a FEATURES Excellent Sonic Characteristics Low Noise: 6 nV/Hz Low Distortion: 0.0006% High Slew Rate: 22 V/s Wide Bandwidth: 9 MHz Low Supply Current: 5 mA Low Offset Voltage: 1 mV Low Offset Current: 2 nA Unity Gain Stable SOIC-8 Package Dual Bipolar/JFET, Audio Operational Amplifier OP275* PIN CONNECTIONS 8-Lead Narrow-Body SO (S Suffix) OUT A 1 8 V+ -IN A 2 7 OUT B 6 -IN B 5 +IN B +IN A 3 V- 4 OP275 8-Lead Epoxy DIP (P Suffix) OP275 8 V+ 2 7 OUT B 3 6 -IN B 4 5 +IN B OUT A 1 -IN A +IN A V- APPLICATIONS High Performance Audio Active Filters Fast Amplifiers Integrators GENERAL DESCRIPTION The OP275 is the first amplifier to feature the Butler Amplifier front-end. This new front-end design combines both bipolar and JFET transistors to attain amplifiers with the accuracy and low noise performance of bipolar transistors, and the speed and sound quality of JFETs. Total Harmonic Distortion plus Noise equals that of previous audio amplifiers, but at much lower supply currents. A very low l/f corner of below 6 Hz maintains a flat noise density response. Whether noise is measured at either 30 Hz or 1 kHz, it is only 6 nV/Hz. The JFET portion of the input stage gives the OP275 its high slew rates to keep distortion low, even when large output swings are required, and the 22 V/s slew rate of the OP275 is the fastest of any standard audio amplifier. Best of all, this low noise and high speed are accomplished using less than 5 mA of supply current, lower than any standard audio amplifier. Improved dc performance is also provided with bias and offset currents greatly reduced over purely bipolar designs. Input offset voltage is guaranteed at 1 mV and is typically less than 200 V. This allows the OP275 to be used in many dc coupled or summing applications without the need for special selections or the added noise of additional offset adjustment circuitry. The output is capable of driving 600 loads to 10 V rms while maintaining low distortion. THD + Noise at 3 V rms is a low 0.0006%. The OP275 is specified over the extended industrial (-40C to +85C) temperature range. OP275s are available in both plastic DIP and SOIC-8 packages. SOIC-8 packages are available in 2500 piece reels. Many audio amplifiers are not offered in SOIC-8 surface mount packages for a variety of reasons; however, the OP275 was designed so that it would offer full performance in surface mount packaging. *Protected by U.S. Patent No. 5,101,126. REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. (c) Analog Devices, Inc., 1995 One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703 OP275-SPECIFICATIONS ELECTRICAL CHARACTERISTICS (@ V = 15.0 V, T = +25C unless otherwise noted) S Parameter Symbol AUDIO PERFORMANCE THD + Noise Voltage Noise Density en Current Noise Density Headroom in INPUT CHARACTERISTICS Offset Voltage VOS Input Bias Current IB Input Offset Current IOS Input Voltage Range Common-Mode Rejection Ratio VCM CMRR Large Signal Voltage Gain AVO Offset Voltage Drift VOS/T A Conditions Min VIN = 3 V rms, RL = 2 k, f = 1 kHz f = 30 Hz f = 1 kHz f = 1 kHz THD + Noise 0.01%, RL = 2 k, VS = 18 V -40C TA +85C VCM = 0 V VCM = 0 V, -40C TA +85C VCM = 0 V VCM = 0 V, -40C TA +85C VCM = 10.5 V, -40C TA +85C RL = 2 k RL = 2 k, -40C TA +85C RL = 600 Typ Units 0.006 7 6 1.5 % nV/Hz nV/Hz pA/Hz >12.9 dBu 100 100 2 2 -10.5 80 250 175 Max 1 1.25 350 400 50 100 +10.5 106 mV mV nA nA nA nA V 200 2 dB V/mV V/mV V/mV V/C OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 2 k RL = 2 k, -40C TA +85C RL = 600 , VS = 18 V -13.5 -13 13.9 +13.5 13.9 +13 +14, -16 V V V POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 4.5 V to 18 V VS = 4.5 V to 18 V, -40C TA +85C VS = 4.5 V to 18 V, VO = 0 V, RL = , -40C TA +85C VS = 22 V, VO = 0 V, RL = , -40C TA +85C 85 111 dB Supply Current Supply Voltage Range DYNAMIC PERFORMANCE Slew Rate Full-Power Bandwidth Gain Bandwidth Product Phase Margin Overshoot Factor ISY VS SR BWP GBP om RL = 2 k VIN = 100 mV, AV = +1, RL = 600 , CL = 100 pF 80 dB 4 4.5 15 22 5 mA 5.5 22 mA V 9 62 V/s kHz MHz Degrees 10 % Specifications subject to change without notice. -2- REV. A OP275 WAFER TEST LIMITS (@ V = 15.0 V, T = +25C unless otherwise noted) S A Parameter Symbol Offset Voltage Input Bias Current Input Offset Current Input Voltage Range1 Common-Mode Rejection Ratio Power Supply Rejection Ratio Large Signal Voltage Gain Output Voltage Range Supply Current VOS IB IOS VCM CMRR PSRR AVO VO ISY Conditions VCM = 0 V VCM = 0 V VCM = 10.5 V V = 4.5 V to 18 V RL = 2 k RL = 10 k VO = 0 V, RL = Limit Units 1 350 50 10.5 80 85 250 13.5 5 mV max nA max nA max V min dB min dB min V/mV min V min mA max NOTES Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing. 1 Guaranteed by CMRR test. Specifications subject to change without notice. ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 V Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 V Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . 7.5 V Output Short-Circuit Duration to GND3 . . . . . . . . . Indefinite Storage Temperature Range P, S Package . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C Operating Temperature Range OP275G . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Junction Temperature Range P, S Package . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300C Package Type JA4 JC Units 8-Pin Plastic DIP (P) 8-Pin SOIC (S) 103 158 43 43 C/W C/W ORDERING GUIDE Model Temperature Range Package Option OP275GP OP275GS OP275GSR OP275GBC -40C to +85C -40C to +85C -40C to +85C +25C 8-Pin Plastic DIP 8-Pin SOIC SO-8 Reel, 2500 pcs. DICE DICE CHARACTERISTICS NOTES 1 Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted. 2 For supply voltages greater than 22 V, the absolute maximum input voltage is equal to the supply voltage. 3 Shorts to either supply may destroy the device. See data sheet for full details. 4 JA is specified for the worst case conditions, i.e., JA is specified for device in socket for cerdip, P-DIP, and LCC packages; JA is specified for device soldered in circuit board for SOIC package. Die Size 0.070 x 0.108 in. (7,560 sq. mils) Substrate is connected to V- CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP275 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. REV. A -3- WARNING! ESD SENSITIVE DEVICE OP275-Typical Performance Curves 1500 1250 +VOM 10 5 0 -5 -10 -VOM -15 VS = 15V VO = 10V 40 +GAIN RL = 2k 1000 -GAIN RL = 2k 750 +GAIN RL = 600 500 -GAIN RL = 600 250 -20 -25 0 5 10 15 20 SUPPLY VOLTAGE - V 0 -50 25 Output Voltage Swing vs. Supply Voltage -25 0 25 50 TEMPERATURE - C 75 90 10 45 0 -90 -30 -135 -40 -180 10k 135 20 90 MARKER 15 309.058Hz PHASE (A/R 90.606Deg 45 0 0 -10 -45 -20 -90 10k 100k 1M Closed-Loop Gain and Phase, AV = +1 20 AVCL = +10 10 0 AVCL = +1 POWER SUPPLY REJECTION - dB 80 60 40 20 1k 10k 100k FREQUENCY - Hz 1M Common-Mode Rejection vs. Frequency 10M AVCL = +1 40 AVCL = +10 30 AVCL = +100 20 10 10k 100k 1M 10M FREQUENCY - Hz 0 100 100M 1k 10k 100k FREQUENCY - Hz 1M 10M Closed-Loop Output Impedance vs. Frequency 100 120 100 VS = 15V TA = +25C -10 Closed-Loop Gain vs. Frequency 120 COMMON-MODE REJECTION - dB 50 30 FREQUENCY - Hz 0 100 VS = 15V TA = +25C AVCL = +100 -30 1k VS = 15V TA = +25C 10M -20 10M Open-Loop Gain, Phase vs. Frequency 1M FREQUENCY - Hz 80 100 GAIN +PSRR OPEN-LOOP GAIN - dB 10 PHASE - Degrees GAIN - dB 30 100k 60 40 40 -45 -20 IMPEDANCE - VS = 15V TA = +25C 50 0 -10 100 Open-Loop Gain vs. Temperature CLOSED-LOOP GAIN - dB MARKER 15 309.059Hz MAG (A/H) 60.115dB 135 20 50 60 180 VS = 15V TA = +25C 30 80 VS = 15V TA = +25C 60 -PSRR 40 20 0 10 100 1k 10k 100k FREQUENCY - Hz Power Supply Rejection vs. Frequency -4- 1M 60 40 PHASE VS = 15V RL = 2k TA = +25C 0 45 O m = 58 90 20 135 0 180 -20 225 -40 270 -60 1k 10k 100k 1M 10M FREQUENCY - Hz PHASE - Degrees 15 OPEN-LOOP GAIN - V/mV OUTPUT VOLTAGE SWING - V 20 PHASE - Degrees TA = +25C RL = 2k GAIN - dB 25 100M Open-Loop Gain, Phase vs. Frequency REV. A OP275 100 60 Om 9 55 GBW 8 50 80 60 AVCL = +1 POSITIVE EDGE 50 40 VS = 15V RL = 2k VIN = 100mV p-p 30 20 -25 0 25 50 TEMPERATURE - C 75 0 0 200 300 400 100 LOAD CAPACITANCE - pF ABSOLUTE OUTPUT CURRENT - mA SUPPLY CURRENT - mA TA = +25C VS = 15V AVCL = +1 RL = 2k 10 4.5 TA = +85C TA = +25C 4.0 TA = -40C 3.5 5 10k 100k 1M FREQUENCY - Hz 10M Maximum Output Swing vs. Frequency 3.0 CURRENT NOISE DENSITY - pA/ Hz 250 200 150 100 50 TA = +25C VS = 15V 1k LOAD RESISTANCE - 10k 5 90 SINK 80 70 60 50 40 SOURCE 30 20 -50 25 10 15 20 SUPPLY VOLTAGE - V VS = 15V -25 0 25 50 TEMPERATURE - C 75 100 Short Circuit Current vs. Temperature 500 VS = 15V -40C to +85C VS = 15V TA = +25C 4 400 3 300 BASED ON 920 OP AMPS 2 200 1 100 0 -25 0 25 50 TEMPERATURE - C 75 100 Input Bias Current vs. Temperature REV. A 4 100 5 VS = 15V 0 -50 0 Supply Current vs. Supply Voltage 300 +VOM 6 110 UNITS 0 1k 8 120 25 15 10 Maximum Output Voltage vs. Load Resistance 5.0 20 -VOM 12 0 100 500 Small-Signal Overshoot vs. Load Capacitance 30 14 2 10 40 100 Gain Bandwidth Product, Phase Margin vs. Temperature MAXIMUM OUTPUT SWING - V 70 OVERSHOOT - % 10 7 -50 INPUT BIAS CURRENT - nA 16 AVCL = +1 NEGATIVE EDGE 90 MAXIMUM OUTPUT SWING - V 65 PHASE MARGIN - Degrees GAIN BANDWIDTH PRODUCT - MHz 11 10 100 1k FREQUENCY - Hz 100k Current Noise Density vs. Frequency -5- 0 1 2 3 4 5 6 7 TCVOS - V/C TCVOS Distribution 8 9 10 OP275-Typical Performance Curves 50 10 200 VS = 15V TA = +25C BASED ON 920 OP AMPS TA = +25C VS = 15V 8 45 6 160 +0.1% +0.01% UNITS 120 80 SLEW RATE - V/s STEP SIZE - V 4 2 0 -2 -4 -0.1% 40 -0.01% -6 40 35 -SR 30 +SR 25 -8 0 -500-400-300-200-100 0 100 200 300 400 500 INPUT OFFSET VOLTAGE - V -10 20 0 100 200 300 400 500 600 700 800 900 SETTLING TIME - ns 50 35 VS = 15V RL = 2k 30 TA = +25C VS = 15V RL = 2k 45 SLEW RATE - V/s SLEW RATE - V/s 40 500 Slew Rate vs. Capacitive Load Settling Time vs. Step Size Input Offset (VOS) Distribution 200 300 400 100 CAPACITIVE LOAD - pF 0 25 20 15 10 -SR 40 35 30 +SR 25 5 0 0 .2 .4 .6 .8 20 -50 1.0 -25 DIFFERENTIAL INPUT VOLTAGE - V 75 100 Slew Rate vs. Temperature Slew Rate vs. Differential Input Voltage 100 90 0 25 50 TEMPERATURE - C 100 90 10 10 0% 0% 5V 200ns 5V Negative Slew Rate RL = 2 k, VS = 15 V, AV = +1 200ns Positive Slew Rate RL = 2 k, VS = 15 V, AV = +1 CH A: 80.0 V FS MKR: 6.23 nV/Hz 10.0 V/DIV 100 90 10 0% 50mV 100ns 0 Hz MKR: Small Signal Response RL = 2 k, VS = 15 V, AV = +1 1 000 Hz 2.5 kHz BW: 15.0 MHz Voltage Noise Density vs. Frequency VS = 15 V -6- REV. A OP275 APPLICATIONS Short Circuit Protection THD + NOISE - % 0.010 The OP275 has been designed with inherent short circuit protection to ground. An internal 30 resistor, in series with the output, limits the output current at room temperature to ISC + = 40 mA and ISC- = -90 mA, typically, with 15 V supplies. However, shorts to either supply may destroy the device when excessive voltages or currents are applied. If it is possible for a user to short an output to a supply, for safe operation, the output current of the OP275 should be design-limited to 30 mA, as shown in Figure 1. RFB 10 OUTPUT SWING - V rms The output of the OP275 is designed to maintain low harmonic distortion while driving 600 loads. However, driving 600 loads with very high output swings results in higher distortion if clipping occurs. A common example of this is in attempting to drive 10 V rms into any load with 15 volt supplies. Clipping will occur and distortion will be very high. To attain low harmonic distortion with large output swings, supply voltages may be increased. Figure 5 shows the performance of the OP275 driving 600 loads with supply voltages varying from 18 volts to 20 volts. Notice that with 18 volt supplies the distortion is fairly high, while with 20 volt supplies it is a very low 0.0007%. 0.0001 FEEDBACK VOUT A1 0.001 A1 = 1/2 OP275 THD - % Figure 1. Recommended Output Short Circuit Protection 0.010 THD + NOISE - % RL = 600, 2k, 10k VS = 15V VIN = 3V rms AV = +1 RL = 600 VOUT = 10 Vrms @ 1kHz 0.01 0.1 0 17 0.001 0.0005 100 1 Figure 4. Headroom, THD + Noise vs. Output Amplitude (V rms); RLOAD = 600 , VSUP = 18 V Total Harmonic Distortion + Noise (THD + N) of the OP275 is well below 0.001% with any load down to 600 . However, this is dependent upon the peak output swing. In Figure 2 it is seen that the THD + Noise with 3 V rms output is below 0.001%. In the following Figure 3, THD + Noise is below 0.001% for the 10 k and 2 k loads but increases to above 0.1% for the 600 load condition. This is a result of the output swing capability of the OP275. Notice the results in Figure 4, showing THD vs. VIN (V rms). This figure shows that the THD + Noise remains very low until the output reaches 9.5 volts rms. This performance is similar to competitive products. 20 0.001 0.0001 0.5 Total Harmonic Distortion RX 332 VS = 18V RL = 600 1k 10k 18 19 20 SUPPLY VOLTAGE - V 21 22 Figure 5. THD + Noise vs. Supply Voltage 20k FREQUENCY - Hz Noise Figure 2. THD + Noise vs. Frequency vs. RLOAD The voltage noise density of the OP275 is below 7 nV/Hz from 30 Hz. This enables low noise designs to have good performance throughout the full audio range. Figure 6 shows a typical OP275 with a 1/f corner at 2.24 Hz. THD + NOISE - % 1 600 0.1 AV = +1 VS = 18V VIN = 10V rms 80kHz FILTER 0.010 CH A: 80.0 V FS MKR: 45.6 V/Hz 10.0 V/DIV 2k 0.001 10k 0.0001 20 100 1k 10k 20k FREQUENCY - Hz Figure 3. THD + Noise vs. RLOAD; VIN =10 V rms, 18 V Supplies 0 Hz MKR: 2.24 Hz 10 Hz BW: 0.145 Hz Figure 6. 1/f Noise Corner, VS = 15 V, AV = 1000 REV. A -7- OP275 this effect from occurring in noninverting applications. For these applications, the fix is a simple one and is illustrated in Figure 9. A 3.92 k resistor in series with the noninverting input of the OP275 cures the problem. Noise Testing For audio applications the noise density is usually the most important noise parameter. For characterization the OP275 is tested using an Audio Precision, System One. The input signal to the Audio Precision must be amplified enough to measure it accurately. For the OP275 the noise is gained by approximately 1020 using the circuit shown in Figure 7. Any readings on the Audio Precision must then be divided by the gain. In implementing this test fixture, good supply bypassing is essential. RFB* VOUT VIN RL 2k RS 3.92k 100 909 *RFB IS OPTIONAL Figure 9. Output Voltage Phase Reversal Fix A OP37 OP275 Overload, or Overdrive, Recovery OP37 Overload, or overdrive, recovery time of an operational amplifier is the time required for the output voltage to recover to a rated output voltage from a saturated condition. This recovery time is important in applications where the amplifier must recover quickly after a large abnormal transient event. The circuit shown in Figure 10 was used to evaluate the OP275's overload recovery time. The OP275 takes approximately 1.2 s to recover to VOUT = +10 V and approximately 1.5 s to recover to VOUT = -10 V. OUTPUT B 909 4.42k 100 490 909 100 Figure 7. Noise Test Fixture Input Overcurrent Protection The maximum input differential voltage that can be applied to the OP275 is determined by a pair of internal Zener diodes connected across its inputs. They limit the maximum differential input voltage to 7.5 V. This is to prevent emitter-base junction breakdown from occurring in the input stage of the OP275 when very large differential voltages are applied. However, in order to preserve the OP275's low input noise voltage, internal resistances in series with the inputs were not used to limit the current in the clamp diodes. In small signal applications, this is not an issue; however, in applications where large differential voltages can be inadvertently applied to the device, large transient currents can flow through these diodes. Although these diodes have been designed to carry a current of 5 mA, external resistors as shown in Figure 8 should be used in the event that the OP275's differential voltage were to exceed 7.5 V. 1.4k 2 R2 10k 2 3 VIN 4V p-p @100Hz A1 RS 909 1 VOUT RL 2.43k A1 = 1/2 OP275 Figure 10. Overload Recovery Time Test Circuit Measuring Settling Time The design of OP275 combines high slew rate and wide gainbandwidth product to produce a fast-settling (tS < 1 s) amplifier for 8- and 12-bit applications. The test circuit designed to measure the settling time of the OP275 is shown in Figure 11. This test method has advantages over false-sum node techniques in that the actual output of the amplifier is measured, instead of an error voltage at the sum node. Common-mode settling effects are exercised in this circuit in addition to the slew rate and bandwidth effects measured by the false-sum-node method. Of course, a reasonably flat-top pulse is required as the stimulus. - OP275 1.4k 3 R1 1k 6 + Figure 8. Input Overcurrent Protection Output Voltage Phase Reversal The output waveform of the OP275 under test is clamped by Schottky diodes and buffered by the JFET source follower. The signal is amplified by a factor of ten by the OP260 and then Schottky-clamped at the output to prevent overloading the oscilloscope's input amplifier. The OP41 is configured as a fast integrator which provides overall dc offset nulling. Since the OP275's input stage combines bipolar transistors for low noise and p-channel JFETs for high speed performance, the output voltage of the OP275 may exhibit phase reversal if either of its inputs exceed its negative common-mode input voltage. This might occur in very severe industrial applications where a sensor, or system, fault might apply very large voltages on the inputs of the OP275. Even though the input voltage range of the OP275 is 10.5 V, an input voltage of approximately -13.5 V will cause output voltage phase reversal. In inverting amplifier configurations, the OP275's internal 7.5 V input clamping diodes will prevent phase reversal; however, they will not prevent High Speed Operation As with most high speed amplifiers, care should be taken with supply decoupling, lead dress, and component placement. Recommended circuit configurations for inverting and noninverting applications are shown in Figures 12 and Figure 13. -8- REV. A OP275 16-20V - + +15V 1k 0.1F RL V+ D3 OUTPUT (TO SCOPE) 1k 2N4416 DUT V- D1 1/2 OP260AJ 1F D2 0.1F + D4 RF 2k 10k - IC2 10k 16-20V RG 222 2N2222A 5V 1N4148 750 15k SCHOTTKY DIODES D1-D4 ARE HEWLETT-PACKARD HP5082-2835 IC1 IS 1/2 OP260AJ IC2 IS PMI OP41EJ -15V Figure 11. OP275's Settling Time Test Fixture CFB +15V 0.1F RS 2 3 VIN RFB 10F + CS CIN 8 1/2 OP275 1 VOUT VOUT RL 4 0.1F 2k 10F + Figure 14. Compensating the Feedback Pole Attention to Source Impedances Minimizes Distortion Since the OP275 is a very low distortion amplifier, careful attention should be given to source impedances seen by both inputs. As with many FET-type amplifiers, the p-channel JFETs in the OP275's input stage exhibit a gate-to-source capacitance that varies with the applied input voltage. In an inverting configuration, the inverting input is held at a virtual ground and, as such, does not vary with input voltage. Thus, since the gate-to-source voltage is constant, there is no distortion due to input capacitance modulation. In noninverting applications, however, the gate-to-source voltage is not constant. The resulting capacitance modulation can cause distortion above 1 kHz if the input impedance is > 2 k and unbalanced. -15V Figure 12. Unity Gain Follower +15V 10F + 0.1F 10pF VIN 4.99k 4.99k 2 3 8 1/2 OP275 1 4 VOUT Figure 15 shows some guidelines for maximizing the distortion performance of the OP275 in noninverting applications. The best way to prevent unwanted distortion is to ensure that the parallel combination of the feedback and gain setting resistors (R F and RG) is less than 2 k. Keeping the values of these resistors small has the added benefits of reducing the thermal noise 2k 2.49k 0.1F 10F + -15V RG Figure 13. Unity Gain Inverter In inverting and noninverting applications, the feedback resistance forms a pole with the source resistance and capacitance (RS and CS) and the OP275's input capacitance (CIN), as shown in Figure 14. With RS and RF in the kilohm range, this pole can create excess phase shift and even oscillation. A small capacitor, CFB, in parallel and RFB eliminates this problem. By setting RS (CS + CIN) = RFBCFB, the effect of the feedback pole is completely removed. REV. A -9- RF RS* 0P275 VOUT VIN * RS = RG//RF IF RG//RF > 2k FOR MINIMUM DISTORTION Figure 15. Balanced Input Impedance to Minimize Distortion in Noninverting Amplifier Circuits OP275 of the circuit and dc offset errors. If the parallel combination of R F and RG is larger than 2 k, then an additional resistor, R S, should be used in series with the noninverting input. The value of RS is determined by the parallel combination of RF and RG to maintain the low distortion performance of the OP275. Driving Capacitive Loads importance. Like the transformer based design, either output can be shorted to ground for unbalanced line driver applications without changing the circuit gain of 1. Other circuit gains can be set according to the equation in the diagram. This allows the design to be easily set to noninverting, inverting, or differential operation. The OP275 was designed to drive both resistive loads to 600 and capacitive loads of over 1000 pF and maintain stability. While there is a degradation in bandwidth when driving capacitive loads, the designer need not worry about device stability. The graph in Figure 16 shows the 0 dB bandwidth of the OP275 with capacitive loads from 10 pF to 1000 pF. 10 9 BANDWIDTH - MHz 8 7 6 5 4 3 2 A 3-Pole, 40 kHz Low-Pass Filter The closely matched and uniform ac characteristics of the OP275 make it ideal for use in GIC (Generalized Impedance Converter) and FDNR (Frequency-Dependent Negative Resistor) filter applications. The circuit in Figure 18 illustrates a linear-phase, 3-pole, 40 kHz low-pass filter using an OP275 as an inductance simulator (gyrator). The circuit uses one OP275 (A2 and A3) for the FDNR and one OP275 (A1 and A4) as an input buffer and bias current source for A3. Amplifier A4 is configured in a gain of 2 to set the pass band magnitude response to 0 dB. The benefits of this filter topology over classical approaches are that the op amp used in the FDNR is not in the signal path and that the filter's performance is relatively insensitive to component variations. Also, the configuration is such that large signal levels can be handled without overloading any of the the filter's internal nodes. As shown in Figure 19, the OP275's symmetric slew rate and low distortion produce a clean, wellbehaved transient response. 1 R1 95.3k 0 0 200 400 600 CLOAD - pF 800 1000 2 3 VIN Figure 16. Bandwidth vs. CLOAD A1 1 C1 2200pF R2 787 High Speed, Low Noise Differential Line Driver The circuit of Figure 17 is a unique line driver widely used in industrial applications. With 18 V supplies, the line driver can deliver a differential signal of 30 V p-p into a 2.5 k load. The high slew rate and wide bandwidth of the OP275 combine to yield a full power bandwidth of 130 kHz while the low noise front end produces a referred-to-input noise voltage spectral density of 10 nV/Hz. C2 2200pF 2 1 2 3 R1 2k VIN 3 2 A1 1 3 5 R7 100k R9 1k 6 A4 7 VOUT R8 1k C3 2200pF A1, A4 = 1/2 OP275 A2, A3 = 1/2 OP275 R9 50 R5 1.82k VO1 R11 1k Figure 18. A 3-Pole, 40 kHz Low-Pass Filter R7 2k R4 2k VO2 - VO1 = VIN 1 P1 10k R2 2k R5 2k R6 2k 100 90 6 A1 = 1/2 OP275 A2 A3 C4 2200pF 7 R4 1.87k R3 2k A2 5 6 R3 1.82k R6 4.12k 5 A3 A2, A3 = 1/2 OP275 7 R10 50 R12 1k VOUT 10Vp-p 10kHz VO2 R8 2k 10 0% R3 GAIN = R1 SET R2, R4, R5 = R1 AND R6, R7, R8 = R3 SCALE: VERTICAL-2V/ DIV HORIZONTAL-10s/ DIV Figure 17. High Speed, Low Noise Differential Line Driver The design is a transformerless, balanced transmission system where output common-mode rejection of noise is of paramount Figure 19. Low-Pass Filter Transient Response -10- REV. A OP275 OP275 SPICE Model * POLE/ZERO PAIR AT 1.5 MHz/2.7 MHz * R8 21 98 1E-3 R9 21 22 1.25E-3 C4 22 98 47.2E-12 G2 98 21 18 28 1E-3 * * POLE AT 100 MHz * R10 23 98 1 C5 23 98 1.59E-9 G3 98 23 21 28 1 * * POLE AT 100 MHz * R11 24 98 1 C6 24 98 1.59E-9 G4 98 24 23 28 1 * * COMMON-MODE GAIN NETWORK WITH ZERO AT 1 kHz * R12 25 26 1E6 C7 25 26 1.5915E-12 R13 26 98 1 E2 25 98 POLY(2) 1 98 2 98 0 2.50 2.50 * * POLE AT 100 MHz * R14 27 98 1 C8 27 98 1.59E-9 G5 98 27 24 28 1 * * OUTPUT STAGE * R15 28 99 100E3 R16 28 50 100E3 C9 28 50 1E-6 ISY 99 50 1.85E-3 R17 29 99 100 R18 29 50 100 L2 29 34 1E-9 G6 32 50 27 29 10E-3 G7 33 50 29 27 10E-3 G8 29 99 99 27 10E-3 G9 50 29 27 50 10E-3 V4 30 29 1.3 V5 29 31 3.8 F1 29 0 V4 1 F2 0 29 V5 1 D5 27 30 DX D6 31 27 DX D7 99 32 DX D8 99 33 DX D9 50 32 DY D10 50 33 DY * * MODELS USED * .MODEL QX PNP(BF=5E5) .MODEL DX D(IS=1E-12) .MODEL DY D(IS=1E-15 BV=50) .MODEL DZ D(IS=1E-15 BV=7.0) .MODEL DEN D(IS=1E-12 RS=4.35K KF=1.95E-15 AF=1) .MODEL DIN D(IS=1E-12 RS=268 KF=1.08E-15 AF=1) .ENDS * * Node assignments * noninverting input * inverting input * positive supply * negative supply * output * * .SUBCKT OP275 1 2 99 50 34 * * INPUT STAGE & POLE AT 100 MHz * R3 5 51 2.188 R4 6 51 2.188 CIN 1 2 3.7E-12 CM1 1 98 7.5E-12 CM2 2 98 7.5E-12 C2 5 6 364E-12 I1 97 4 100E-3 IOS 1 2 1E-9 EOS 9 3 POLY(1) 26 28 0.5E-3 1 Q1 5 2 7 QX Q2 6 9 8 QX R5 7 4 1.672 R6 8 4 1.672 D1 2 36 DZ D2 1 36 DZ EN 3 1 10 0 1 GN1 0 2 13 0 1E-3 GN2 0 1 16 0 1E-3 * EREF 98 0 28 0 1 EP 97 0 99 0 1 EM 51 0 50 0 1 * * VOLTAGE NOISE SOURCE * DN1 35 10 DEN DN2 10 11 DEN VN1 35 0 DC 2 VN2 0 11 DC 2 * * CURRENT NOISE SOURCE * DN3 12 13 DIN DN4 13 14 DIN VN3 12 0 DC 2 VN4 0 14 DC 2 * * CURRENT NOISE SOURCE * DN5 15 16 DIN DN6 16 17 DIN VN5 15 0 DC 2 VN6 0 17 DC 2 * * GAIN STAGE & DOMINANT POLE AT 32 Hz * R7 18 98 1.09E6 C3 18 98 4.55E-9 G1 98 18 5 6 4.57E-1 V2 97 19 1.35 V3 20 51 1.35 D3 18 19 DX D4 20 18 DX * REV. A -11- OP275 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 8-Lead Narrow-Body SOIC (S Suffix) 0.1968 (5.00) 0.1890 (4.80) 8 0.430 (10.92) 0.348 (8.84) 5 0.2440 (6.20) 0.2284 (5.80) 8 0.1574 (4.00) 0.1497 (3.80) 1 5 1 4 4 PIN 1 0.0688 (1.75) 0.0532 (1.35) 0.0098 (0.25) 0.0040 (0.10) SEATING PLANE 0.0500 0.0192 (0.49) (1.27) 0.0138 (0.35) 0.0098 (0.25) BSC 0.0075 (0.19) 0.0196 (0.50) x 45 0.0099 (0.25) 8 0 0.210 (5.33) MAX 0.280 (7.11) 0.240 (6.10) 0.325 (8.25) 0.300 (7.62) 0.060 (1.52) 0.015 (0.38) 0.160 (4.06) 0.115 (2.93) 0.0500 (1.27) 0.0160 (0.41) 0.022 (0.558) 0.100 0.070 (1.77) 0.014 (0.356) (2.54) 0.045 (1.15) BSC 0.195 (4.95) 0.115 (2.93) 0.130 (3.30) MIN SEATING PLANE 0.015 (0.381) 0.008 (0.204) PRINTED IN U.S.A. PIN 1 C1652a-2-7/95 8-Lead Epoxy DIP (P Suffix) -12- REV. A