Agilent HCPL-817 Phototransistor Optocoupler High Density Mounting Type Data Sheet Description The HCPL-817 contains a light emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin DIP package and available in wide-lead spacing option and lead bend SMD option. Input-output isolation voltage is 5000 Vrms. Response time, tr, is typically 4 s and minimum CTR is 50% at input current of 5 mA. Functional Diagram PIN NO. AND INTERNAL CONNECTION DIAGRAM 4 3 Ordering Information Specify part number followed by Option Number (if desired). HCPL-817-XXXE Lead Free Option Number 000 = No Options 060 = IEC/EN/DIN EN 60747-5-2 Option W00 = 0.4" Lead Spacing Option 300 = Lead Bend SMD Option 500 = Tape and Reel Packaging Option 00A = Rank Mark A 00B = Rank Mark B 00C = Rank Mark C 00D = Rank Mark D 00L = Rank Mark L Schematic ANODE 1 1. ANODE 2. CATHODE 2 3. EMITTER 4. COLLECTOR 1 IF IC 4 + COLLECTOR Features * Current Transfer Ratio (CTR: min. 50% at IF = 5 mA, VCE = 5 V) * High input-output isolation voltage (Viso = 5000 Vrms) * Response time (tr: typ., 4 s at VCE = 2 V, IC = 2 mA, RL = 100 ) * Compact dual-in-line package * UL approved * CSA approved * IEC/EN/DIN EN 60747-5-2 approved * Options available: - Leads with 0.4" (10.16 mm) spacing (W00) - Leads bends for surface mounting (300) - Tape and reel for SMD (500) - IEC/EN/DIN EN 60747-5-2 approvals (060) Applications * Signal transmission between circuits of different potentials and impedances * I/O interfaces for computers * Feedback circuit in power supply VF CATHODE - 2 3 EMITTER CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. Package Outline Drawings HCPL-817-000E 7.62 0.3 (0.3) 4.6 0.5 (0.181) 3.5 0.5 (0.138) DATE CODE *1 LEAD FREE A 817 ANODE Y WW 6.5 0.5 (0.256) 0.5 TYP. (0.02) 3.3 0.5 (0.130) 2.8 0.5 (0.110) RANK *2 0.5 0.1 (0.02) DIMENSIONS IN MILLIMETERS AND (INCHES) 0.26 (0.010) 2.54 0.25 (0.1) 7.62 ~ 9.98 4.6 0.5 (0.181) 7.62 0.3 (0.3) HCPL-817-060E 3.5 0.5 (0.138) DATE CODE *1 A 817V LEAD FREE Y WW ANODE 6.5 0.5 (0.256) 0.5 TYP. (0.02) 3.3 0.5 (0.130) 2.8 0.5 (0.110) RANK *2 0.5 0.1 (0.02) DIMENSIONS IN MILLIMETERS AND (INCHES) 0.26 (0.010) 2.54 0.25 (0.1) 7.62 ~ 9.98 4.6 0.5 (0.181) 7.62 0.3 (0.3) HCPL-817-W00E 3.5 0.5 (0.138) DATE CODE *1 LEAD FREE A 817 ANODE Y WW 6.5 0.5 (0.256) 6.9 0.5 (0.272) 2.3 0.5 (0.09) 2.8 0.5 (0.110) RANK *2 0.5 0.1 (0.02) 2.54 0.25 (0.1) DIMENSIONS IN MILLIMETERS AND (INCHES) 2 0.26 (0.010) 10.16 0.5 (0.4) HCPL-817-300E 7.62 0.3 (0.3) 4.6 0.5 (0.181) 3.5 0.5 (0.138) DATE CODE *1 LEAD FREE A 817 ANODE Y WW 0.26 (0.010) 6.5 0.5 (0.256) 1.2 0.1 (0.047) 1.0 0.25 (0.039) 0.35 0.25 (0.014) 10.16 0.3 (0.4) 2.54 0.25 (0.1) RANK *2 DIMENSIONS IN MILLIMETERS AND (INCHES) 2) When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of (1) above. 30 seconds 250C Temperature (C) Solder Reflow Temperature Profile 1) One-time soldering reflow is recommended within the condition of temperature and time profile shown at right. 217C 200C 150C 60 sec 25C 60 ~ 150 sec 90 sec Time (sec) Absolute Maximum Ratings (TA = 25C) Storage Temperature, TS Operating Temperature, TA Lead Solder Temperature, max. (1.6 mm below seating plane) Average Forward Current, IF Reverse Input Voltage, VR Input Power Dissipation, PI Collector Current, IC Collector-Emitter Voltage, VCEO Emitter-Collector Voltage, VECO Collector Power Dissipation Total Power Dissipation Isolation Voltage, Viso (AC for 1 minute, R.H. = 40 ~ 60%) 3 260C (Peak Temperature) -55C to +125C -30C to +100C 260C for 10 s 50 mA 6V 70 mW 50 mA 35 V 6V 150 mW 200 mW 5000 Vrms 60 sec Electrical Specifications (TA = 25C) Parameter Forward Voltage Reverse Current Terminal Capacitance Symbol VF IR Ct Min. - - - Typ. 1.2 - 30 Max. 1.4 10 250 Units V A pF Test Conditions IF = 20 mA VR = 4 V V = 0, f = 1 KHz Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Current *Current Transfer Ratio Collector-Emitter Saturation Voltage Response Time (Rise) Response Time (Fall) Cut-off Frequency ICEO BVCEO BVECO IC CTR VCE(sat) tr tf fc - 35 6 2.5 50 - - - - - - - - - 0.1 4 3 80 100 - - 30 600 0.2 18 18 - nA V V mA % V s s KHz Isolation Resistance Riso 5 x 1010 1 x 1011 - Floating Capacitance Cf - 0.6 1.0 pF VCE = 20 V IC = 0.1 mA IE = 10 A IF = 5 mA, VCE = 5 V, RBE = IF = 20 mA, IC = 1 mA VCC = 2 V, IC = 2 mA RL = 100 VCC = 5 V, IC = 2 mA RL = 100 , -3 dB DC 500 V 40 ~ 60% R.H. V = 0, f = 1 MHz IC x 100% IF CTR (%) 50 ~ 100 80 ~ 160 130 ~ 260 200 ~ 400 300 ~ 600 Conditions IF = 5 mA, VCE = 5 V, TA = 25C IF - FORWARD CURRENT - mA 60 50 40 30 20 10 0 -30 0 25 50 75 100 125 TA - AMBIENT TEMPERATURE - C Figure 1. Forward current vs. temperature. 4 200 6 VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V Rank Mark L A B C D PC - COLLECTOR POWER DISSIPATION - mW * CTR = 150 100 50 0 -30 0 25 50 75 100 125 TA - AMBIENT TEMPERATURE - C Figure 2. Collector power dissipation vs. temperature. TA = 25C 5 IC = 0.5 mA IC = 1 mA 4 IC = 3 mA 3 IC = 6 mA IC = 7 mA 2 1 0 0 2 4 6 8 10 12 14 16 18 20 IF - FORWARD CURRENT - mA Figure 3. Collector-emitter saturation voltage vs. forward current. TA = 50C TA = 0C 100 TA = 25C TA = -25C 50 20 10 5 2 0.5 0 1.5 1.0 2.5 2.0 3.0 VCE = 5 V TA = 25C 160 140 120 100 80 60 40 20 0 VF - FORWARD VOLTAGE - V VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V RELATIVE CURRENT TRANSFER RATIO - % 100 50 0 -30 0 25 50 75 0.12 0.10 0.08 0.06 0.04 0.02 0 -25 100 50 tr 20 10 tf 5 td 2 1 ts 0.5 75 100 VCE = 2 V IC = 2 mA TA = 25C 0 10 RL = 10 k RL = 1 k RL = 100 20 0.05 0.1 0.2 0.5 1 2 5 10 RL - LOAD RESISTANCE - k Figure 10. Response time vs. load resistance. 5 50 Figure 8. Collector-emitter saturation voltage vs. temperature. VOLTAGE GAIN AV - dB RESPONSE TIME - s VCE = 2 V IC = 2 mA TA = 25C 25 TA - AMBIENT TEMPERATURE - C TA - AMBIENT TEMPERATURE - C Figure 7. Relative current transfer ratio vs. temperature. 0 0.5 1 2 5 10 20 50 100 200 500 f - FREQUENCY - kHz Figure 11. Frequency response. PC (MAX.) 30 IF = 20 mA IF = 10 mA 20 IF = 10 mA 10 IF = 5 mA 1 0 2 3 4 5 6 7 8 9 Figure 6. Collector current vs. collectoremitter voltage. IF = 20 mA IC = 1 mA 0.14 IF = 20 mA VCE - COLLECTOR-EMITTER VOLTAGE - V 0.16 IF = 5 mA VCE = 5 V 0.2 0.1 50 Figure 5. Current transfer ratio vs. forward current. 150 200 100 20 10 IF - FORWARD CURRENT - mA Figure 4. Forward current vs. forward voltage. 500 5 2 TA = 25C IF = 30 mA 40 0 1 ICEO - COLLECTOR DARK CURRENT - A 1 50 200 180 IC - COLLECTOR CURRENT - mA TA = 75C 200 CTR - CURRENT TRANSFER RATIO - % IF - FORWARD CURRENT - mA 500 10-5 VCE = 20 V 10-6 10-7 10-8 10-9 10-10 10-11 -25 0 25 50 75 100 TA - AMBIENT TEMPERATURE - C Figure 9. Collector dark current vs. temperature. Test Circuit for Response Time Test Circuit for Frequency Response VCC VCC RL RD RD INPUT OUTPUT OUTPUT ~ INPUT 10% OUTPUT 90% td ts tr tf www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6756 2394 India, Australia, New Zealand: (+65) 6755 1939 Japan: (+81 3) 3335-8152 (Domestic/International), or 0120-61-1280 (Domestic Only) Korea: (+65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) 6755 2044 Taiwan: (+65) 6755 1843 Data subject to change. Copyright (c) 2004 Agilent Technologies, Inc. Obsoletes 5989-0293EN October 27, 2004 5989-1734EN RL