EMITTER Vop=10V VoE=6V 1000 Ta=25C 300 500 300 100 30 Ta=100C 10 100 50 30 BASE CURRENT Ip (A) TRANSITION FREQUENCY fr (MHz) 0.3 10 0 0.4 0.8 1.2 1.6 2.0 0.1 0.3 1 3 10 30 100 =. 300 BASE-EMITTER VOLTAGE VgE (V) EMITTER CURRENT Ic (mA) 961001 EAA2 @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-04-10 2/3TOSHIBA 2SC1815 h PARAMATER Ic h PARAMATER VCE COMMON EMITTER Von=12V Ta=25C f=270Hz COMMON EMITTER Ig=2mA Ta=25C f=270Hz BL GR BL hfe Y oO fea} a a B = & & = 5 a s a Z a x= bre X 10-4 0.3 1 3 10 30 1 3 10 30 100 300 COLLECTOR CURRENT Iq (mA) COLLECTOR-EMITTER VOLTAGE VoR (V) Pc Ta COLLECTOR POWER DISSIPATION Pc (mW) 0 25 50 15 100 125 AMBIENT TEMPERATURE Ta (C) 1997-04-10 3/3