SYMBOLS & CODES EXPLAINED j p 7 e 4 . { i a i ( i . . [A G n LINE TYPE [DEVICE Vp. BVdss (BVgss _| \ass Igss@ ND] COMMON SOURCE/ Rds | MAX. | IN STRUC|Y200 (EO No. No. [DISS @ | | Id Ig |Vgs=0O8 we pi Vgs /Vds gfs Yos Cis FREE |MAX|-TURE | s/a jAD @25C |ld=0 |Vds | Vds>Vp!& mhos. AIR [TEMP T0200/D E w) | (vy | ty) Vv} | tA) | A A Vv MAX ee C Ser. v- Matched Type, also listed in STRUCTURE Section 13, Category 6 A typical afg D ~ Diffused @ Phototransistor, also listed in Pulsed E Epitaxial tooe bonr ae ; % High Frequency (Yes) Ge GermaniumPE 5 (i- Yes PE Planar Epitaxial PL Planar eet tg: . # Junction Type A With infinite heat sink A_y - Y, * Insulated Gate (MOS Type) T Above 28C; For additional is 9 _ Matched pair or dual information, consult manufacturer. + Not at given test conditions A Switching, other uses % Maximum Zw Chopper, Other uses + * Pulsed D Noise figure 8db or below VgglCut off} mi fT = Plastic Package A. Vogt Threshold) Vv H Hometaxial % Typical % Maximum $ Tetrode # Mini A Not given at test conditions % Insulated Gate (MNOS Type} - imimum R [_# = Mini T Rosion) # Vps * A Depletion Mode, Type A $ Depletion-Enhancement Mode, Type B x Enhancement Mode, Type C a A - BYv T- sv bso DSX A pss @ Ves = Qand Vos Vp Ves 790 Minimum Typical Pulsed ON e+ P+ , (Output Shorted) Not given at test conditions Typical Cass Cag0 g-c igs JJunction $Storage AAmbient CCase A Phototransistor Device A Tetrode Device % Composite Type BYngo ! Lo mE al ks esaleain M wa Re aay alg we TYPE No. fT - 40 # g0c * 45C $ 100c # 50 D Free Air Zz 60C y Typical Vatue 75C A- > 100C Symbols indicate temperature at which derating starts. A Q With infinite heat sink Following symbols indicate temp W Power at which derating starts: Output f- 40% (- ec % gor * 45C ~- 70C A Pulsed #- 50% $$ - 100C %_ min * 0-65C A Ambient @ 70-80 C Case # 85-100C J Junction # 110-125C S Storage 130-135C ~ 140-165C 170-200C v Over 200C D - te . $ Minimum # Pulsed or Peak a T At temperature 25C Case D- 1, # Pulsed $ Minimum aE t sraucly indicated Maximum tyt % * Ton t, # ~ ts QD ~ AtVog < Max. Veg (see mfr. spec.) FT - ttt * Tote # Icex ky A - rs * = Ton * Toft 1 cer CEO) CES @ AtTemp. 25C Case Vv Typical Value # Pulsed $ Typical tT AtTemp. > 25C # Rated max. operating frequency f # BV __ or punch-through t <b x a Gain bandwidth product (ft) Q- BV ces * Pulsed A- 1 * Maximum frequency of oscillation g BV BVsoisus) B-1 Q Figure of merit (frequency for CER $ Minimum B unity power gain) op A Minimum Z- Maximum 7 At Temp. 25C Case fon a $ Minimum ~~ "fe * ~ Available to # Pulsed selected range $ ~ Tetrode Typical narrower than # Radiation Resistant Device (Also see top of reverse side of card.)IN ORDER OF (1) MIN. DERATING FACTOR TYPE | ceo |icbo @ fae | MAX.| tr EO No. SAT. -TURE | s/a jAD RES. TO200/D E 153-26t . : : 866m |3.0ud MT58 154-241 : : : : 833m |3.0ug MT58 15 : : : : 833m |3.0ud MT58 DTS105t : : : : : 180m |550n |DM |TO3 DTS108 : : : 150m |550n |DMA |T03_ [cg DTS3704B : : 0 |. 1.6 TO41 DTS3705B : : : 80 TO3 SDT2111 : : MT41a SDT2151 : : R121 2N1016C/M_ |1. * : : : : : MT1 151-241 : ; : : : : MTt 152-24t MT1 1776-04401 1. : ( TO63 A AMF227 : * . 5 . MT1 AMF227C : * : : : MT1 AMF2288 : : : MT1 AMF229A : : : : : MT1 BSC1015 : * : . : MT1 BSC 1016 : : : : : MT1 SDT2205 : f ; ; J MT23 SEC 1478 : : : : MT STC1015 : . ; . . : 2.5Mt MT1 STC1015C : : : ; 2.5Mt MTt STC1016 : : : : : 2.5Mt MT1 STC 1016C : : : : : 2.5Mt MT STC 1400 : : , . . : : 25Mt |1. MTt STX5/5010 : : 5.0 10Mt STX5/6025 : : : 5.0 10Mt 1561A603 : 120 @ . : : 3.0 800 5A |330m 2N1421 : 30 Z . 0B | 1.0 10M5A|3.0 L10B : 200 6.0 | 10 500k |.10 L20A : 200 : 6.0 | 20 500k |.10 L20D : 200 : 6.0 | 20 500k |.10 L30c : 200 : 6.0 | 30 500k ].10 $DT1908 : 140% es : 2. 50 340k5 $DT2008 : 140G les 2.0% | 50 340k SYMBOLS AND CODES 109 D.A.T.A. EXPLAINED IN INTERPRETER 109b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)114 TYPE No. 1401-1225 1401-1425 1441-0425 1441-0625 1441-1015 1441-1215 1441-1415 2N2340 ST610 2X2N3055 ASY82 288453 AC156 AC166 2N159 26524 AC168 26525 25C89H 28C89 261026 261027 SA70 2SA211 CK25A DTS 105 ASY87 2N800 28C35 2SA325 38c180 SDT7763 SDT7766 GT123 NKT 108 NKT129 fab 500kSA 500kSA SOOK5A 500k5A 500kK5A 5OOKSA 500K5A 550ktA 60M 1.0M 1.50M8 1.50M 1.80ME 2.00M5 2.00MA 2.00M 2.50MS 2.50M 3.00M 3.00M 3.00M 330M 4.00M8A 4.00M 4.00M 4.0M5A 4.00M5 4.0MA 4.50MSA 5.00M 5.00M 5.0M5A 5.0MSA 5.00MA 5.00M 5.00M 5.0ud 5000nd 5000ng 5000ne 5000nd 400n 1300n 2.0ut 3000nv 3300n 200n v 3000n v 2000n 400n 500n@t 550nt 800nv -4uyv 1.duyv 1000n 140n 400n 400ntD 400ntD 900n 2000n 2000n D.A.T.A. DELAY; STORE TIME | TIME td ts FALL TIME tf 10ud 10ud 10ud 10ud 10uG 10ud 10ud 1.2u 2.6u 2.5ut 200n 350nt 350nt 400n 1.0u 180n 600ntD 600ntD 750n 750n IN FREE AIR @ aoc m 625m 625 8B 350med 350m4+d 350me 350med 350m 10 BS 80 117 f * m 200m* * 250m 200m* * 200m* * 80m * 200m* * 71 Os 150m m 75m m 75m Veb le 40 |2 40 @ |250 | 10 4.0 % |100ug 4.0 Z |100ug 40 40 | 50ug 4.0 50ug 6.0 D |75 4.0 Z |3.0m | 10 25 35 120 114 225 0.0 225 20 @ 20 10% | 3 73 100 |: 95 3.0 @ 1.0m 20 30 [100m 120 1. 30 15% [509 1.0 1.0mA 0.0 {200m | 65 1.0 60 30 50% |50 8 5.0% [50d 1.0% | 10m } 90t 25mg) 120 80 hFE 10 # 20 A 85 A 120 A 204A 20 A 4 MAX. SAT. RES. 3.2 180m 2.0 12 100m 100m Cob 15p IN ORDER OF (1) fab, (2) MAX RISE TIME & r'bb X Cob 20p 20p SYMBOLS AND CODES EXPLAINED IN INTERPRETER STRUCTURE/M/MAX. ;Y200 A|TEMP| s/a P-PNP N-NPN T N-D $s N-D N-D N-D N-D N-D N-D N N-D N-D P-A P-A P-A EO AD T0200 |IDE MT 14a |C MT1t4a |C TO114 T0114 | 114 TO114 TO114 TO37 |Ad TO3 TO3 cp TO1 RO107a a 114