INTERFACE SERIES 55460/75460 CIRCUITS DUAL PERIPHERAL DRIVERS BULLETIN NO. OLS 12495, OECEMBER 1976-REVISED AUGUST 1877 PERIPHERAL DRIVERS FOR HIGH-VOLTAGE, HIGH-CURRENT DRIVER APPLICATIONS performance Characterized for Use to 300 mA High-Voltage Outputs SUMMARY OF SERIES S5460/7h400 No Ou La at 30 V (After LOGIC OF * No vain ano many DEVICE | | EYE CIRCUIT PACKAGES se ki SNSE480 ot J * Medium-Spaed Switching rs a ease-of-design "| SNERG2 HAND JG Circuit Flexibility for Varied Applications == ane 2 and Choice of Logie Function _) aNTeaeo. AND? 1.N * TTL- or OTL-Compatible Diode-Clamped a] SeTeeei |. ANT 0, F inputs | SMITE |. WAND GF Standard Supply Voltages _SNTEaES | On 16,7 | SATS NOR 2G, Available in Plastic and Geramic Packages With output transistor base connected externally 1 description eu tout of get Series 55460/75460 dual peripheral drivers are functionally interchangeable with Series SS4508/764508 and Series 56460/75460 peripheral drivers, but are designed for use in systems that require higher breakdown voltages than alther of those series can provide at the expense of slightly slower switching speeds. Typical applications include logic buffers, power drivers, relay drivers, lamp drivers, MOS drivers, line drivers, and memory drivers. Serles 55460 drivers are characterized for operation over the full military temperature range of 65C to 126C; Series 76460 drivers are characterized for operation from 0'C to 70C, The SN55460 and SN75460 are unique general-purpose devices each featuring two standard Series 54/74 TTL gates and two uncon tied, high-current, high-woltage, n-p-n transistors, These devices offer the system designer the flexibility of tailoring the cireult to the application. The SNES461/SN75461, SNEME2/SN7B462, SNSS463/SN7E463, and SN5SS464/SN75464 are dual peripheral AND, NAND, OR, and NOR drivers, respectively, (asuming positive logic) with the output of the gates Intemally connected to the bases of the n-p-n output transistors, CONTENTS PAGE Maxinvun Aatings and Recommended Operating Gomditions . 2. 0-2 - 6 2 se es aD Definitive Specticetiens Types SNEEMGO,GNTEGO 0 Bi Type: GNEBAB1,ENTSHST a3 Types SNSEMG2, SNTSO2 Ba. Types GMSGAGT,GNPRMGS 2 a5 Switching Time Test Circuits and Voltage Wevelorm 0 2 ee ee a? See ener ee en eS 1180 TEXAS INSTRUMENTS INCORPORATEDSERIES 55460/75460 DUAL PERIPHERAL DRIVERS absolute maximum ratings over Operating free-air temperature range (unless otherwise noted) SN55461 SN75461 SN55462 SN75462 SN55460 SN58463 SN75460 SN75463 UNIT SNS55464 SN75464 Supply voltage, Vcc (see Note 1) 7 7 7 7 Vv Input voitage 5.5 5.5 5.5 5.5 Vv Interemitter voitage (see Note 2) 5.5 5.5 5.5 5.5 Vv Voc-to-substrate voltage 40 40 Vv Collector-to-substrate voltage 40 40 Vv Collector-base voltage 40 40 Vv Collector-emitter voltage {see Note 3) 40 40 Vv Collector-emitter voltage (see Note 4) 25 25 Vv Emitter-base voltage 5 5 Vv Off-state output voltage 35 35 Vv Continuous collector or output current (see Note 5} 400 400 400 400 mA Peak collector or output current (tw < 10 ms, duty cycte < 50%, see Note 5) 500 500 500 500 mA J package 1375 1025 Continuous total dissipation at (or below} JG package 1050 825 mW 25C free-air temperature {see Note 6) N package 1150 P package 1000 Operating free-air temperature range 55 to 125 | ~55 to 125 0 to 70 0 to 70 C Storage temperature range 65 to 150 | 65 to 150 | 65 to 150 | 65 to 150 C Lead temperature 1/16 inch from case for 60 seconds Jor JG package 300 300 300 300 C Lead temperature 1/16 inch from case for 10 seconds N or P package 260 260 260 260 c NOTES: 1. Voltage values are with respect to network ground terminal unless otherwise specified. 2. This is the voltage between two emitters of a multiple-emitrer transistor 3. This value applies when the base-emitter resistance (Rae) is equa! to or less than 500 82. 4 5 . This vatue applies between 0 and 10 mA collector current when the base-emitter diode is open-circuited + Both halves of these dual circuits may conduct rated current simultaneously; however, power dissipation averaged over a short time interval must fall within the continuous dissipation rating. 6. For operation above 25C free-air temperature, refer to Dissipation Derating Curves in the Thermal Information Section, which starts On page 11. In the J and JG packages, SN55460 through SN55464 chips are alloy-mounted; SN75460 through SN75464 chips are glass-mounted. recommended operating conditions (see Note 7) SERIES 55460 SERIES 75460 UNIT MIN NOM MAX | MIN NOM MAX Supply voltage, Vec 45 5 5.5 | 4.75 5.25 v Operating free-air temperature, Ta 55 125 0 70} C NOTE 7: For SN55460 and SN75460 only, the substrate (pin 8) must always be at the Most negative device voltage for proper operation. TEXAS INSTRUMENTS INCORPORATED POST OFFICE BOX 225012 DALLAS, TEXAS 75265TYPES SN55460, SN75460 DUAL PERIPHERAL POSITIVE-AND DRIVERS SN55460...J SN75460...JORN DUAL-IN-LINE PACKAGE (TOP VIEW) schematic Vee 2A 2Y 28) 22 SUB 14// 13 |] 12 Li Wj ey] 9 Lf 8 positive logic: Y = AG (gate only) C = AG (gate and transistor) Resistor values shown are nominal. electrical characteristics over recommended operating free-air temperature range (unless otherwise noted) TTL gates SN55460 SN75460 PARAMETER TEST CONDITIONS* UNIT Min TYP MAX |MIN TYP? MAX Vin High-level input vottage 2 2 Vv Vit Low-level input voltage 08 08] V Vik Input clamp voltage Veco =MIN, ly =-12mA 1.20 -15 -1.2 -15] V Vou High-level output volt Vec=MIN, MiL=OBY. | 94 33 24 33 v igh-level output vo : : . oH ms p ae ton = 400 nA Vcc = MIN, ViH=2YV, VoL Low-level output voltage 0.25 05 0.25 04) Vv lon = 16 mA Input current at maximum input A 1 1 iy . - Vec = MAX, Vv, =55V mA input voltage input G 2 2 | High-level i it t input A v MAX VpF24V 40 40 A igh-level input curren = ' ale Hom P inpura | ' 80 go | " i Low-level input t input A | Veg =MAX, Vy =0.4V =16 18) na ow-level input curren = : =0. m. tt P inputG | C | -3.2 =3.2 los Short-circuit output current $ Voc = MAX -18 -35 -55 |-18 -35 55| mA lccH Supply current, outputs high Vec = MAX, Vv, =0 28 4 23 4] mA {ccL Supply current, outputs low Veco =MAX, Vy=5V 7 11 7 11] mA t For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions. tau typical values at Vee = 5 V, Ta = 25C. Not more than one output should be shorted at a time. 1276 TEXAS INSTRUMENTS INCORPORATED POST OFFICE BOX 225012 DALLAS, TEXAS 75265TYPES SN55460, SN75460 DUAL PERIPHERAL POSITIVE-AND DRIVERS electrical characteristics over recommended operating free-air temperature range (unless otherwise noted) output transistors SN55460 75460 PARAMETER TEST CONDITIONSt SN754 UNIT MIN TYP? MAX | MIN TyPt MAX ViBRICBO Collector-Base Breakdown Voltage | Ic = 100 KA, Ig =0 40 40 v v Collector-Emitter Ig=10mA, Ip =0, See Note 8 25 v = 10 mA, =0, io (BRICEO Breakdown Voltage c 8 25 Collector-Emitter Vv to = 100uA, Reg = 5000 40 Vv (BRICER Breakdown Voltage ce x BE 40 V(BR)EBO Emitter-Base Breakdown Voltage | Ie = 100A, Ic =0 5 5 v Vce=3V, Ic = 100 mA, cere c m 25 25 Ta=26C Vv =3V, Ic =300mA, Cee 30 30 h Static Forward Current Ta=25C See Fe Transfer Ratio VcoE=3V, tc =100mA, |Note 8 10 20 Ta = MIN Vce=3V, Ic =300mA, ce c 45 25 Ta =MIN 'g=10mA, Ic =100mA | See 085 1.2 0.85 1 VBE Base-Emitter Voltage 8 = Vv IB=30mA, ! =300mA |Note 8 1 1.4 1 1.2 Vv Collector-Emitter tgB=10mA, I=100mA | Sea 0.25 O05 0.25 04 Vv CE(st) saturation Voltage Igp=30mA, Ic =300mA |Note8 045. O08 045 0.7 tor conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions. Fat typical values are at Voc = 5 V, Ta = 25C. NOTE 8: These parameters must be measured using pulse techniques. ty = 300 us, duty cycle < 2%. switching characteristics, Vcc = 5 V, Ta = 25C TTL gates PARAMETER TEST CONDITIONS MIN TYP MAX |UNIT Propagation delay time, tPLH ' 22 ns low-to-high-level output - CL = 15 pF, Ry = 4002, See Figure 14 t Propagation delay time, 8 ns PHL high-to-low-level output output transistors PARAMETER TEST CONDITIONST MIN TYP MAX |UNIT t Delay tim 10 a ome I=200mA, 1g(4) = 20mMA, 1pi2) = 40 mA, ns tr Rise time 16 ns 7 VBEloff)=-1V, CL =15 pF, Ri = 50, ts Storage time . 23 ns See Figure 2 te Fall time 14 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. gates and transistors combined PARAMETER TEST CONDITIONS MIN TYP MAX [UNIT tPLH Propagation delay time, low-to-high-level output 45 65 ns tPHL Propagation delay time, high-to-low-level output I = 200 mA, CL=15pF, 35 50 ns tTLH Transition time, low-to-high-level output R,_ =502, See Figure 3 10 20 ns tTTHL Transition time, high-to-low-level output 10 20 ns Vs =30V, Io = 300 mA, . 1 f itchi Vs-10 VOH Highevel output voitage after switching Age =500%2, See Figure 4 $s mV 82 Texas INSTRUMENTS INCORPORATED POST OFFICE BOX 225012 DALLAS, TEXAS 75265 1180DUAL TYPES SN55461, SN75461 PERIPHERAL POSITIVE-AND DRIVERS logic FUNCTION TABLE (EACH DRIVER) AB Y L L | L {on state) L HTL (on state} H Lf L (on state) HH ]|H (off state) H = high tevel, L = low level schematic (each driver) 1,642 Resistor values shown are nominal. SN55461...JG SN75461... JG OR P DUAL-IN-LINE PACKAGE (TOP VIEW) vec 2 2A 7 2Y 5 positive fogic: Y = AB vec GNO electrical characteristics over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONSt SNBE464 SN75461 UNIT MIN TYPE MAX | MIN TYP? MAX Vin High-level input voltage 2 2 Vv Vii Low-level input voltage 08 os} V Vik Input clamp voltage Vec = MIN, =-12mA -1.2 -15 -1.2 -15) V | Veco = MIN, Vin =2V, {oH High-level output current Von = 35V 300 100 | WA Vec=MIN, VIL = 0.8. 0.25 08 0.25 04 Vot_ Low-level output voltage tou = 100 mA Vv Voc = MIN, ViL = 98 V, 0.5 08 0.5 0.7 lo = 300 mA Vy Input current at maximum input voltage Voc =MAX, V,=55V 1 1]; mA NH High-level input current Vec =MAX, Vy) =24V 40 40 | KA ie Low-level input current Vcc =MAX, V,=04V -1 ~+1.6 -1 -16] mA lccH Supply current, outputs high Voc = MAX, V)=5V 8 11 8 11 | mA tecL Supply current, outputs low Vcc = MAX, Vy =0 56 76 56 76 | mA tEor conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions. tail typical values are at Veg = 5 V, Ta = 25C. switching characteristics, Vcc = 5 V, TA = 25C PARAMETER TEST CONDITIONS MIN TYP MAX | UNIT tpLH Propagation delay time, low-to-high-evel output 30 55 ns tpHL Propagation delay time, high-to-low-level output Io ~ 200mA, C,_ = 15 pF, 25 40 ns tTLH Transition time, low-to-high-evel output Rx, = 502, See Figure 3 8 20 ns tTHL Transition time, high-to-low-level output 10 20 ns | ao Vs =30V, lo = 300 mA, Von _ High-level output voltage after switching . Vs10 mV See Figure 4 1180 TEXAS INSTRUMENTS INCORPORATED POST OFFICE BOX 225012 D. ALLAS, TEXAS 75265 83TYPES SN55462, SN75462 DUAL PERIPHERAL POSITIVE-NAND DRIVERS logic FUNCTION TABLE (EACH DRIVER) AB Y LL | H (off state) LH] H (off state) HL | H (off state) HHI Lion state) | H = nigh level, L = low level schematic (each driver) SN55462...JG SN76462...JGORP DUAL-IN-LINE PACKAGE (TOP VIEW) voc 2B 2A oy Siu 7 i) 6 S$ LPP err ayy 4 } 1A 1B Vy NO positive logic: Y = AB aku VK 5008 Resistor vatues shown are nominal. electrical characteristics over recommended operating free-air temperature range (unless otherwise noted) vec GND PARAMETER TEST CONDITIONS SN55462 SN75462 UNIT MIN Tyet MAX [MIN TYP? MAX Vith High-level input voltage 2 2 Vv VIL Low-level input voltage 0.8 08| Vv Vik Input clamp voltage Voc = MIN, 1)=-12mA -1.2 -15 -12 -15] V . Voc = MIN, Vit =O08V, 'oH = High-level output current Vou = 35 V 300 100 | uA Veo MIN, Vin= 2, 0.25 05 0.25 04 VoL Low4evel output voltage LoL = 100 mA Vv Voc = MIN, ViH=z2V, 0.5 0.8 0.5 0.7 lo_ = 300 mA Input current at maximum input voltage Vcc =MAX, V)*5.5V 1 T | mA NH High-level input current Voc =MAX, Vip =24V 40 40 | wA Ne Low-level input current Voc =MAX, VW =0.4V -i1 -1.6 -1.1 1,6 | mA ICCH Supply current, outputs high Voc =MAX, V,*0V 13 7 13 17 | mA locL Supply current, outputs low Voc =MAX, = V, =5V 61 76 61 76 | mA 'For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions. fait typical values are at Veg = SV, Ta = 28C. switching characteristics, Vcc = 5 V, Ta = 25C PARAMETER TEST CONDITIONS MIN TYP MAX JUNIT tPLH Propagation detay time, low-to-high-level output 45 65 ns tpHL_ Propagation delay time, high-to-low-level output {qo = 200mA, Cy =15 pF, 30 50 ns tTLH Transition time, low-to-high-level output RL = 50x, See Figure 3 13 25 ns tTHL Transition time, high-to-low-level output 10 20 ns Vg =30V, Ig = 300 mA, Vou High-level output voltage after switching So Figure 4 Vg10 mV TEXAS INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75266 INCORPORATED 1180TYPES SN55463, SN75463 DUAL PERIPHERAL POSITIVE-OR DRIVERS logic FUNCTION TABLE (EACH DRIVER) 8 v ririerd|p L | & ton state) H | H (off state) L | H (off state) H | H (off state} H = high fevel, L = low tevel schematic (each driver) electrical characteristics over recommended operating free SN55463... JG SN75463...JG ORP DUAL-IN-LINE PACKAGE (TOP VIEW) Vee 28 2A 1 1B GND positive logic: Y= A+B vec ako 1.6k2 ake W202 oY a 4 1ke 500 22 *-< GND h Resistor values shown are nominal. -air temperature range (unless otherwise noted) SN55463 SN75463 Nst UNIT PARAMETER TEST CONDITIONS MN TYPE MAX [MIN TYP? MAX Vin High-level input voltage 2 2 Vv Vit Low-level input voltage 0.8 08| V Vik Input clamp voltage Vec = MIN, ty = -12mA 1.2 -1.5 -1,2 15] V Voc = MIN, Vin=2V, igh- 00 100 A loH High-level output current VoH = 35 V 3 M Vec* Vit = O08, cc * MIN, 170 0.25 05 0.26 04 Voi Low-level output voltage lon = 100 mA Vv Voc = MIN, Vit 20.8 V, co=M iL 08 05 0.8 05 07 lo_ = 300 mA \ Input current at maximum input voltage Veco =MAX, Vv) =5.5V 1 +] mA lH High-level input current Veco = MAX, Vp =2.4V 40 40| uA fie Low-level input current Vec=MAX, Vv) 20.4V -1 -16 -1 -1.6| mA locH Supply current, outputs high Vec=MAX, Vi s5V 8 41 8 11] mA lect Supply current, outputs low Veco =MAX, Vv, =0 58 76 58 76; mA For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions. Tan typical values are at Voc = 5 V. Ta = 28C. switching characteristics, Vcc = 5 V, TA= 25C PARAMETER TEST CONDITIONS MIN TYP MAX | UNIT tpLH Propagation delay time, low-to-high-level output 30 55 ns tpHL Propagation delay time, high-to-low-leval output fo = 2O0mA, Cy. =15PF, 25 40 ns tTLH Transition time, low-to-high-level output Ry = 50 82, See Figure 3 8 2 ns tTHL Transition time, high-totow-evel output 10 25 ns Vs | 300 mA, Von High-level output voltage after switching cn round o* m Vg-10 mv 1180 TEXAS INSTRUMENTS INCORPORATED POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265TYPES SN55464, SN75464 DUAL PERIPHERAL POSITIVE-NOR DRIVERS logic FUNCTION TABLE (EACH DRIVER) B Y L | H {off state} H | L (on state) L | L (on state) H | L {on state) riIrr|> H = high level, L = low level schematic (each driver) ake =, SN55464 .. . JG SN75464 ...JG OR P DUAL-IN-LINE PACKAGE (TOP VIEW) vec 28 28 2 Ce elfs 1yy2ry3afy4 ww 1B OW GND Positive logic: Y = A+B Resistor vaiues shown are nominal. electrical characteristics over recommended operating free-air temperature range (unless otherwise noted) SN55464 SN75464 PARAMETER TEST CONDITIONSt UNIT MIN Typ? MAX |MIN TYP MAX Vi High-level input voltage 2 2 Vv Vit Low-level input voltage 0.8 08| Vv Vik tnput clamp voltage Vec = MIN, Wy) =-12mA 1.2 -1.5 1.2 -15] Vv . Veco = MIN, Vit =08V, 'oH High-level output current Von =25V 300 100 | KA Vec=MIN, = Vin = 2, 0.25 05 0.25 0.4 VoL Low-level output voltage lor = 100 ma v . Voc = MIN, ViH=2V, 05 08 05 0.7 loL = 300 mA \y snput current at maximum input voltage Voc = MAX, Vv) =55V 1 1] mA iH High-level input current Voc =MAX, V,=24V 40 40 | KA Ne Low-level input current Voc = MAX, Vv, =0.4V -1 -16 -1 -16 | mA 'CCH Supply current, outputs high Voc = MAX, V,=0V 14 19 14 19] mA loci Supply current, outputs low Voc = MAX, Vp=5V 67 85 67 85 | mA tFor conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions. All typical values are at Vec=5YV, Ta=25 C. switching characteristics, Vcc = 5 V, Ta = 25C PARAMETER TEST CONDITIONS MIN TYP MAX |UNIT tpLH Propagation delay time, low-to-high-level output 40 65 as tPHL Propagation delay time, high-to-low-level output Io ~ 200mA, CL =15 pF, 30 50 ns tTLH Transition time, low-to-high-level output RL = 500, See Figure 3 8 20 ns tTHL Transition time, high-to-low-level output 10 20 ns VOH High-levei output voltage after switching Vs = 30V, 'o ~ 300 ma, Vs10 mv See Figure 4 TEXAS INSTRUMENTS INCORPORATED POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 1180SERIES 55460/75460 DUAL PERIPHERAL DRIVERS PARAMETER MEASUREMENT INFORMATION INPUT 2.4 V Vcc OUTPUT 5V Ry = 40022 PULSE GENERATOR (See Note C) teLH -t++| fect PHL (See Note A) SUB I Vou CL = 15 pF (See Note B} OUTPUT Vou VOLTAGE WAVEFORMS TEST CIRCUIT NOTES: A. The pulse generator has the following characteristics: PRR = 14 MHz, Zour ~ 502. B. Cy include probe and jig capacitance. C. Ail diodes are 1N3064, FIGURE 1~PROPAGATION DELAY TIMES, EACH GATE (SN55460 AND SN75460 ONLY) INPUT ouTeuT PULSE GENERATOR (See Note Al CL = 16 pF 622 (See Note BY OUTPUT TEST CIRCUIT VOLTAGE WAVEFORMS NOTES: A. The pulse generator has the following characteristics: duty cycle < 1%, Zour 50 a. B. CL includes probe and jig capacitance. FIGURE 2SWITCHING TIMES, EACH TRANSISTOR (SN55460 AND SN75460 ONLY) 1276 TEXAS INSTRUMENTS INCORPORATED POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 87SERIES 55460/75460 DUAL PERIPHERAL DRIVERS PARAMETER MEASUREMENT INFORMATION INPUT =. 2.4 10V }NPUT "460 461 460 RL = 502 463 461 462 4 OUTPUT PULSE IT oe aa na oe TEST "462 (See NOTE B} CU + 15 pF T {See Note C} 464 1 GND SUB "463 | 464 OUTPUT e = < tb --- + i TEST CIRCUIT VOLTAGE WAVEFORMS NOTES: A. The pulse generator has the foliowing characteristics: PRR = 1 MHz, Zour * 50 2 B. When testing SN55460 or SN75460, connect output Y to transistor base and ground the substrate terminal. C. C_ inciudes probe and jig capacitance. FIGURE 3SWITCHING TIMES OF COMPLETE DRIVERS Vs =30V INPUT 2.4V Sv 2mH "260 1N3064 461 100 2 L 462 5 OUTPUT PULSE GENERATOR CIRCUIT (See Note A} UNDER TEST CL = 15 pF (See Note B) {See Note C] st T "463 GND iSUB Vou "464 | i OUTPUT o4Vv + t = FC VOL TEST CIRCUIT VOLTAGE WAVEFORMS NOTES: A. The pulse generator has the following characteristics: PAR = 12.5 kHz, Zout = 502. B. When testing SNS5460 or SN75460, connect output Y to transistor base with a 500-2 resistor from there to ground, and ground the substrate terminal. C. Cy, includes probe and jig capacitance. FIGURE 4LATCH-UP TEST OF COMPLETE DRIVERS 1276 88 TEXAS INSTRUMENTS INCORPORATED POST OFFICE BOX 225012 DALLAS, TEXAS 75265