JAN and JANTX 1N5614 thru 1N5622 Vishay Semiconductors Patented* formerly Glass Passivated Rectifiers 1.0 (25.4) MIN. Features * Qualified to MIL-PRF-19500/427 * Class 1 high temperature metallurgically bonded construction brazed > 600C * 1.0 ampere operation at TA = 55C with no thermal runaway * Typical IR less than 0.1A * Cavity-free, glass passivated junction. In epoxy over hermetic glass * High temperature soldering guaranteed: 350C/10 seconds, 0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) I ED MIL I TA Reverse Voltage 200 to 1000V Forward Current 1.0A FI DO-204AL (EG1) Q RY UA L Dimensions in inches and (millimeters) (R) 1.0 (25.4) MIN. Mechanical Data Case: DO-204AL, molded epoxy over glass body (EG1) Terminals: Solder plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.015oz., 0.4g Flammability: Epoxy is rated UL 94V-0. 0.034 (0.86) 0.028 (0.71) DIA. * Glass-plastic encapsulation technique is covered by Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306 Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Prefix J = JAN Quality Level; Prefix JX = JANTX Quality Level Parameter Symbol J,JX 1N5614 J,JX 1N5616 J,JX 1N5618 J,JX 1N5620 J,JX 1N5622 Unit Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1000 V Maximum RMS voltage VRMS 140 280 420 560 700 V Maximum DC blocking voltage VDC 200 400 600 800 1000 V Maximum average forward rectified current 0.375" (9.5mm) lead length at TA = 55C IF(AV) 1.0 A Peak forward surge current 10 surges of 8.3ms each at 1 min. intervals super-imposed on IO = 750mA DC; VR = rated VRRM TA = 100C (per MIL-STD-750 m 4066) IFSM 25 A Typical thermal resistance(1) RJL RJA 38 45 C/W Operating junction and storage temperature range Barometric Pressure Electrical Characteristics TJ, TSTG C -65 to +175 Hg 8 33 mm Ratings at 25C ambient temperature unless otherwise specified. Minimum reverse breakdown voltage at 50A VBR 220 440 660 880 1100 V VF 1.1 1.3 V IR 0.5 25 A Maximum reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A trr 2.0 s Maximum junction capacitance at 4V, 1MHz CJ 15 pF Maximum instantaneous forward voltage Tp = 300s at 1.0A at 3.0A Maximum DC reverse current at rated DC blocking voltage TA = 25C TA = 100C Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted Document Number 88833 5-Mar-02 www.vishay.com 1 JAN and JANTX 1N5614 thru 1N5622 Vishay Semiconductors formerly Fig. 2 - Typical Instantaneous Forward Characteristics Fig. 1 - Forward Current Derating Curve 1.0 Instantaneous Forward Current (A) Average Forward Rectified Current (A) Ratings and Characteristic Curves (TA = 25C unless otherwise noted) 60 Hz Resistive or Inductive Load 0.375" (9.5mm) Lead length 0.75 0.5 0.25 0 25 50 100 75 150 125 175 10 TJ = 150C 1 TJ = 25C 0.1 Pulse Width = 300s 1% Duty Cycle 0.01 0.4 Ambient Temperature (C) Fig. 3 - Typical Reverse Characteristics 0.8 1.0 1.2 1.4 1.6 Fig. 4 - Typical Junction Capacitance 30 10 Junction Capacitance (pF) Instantaneous Reverse Current (A) 0.6 Instantaneous Forward Voltage (V) TJ = 125C 1 TJ = 75C 0.1 TJ = 25C f = 1.0 MHz Vsig = 50m Vp-p 10 TJ = 25C 0.01 0 1 20 40 60 80 Rated Peak Reverse Voltage (%) www.vishay.com 2 100 1 10 100 Reverse Voltage (V) Document Number 88833 5-Mar-02