TO-92MOD Plastic-Encapsulate Transistors qm @. % 2SC2482 TRANSISTOR(NPN) # ior FEATURES TO-392MOD Pom: 0.9W (Tamb=25C) 1.EMITTER 2.COLLECTOR 3.BASE Vierycpo: 300 V 3a Junction temperature range = fae \) == ee} Wes Ta, Tstg: -55C to + 150C ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) Collector-base breakdown voltage V(BR)CBO Ic= 100 u A, le=0 300 Vv Collector-emitter breakdown voltage | V(BR)CEO ic= 3 mA, !s=0 300 Vv Emitter-base breakdown voltage V(BR)EBO fe= 100 u A, ic=0 7 Vv Collector cut-off current IcBo Ves= 240 V, le=0 1 vA Collector cut-off current IcEo Vce= 220 V, is=0 5 vA Emitter cut-off. current leBo Ves= 7 V, Ic=0 1 LA DC current gain hre Vce= 10 V, Ic= 20 MA 30 150 Collector-emitter saturation voltage VcEsat Ic= 10 mA, f= 1 mA 4 Vv Base-emitter saturation voltage . VBEsat Ic= 10 mA, Ie= 1 mA 1 Vv Vece= 10 V, c= 20 mA Transition frequency fr 50 MHz f =30MHz CLASSIFICATION OF hre Rank Oo Y Range / 30-90 90-150Typical Characteristics ic-Vce 120 COMMON EMITTER Ta = 26C 3 COLLECTOR CURRENT Ic (ma) 20 0 4 8 12 16 20 24 COLLECTOR EMITTER VOLTAGE Vce (V) hre- Ic COMMON EMITTER Vce=10V Ta = 100C DC CURRENT GAIN hre 38 1 3 10 30 100 COLLECTOR CURRENT IC (mA) Vcsat-lc COMMON EMITTER Ic /Igp=5 COLLECTOR EMITTER SATURATION = 05 2 w 0.3 > Ww Ta = 100C 0.1 = 5 25 25 S 0.05 0.3 1 3 10 30 100 COLLECTOR CURRENT | C (mA) fr- Ic COMMON EMITTER Ta =25C VcE=20V 1 3 10 30 100 COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hre COLLECTOR EMITTER SATURATION VOLTAGE Vcesat BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT Ic (ma) 2SC2482 hre-ic EMITTER Ta= 26C VceE =20V 0.3 1 3 10 30 100 COLLECTOR CURRENT Ic (ma) VecEsat - ic COMMON EMITTER Ta=25C Ic/Ig=10 1 3 10 30 100 COLLECTOR CURRENT Ic (ma) VBEsat - Ic COMMON EMITTER icflp =5 Ta = 28C 0.3 1 3 10 30 100 COLLECTOR CURRENT Ic (mA) Ic-Vee 100 COMMON EMITTER Vce =10V QR 2 02 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE Vee (V)