Agilent HCPL-817
Phototransistor Optocoupler
High Density Mounting Type
Data Sheet
Features
• Current Transfer Ratio
(CTR: min. 50% at IF = 5 mA,
VCE = 5 V)
• High input-output isolation voltage
(Viso = 5000 Vrms)
• Response time (tr: typ., 4 µs at
VCE = 2 V, IC = 2 mA, RL = 100 Ω)
• Compact dual-in-line package
• UL approved
• CSA approved
• IEC/EN/DIN EN 60747-5-2
approved
• Options available:
– Leads with 0.4" (10.16 mm)
spacing (W00)
– Leads bends for surface
mounting (300)
– Tape and reel for SMD (500)
– IEC/EN/DIN EN 60747-5-2
approvals (060)
Applications
• Signal transmission between
circuits of different potentials and
impedances
• I/O interfaces for computers
• Feedback circuit in power supply
Description
The HCPL-817 contains a light
emitting diode optically coupled to
a phototransistor. It is packaged in
a 4-pin DIP package and available
in wide-lead spacing option and
lead bend SMD option. Input-output
isolation voltage is 5000 Vrms.
Response time, tr, is typically 4 µs
and minimum CTR is 50% at input
current of 5 mA.
Functional Diagram
Ordering Information
Specify part number followed by
Option Number (if desired).
HCPL-817-XXXE
Lead Free
Option Number
000 = No Options
060 = IEC/EN/DIN EN 60747-5-2
Option
W00 = 0.4" Lead Spacing Option
300 = Lead Bend SMD Option
500 = Tape and Reel Packaging
Option
00A = Rank Mark A
00B = Rank Mark B
00C = Rank Mark C
00D = Rank Mark D
00L = Rank Mark L
Schematic
4 3
12
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
1. ANODE
2. CATHODE 3. EMITTER
4. COLLECTOR
1
2
ANODE
CATHODE
V
F
+
–
I
F
4
3
COLLECTOR
EMITTER
I
C
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
2
Package Outline Drawings
HCPL-817-000E
HCPL-817-W00E
HCPL-817-060E
6.5 ± 0.5
(0.256)
DIMENSIONS IN MILLIMETERS AND (INCHES)
4.6 ± 0.5
(0.181)
2.54 ± 0.25
(0.1)
3.5 ± 0.5
(0.138)
7.62 ± 0.3
(0.3)
0.26
(0.010)
7.62 ~ 9.98
2.8 ± 0.5
(0.110) 3.3 ± 0.5
(0.130)
0.5 ± 0.1
(0.02)
0.5
(0.02)TYP.
A 817V
YWW
DATE CODE *1
RANK *2
LEAD FREE
ANODE
6.5 ± 0.5
(0.256)
DIMENSIONS IN MILLIMETERS AND (INCHES)
4.6 ± 0.5
(0.181)
2.54 ± 0.25
(0.1)
3.5 ± 0.5
(0.138)
7.62 ± 0.3
(0.3)
0.26
(0.010)
7.62 ~ 9.98
2.8 ± 0.5
(0.110) 3.3 ± 0.5
(0.130)
0.5 ± 0.1
(0.02)
0.5
(0.02)TYP.
A 817
YWW
DATE CODE *1
RANK *2
LEAD FREE
ANODE
6.5 ± 0.5
(0.256)
DIMENSIONS IN MILLIMETERS AND (INCHES)
4.6 ± 0.5
(0.181)
2.54 ± 0.25
(0.1)
3.5 ± 0.5
(0.138)
6.9 ± 0.5
(0.272)
7.62 ± 0.3
(0.3)
0.26
(0.010)
10.16 ± 0.5
(0.4)
2.8 ± 0.5
(0.110)
2.3 ± 0.5
(0.09)
0.5 ± 0.1
(0.02)
A 817
YWW
DATE CODE *1
RANK *2
LEAD FREE
ANODE
3
HCPL-817-300E
Solder Reflow Temperature Profile
1) One-time soldering reflow is
recommended within the
condition of temperature and
time profile shown at right.
2) When using another soldering
method such as infrared ray
lamp, the temperature may rise
partially in the mold of the
device. Keep the temperature on
the package of the device within
the condition of (1) above.
30 seconds
60 ~ 150 sec 90 sec 60 sec
60 sec
25°C
150°C
200°C
250°C260°C (Peak Temperature)
217°C
Time (sec)
Temperature (°C)
Absolute Maximum Ratings (TA = 25˚C)
Storage Temperature, TS–55˚C to +125˚C
Operating Temperature, TA–30˚C to +100˚C
Lead Solder Temperature, max. 260˚C for 10 s
(1.6 mm below seating plane)
Average Forward Current, IF50 mA
Reverse Input Voltage, VR6 V
Input Power Dissipation, PI70 mW
Collector Current, IC50 mA
Collector-Emitter Voltage, VCEO 35 V
Emitter-Collector Voltage, VECO 6 V
Collector Power Dissipation 150 mW
Total Power Dissipation 200 mW
Isolation Voltage, Viso (AC for 1 minute, R.H. = 40 ~ 60%) 5000 Vrms
6.5 ± 0.5
(0.256)
DIMENSIONS IN MILLIMETERS AND (INCHES)
4.6 ± 0.5
(0.181)
2.54 ± 0.25
(0.1)
3.5 ± 0.5
(0.138)
7.62 ± 0.3
(0.3)
0.26
(0.010)
10.16 ± 0.3
(0.4)
1.2 ± 0.1
(0.047) 0.35 ± 0.25
(0.014)
1.0 ± 0.25
(0.039)
A 817
YWW
DATE CODE *1
RANK *2
LEAD FREE
ANODE
4
Figure 1. Forward current vs. temperature. Figure 2. Collector power dissipation vs.
temperature.
Figure 3. Collector-emitter saturation voltage
vs. forward current.
IF – FORWARD CURRENT – mA
0
TA – AMBIENT TEMPERATURE – °C
75 125
50
25
10
40
0 50 100-30
60
30
20
P
C
– COLLECTOR POWER DISSIPATION – mW
0
T
A
– AMBIENT TEMPERATURE – °C
100
50
200
150
75 125250 50 100-30
0
I
F
– FORWARD CURRENT – mA
14 20
2
60
1
3
4
5
6
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
T
A
= 25°C
I
C
= 0.5 mA
I
C
= 1 mA
I
C
= 3 mA
I
C
= 6 mA
I
C
= 7 mA
24 81012 1618
* CTR = x 100%
IC
IF
Rank Mark CTR (%) Conditions
L 50 ~ 100 IF = 5 mA, VCE = 5 V, TA = 25°C
A 80 ~ 160
B 130 ~ 260
C 200 ~ 400
D 300 ~ 600
Electrical Specifications (TA = 25˚C)
Parameter Symbol Min. Typ. Max. Units Test Conditions
Forward Voltage VF–1.21.4VI
F = 20 mA
Reverse Current IR––10µAV
R = 4 V
Terminal Capacitance Ct– 30 250 pF V = 0, f = 1 KHz
Collector Dark Current ICEO – – 100 nA VCE = 20 V
Collector-Emitter Breakdown Voltage BVCEO 35––VI
C = 0.1 mA
Emitter-Collector Breakdown Voltage BVECO 6––VI
E = 10 µA
Collector Current IC2.5 – 30 mA IF = 5 mA, VCE = 5 V,
*Current Transfer Ratio CTR 50 – 600 % RBE = ∞
Collector-Emitter Saturation Voltage VCE(sat) –0.10.2VI
F = 20 mA, IC = 1 mA
Response Time (Rise) tr–418µsV
CC = 2 V, IC = 2 mA
Response Time (Fall) tf–318µsR
L = 100 Ω
Cut-off Frequency fc– 80 – KHz VCC = 5 V, IC = 2 mA
RL = 100 Ω, –3 dB
Isolation Resistance Riso 5 x 1010 1 x 1011 –ΩDC 500 V
40 ~ 60% R.H.
Floating Capacitance Cf– 0.6 1.0 pF V = 0, f = 1 MHz
5
Figure 4. Forward current vs. forward voltage. Figure 5. Current transfer ratio vs. forward
current.
Figure 6. Collector current vs. collector-
emitter voltage.
Figure 7. Relative current transfer ratio vs.
temperature.
Figure 8. Collector-emitter saturation
voltage vs. temperature.
Figure 9. Collector dark current vs.
temperature.
I
C
– COLLECTOR CURRENT – mA
0
V
CE
– COLLECTOR-EMITTER VOLTAGE – V
69
40
20
50
30
P
C
(MAX.)
T
A
= 25°C
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
30
10
I
F
= 20 mA
I
F
= 10 mA
12 45 78
RELATIVE CURRENT TRANSFER RATIO – %
0
100
50
150
V
CE
= 5 V
I
F
= 5 mA
T
A
– AMBIENT TEMPERATURE – °C
75250 50 100-30
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
0
0.10
0.02
0.16
I
C
= 1 mA
I
F
= 20 mA
T
A
– AMBIENT TEMPERATURE – °C
75250 50 100-25
0.04
0.06
0.08
0.12
0.14
I
CEO
– COLLECTOR DARK CURRENT – A
T
A
– AMBIENT TEMPERATURE – °C
V
CE
= 20 V
10-11
10-10
10-9
10-8
10-7
10-6
75250 50 100-25
10-5
I
F
– FORWARD CURRENT – mA
1
V
F
– FORWARD VOLTAGE – V
2.0 3.0
10
5
500
1.00
T
A
= 75°C
0.5 1.5 2.5
2
20
50
100
200 T
A
= 50°C
T
A
= 25°C
T
A
= 0°C
T
A
= -25°C
0
IF – FORWARD CURRENT – mA
10 50
40
200
21
20
60
120
140
160
CTR – CURRENT TRANSFER RATIO – %
VCE = 5 V
TA = 25°C
80
100
180
520
Figure 10. Response time vs. load resistance. Figure 11. Frequency response.
RESPONSE TIME – µs
0.1
R
L
– LOAD RESISTANCE – kΩ
0.1 5
1
0.5
0.2
0.5
500
0.2 2 100.05
2
V
CE
= 2 V
I
C
= 2 mA
T
A
= 25°C
tf
tr
1
5
10
20
50
100
200
ts
td
VOLTAGE GAIN AV – dB
f – FREQUENCY – kHz
1 20 5005
20
10
210500.5
0
100 200
R
L
= 10 kΩ
R
L
= 1 kΩ
R
L
= 100 Ω
V
CE
= 2 V
I
C
= 2 mA
T
A
= 25°C
Test Circuit for Response Time Test Circuit for Frequency Response
V
CC
R
D
R
L
OUTPUT
~
VCC
RD
INPUT
RL
OUTPUT
INPUT
OUTPUT 10%
90%
td
tr tf
ts
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
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Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5989-0293EN
October 27, 2004
5989-1734EN
