2N2222ALEADFREE - Central Semiconductor Corp.

2N2221A

2N2222A

SILICON

NPN TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2221A and

2N2222A are silicon NPN epitaxial planar transistors

designed for small signal, general purpose switching

applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS

Collector-Base Voltage VCBO 75 V

Collector-Emitter Voltage VCEO 40 V

Emitter-Base Voltage VEBO 6.0 V

Continuous Collector Current IC 800 mA

Power Dissipation PD 500 mW

Power Dissipation (TC=25°C) PD 1.2 W

Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C

Thermal Resistance ΘJA 350 °C/W

Thermal Resistance ΘJC 146 °C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN MAX UNITS

ICBO V

CB=60V 10 nA

ICBO V

CB=60V, TA=150°C 10 μA

ICEV V

CE=60V, VEB=3.0V 10 nA

IEBO V

EB=3.0V 10 nA

BVCBO I

C=10μA 75 V

BVCEO I

C=10mA 40 V

BVEBO I

E=10μA 6.0 V

VCE(SAT) I

C=150mA, IB=15mA 0.3 V

VCE(SAT) I

C=500mA, IB=50mA 1.0 V

VBE(SAT) I

C=150mA, IB=15mA 0.6 1.2 V

VBE(SAT) I

C=500mA, IB=50mA 2.0 V

2N2221A 2N2222A

MIN MAX MIN MAX

hFE V

CE=10V, IC=0.1mA 20 - 35 -

hFE V

CE=10V, IC=1.0mA 25 - 50 -

hFE V

CE=10V, IC=10mA 35 - 75 -

hFE V

CE=10V, IC=10mA, TA=-55°C 15 - 35 -

hFE V

CE=10V, IC=150mA 40 120 100 300

hFE V

CE=1.0V, IC=150mA 20 - 50 -

hFE V

CE=10V, IC=500mA 25 - 40 -

TO-18 CASE

R4 (24-July 2013)

www.centralsemi.com

2N2221A

2N2222A

SILICON

NPN TRANSISTORS

TO-18 CASE - MECHANICAL OUTLINE

LEAD CODE:

1) Emitter

2) Base

3) Collector

MARKING: FULL PART NUMBER

ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) 2N2221A 2N2222A

SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS

fT V

CE=20V, IC=20mA, f=100MHz 250 - 300 - MHz

Cob V

CB=10V, IE=0, f=100kHz - 8.0 - 8.0 pF

Cib V

EB=0.5V, IC=0, f=100kHz - 25 - 25 pF

hie V

CE=10V, IC=1.0mA, f=1.0kHz 1.0 3.5 2.0 8.0 kΩ

hie V

CE=10V, IC=10mA, f=1.0kHz 0.2 1.0 0.25 1.25 kΩ

hre V

CE=10V, IC=1.0mA, f=1.0kHz - 5.0 - 8.0 x10-4

hre V

CE=10V, IC=10mA, f=1.0kHz - 2.5 - 4.0 x10-4

hfe V

CE=10V, IC=1.0mA, f=1.0kHz 30 150 50 300

hfe V

CE=10V, IC=10mA, f=1.0kHz 50 300 75 375

hoe V

CE=10V, IC=1.0mA, f=1.0kHz 3.0 15 5.0 35 μS

hoe V

CE=10V, IC=10mA, f=1.0kHz 10 100 25 200 μS

rb’Cc V

CB=10V, IE=20mA, f=31.8MHz - 150 - 150 ps

NF VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz - - - 4.0 dB

td V

CC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 10 - 10 ns

tr V

CC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 25 - 25 ns

ts V

CC=30V, IC=150mA, IB1=IB2=15mA - 225 - 225 ns

tf V

CC=30V, IC=150mA, IB1=IB2=15mA - 60 - 60 ns

www.centralsemi.com

R4 (24-July 2013)