MCC95-18IO8B - Zilog - Datasheet.Directory

MCC95-18io8B

Phase leg

Thyristor Module

3 1 2

6 5

Part number

MCC95-18io8B

Backside: isolated

TAV

T

VV1.28

RRM

116

1800

=

V= V

I= A

2x

Features / Ad vantages: Applications: Package:

● Thyristor for line frequency

● Planar passivated chip

● Long-term stability

● Direct Copper Bonded Al2O3-ceramic

● Line rectifying 50/60 Hz

● Softstart AC motor control

● DC Motor control

● Power converter

● AC power control

● Lighting and temperature control

TO-240AA

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

● Isolation Voltage: V~

3600

IXYS reserves the right to change limits, conditions and dimensions. 20130605bData according to IEC 60747and per semiconductor unless otherwise specified

MCC95-18io8B

V = V

kA²s

Symbol Definition

Ratings

typ. max.

I

V

IA

V

T

1.29

R0.22 K/W

min.

116

VV

200T = 25°C

VJ

T = °C

VJ

mA5V = V

T = 25°C

VJ

I = A

T

V

T = °C

C

85

P

tot

455 WT = 25°C

C

150

1800

forward voltage drop

total power dissipation

Conditions Unit

1.50

T = 25°C

VJ

125

V

T0

V0.85T = °C

VJ

125

r

T

2.4 mΩ

V1.28T = °C

VJ

I = A

T

V

150

1.70

I = A300

threshold voltage

slope resistance for power loss calculation only

µA

125

VV1800T = 25°C

VJ

IA180

P

GM

Wt = 30 µs 10

max. gate power dissipation

P

T = °C

C

125

Wt = 5

P

GAV

W0.5

average gate power dissipation

C

J

119

j

unction capacitance V = V400 T = 25°Cf = 1 MHz

RVJ

pF

I

TSM

t = 10 ms; (50 Hz), sine T = 45°C

VJ

max. forward surge current

T = °C

VJ

125

I²t T = 45°C

value for fusing

T = °C125

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

thJC

thermal resistance junction to case

T = °C

VJ

125

2.25

2.43

18.3

17.7

kA

1.92

2.07

25.3

24.6

1800

300 µs

RMS forward current

T(RMS)

TAV

180° sine

average forward current

(di/dt)

cr

A/µs

150repetitive, I =T

VJ

= 125°C; f = 50 Hz

critical rate of rise of current

V

GT

gate trigger voltage V= 6 V T = °C25

(dv/dt) T=125°C

critical rate of rise of voltage

A/µs500

V/µs

t = µs;

IA;V = ⅔ V

R = ∞; method 1 (linear voltage rise)

VJ

DVJ

250 A

T

P

G

=0.45

di /dt A/µs;

G

=0.45

DDRM

cr

V = ⅔ V

D DRM

GK

1000

2.5 V

T= °C-40

VJ

I

GT

gate trigger current V= 6 V T = °C25

DVJ

150 mA

T= °C-40

VJ

2.6 V

200 mA

V

GD

gate non-trigger voltage T= °C

VJ

0.2 V

I

GD

gate non-trigger current 10 mA

V = ⅔ V

D DRM

125

latching current T= °C

VJ

450 mAI

L

25tµs

p

=10

IA;

G

= 0.45 di /dt A/µs

G

=0.45

holding current T= °C

VJ

200 mAI

H

25V= 6 V

D

R = ∞

GK

gate controlled delay tim e T= °C

VJ

2µst

gd

25

IA;

G

= 0.45 di /dt A/µs

G

=0.45

V = ½ V

D DRM

turn-off time T= °C

VJ

185 µst

q

di/dt = A/µs;10 dv/dt = V/µs;20

V =

R

100 V; I A;

T

= 150 V = ⅔ V

D DRM

tµs

p

= 200

non-repet., I = 116 A

T

125

R

thCH

thermal resistance case to heatsink K/W

Thyristor

1900

RRM/DRM

RSM/DSM

max. non-repetitive reverse/forward blocking voltage

max. re pe titive reverse/forward bl ocking volt a ge

R/D

reverse current, drain current

T

R/D

200

0.20

IXYS reserves the right to change limits, conditions and dimensions. 20130605bData according to IEC 60747and per semiconductor unless otherwise specified

MCC95-18io8B

Ratings

Package

T

VJ

°C

M

D

Nm4

mounting torque 2.5

T

stg

°C125

storage temperature -40

Weight g90

Symbol Definition typ. max.min.Conditions

virt ua l j un ctio n temp eratu re

Unit

M

T

Nm4

terminal torque 2.5

VV

t = 1 second

V

t = 1 minute

isolation voltage

mm

13.0 9.7

16.0 16.0

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current 200 A

per terminal

125-40

terminal to terminal

TO-240AA

Similar Part Package Voltage class

MCMA140P1800TA TO-240AA-1B 1800

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

MCC95-18io8B 454591Box 6MCC95-18io8BStandard

3000

3600

ISOL

threshold voltage V0.85

mΩ

V

0 max

R

0 max

slope resistance * 1.2

Equivalent Circuits for Simulation

T =

VJ

IV

0

R

0

Thyristor

125 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions. 20130605bData according to IEC 60747and per semiconductor unless otherwise specified

MCC95-18io8B

3 1 2

6 5

Outlines TO-240AA

IXYS reserves the right to change limits, conditions and dimensions. 20130605bData according to IEC 60747and per semiconductor unless otherwise specified

MCC95-18io8B

0 50 100

T

a

[°C]

T

C

[°C]

t[ms]

t[s]

0.001 0.01 0.1 1

500

1000

1500

2000

2500

23456789011

10

4

10

5

0 25 50 75 100 125 150

0

50

100

150

200

250

I

TSM

[A]

I

TAVM

[A]

0 50 100 150

0

50

100

150

200

250

P

tot

[W]

I

TAVM

,I

FAVM

[A]

0 50 100 1500 100 200 300

0

200

400

600

800

1000

I

2

t

[A

2

s]

T

VJ

=45°C

180° sin

120°

60°

30°

DC

T

VJ

=125°C

50 Hz

80% V

RRM

T

VJ

=45°C

T

VJ

=125°C

P

tot

[W]

I

dAVM

[A] T

a

[°C]

V

R

=0V

B6

Circuit

3x MCC95 or

3x MCD95

180° sin

120°

60°

30°

DC

R

thKA

K/W

0.4

0.6

0.8

1

1.2

1.5

2

3

0.01 0.1 1 10

0.1

1

10

100

0.01 0.1 1 10

0.1

1

10

100

I

G

[A]

V

G

[V]

I

G

[A]

T

VJ

=25°C

t

gd

[μs]

limit

typ.

125°C

25°C

t

p

=30µs

t

p

=500µs

P

GM

=120W

60 W

P

GAV

=8W

I

GT

(TVJ = -40°C)

I

GT

(TVJ =0°C

)

I

GT

(TVJ = 25°C)

I

GD

R

thKA

K/W

0.3

0.08

0.12

0.15

0.03

0.06

0.5

Fig. 1 Surge overload current I

TSM

,

I

FSM

: Crest value, t: duration

Fig. 2 I

2

t versus time (1-10 ms) Fig. 3 Max. forward current

at case temperature

Fig. 4 Power dissipation vs. on-state current & ambient temperature

(per thyristor or diode)

Fig. 5 Gate trigger characteristics

Fig. 6 Three phase rectifier bridge: Power dissipation vs. direct

output current and ambient temperature

Fig. 7 Gate trigger delay time

Thyristor

IXYS reserves the right to change limits, conditions and dimensions. 20130605bData according to IEC 60747and per semiconductor unless otherwise specified

MCC95-18io8B

0 50 100 150 200 250

0

200

400

600

800

1000

1200

t[s]

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

0.0

0.1

0.2

0.3

0.4

0.5

Z

thJC

[K/W]

I

RMS

[A]

P

tot

[W]

050100150

T

a

[°C]

10

-3

10

-2

10

-1

10

0

10

1

10

2

0.00

0.05

0.10

0.15

0.20

0.25

0.30

Z

thJK

[K/W]

t[s]

Circuit

W3

3x MCC95 or

3x MCD95

0.15

0.12

0.08

RthKA K/W

0.3

0.03

0.06

0.5

DC

180°

120°

60°

30°

Fig. 8 Three phase AC-controller: Power dissipation versus

RMS output current and ambient temperature

Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)

Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode)

DC

180°

120°

60°

30°

R

thJC

for various conduction angles d:

d R

thJC

[K/W]

DC 0.22

180° 0.23

120° 0.25

60° 0.27

30° 0.28

Constants for Z

thJC

calculation:

i R

thi

[K/W] t

i

[s]

1 0.0066 0.0019

2 0.0678 0.0477

3 0.1456 0.3440

R

thJC

for various conduction angles d:

d R

thJC

[K/W]

DC 0.42

180° 0.43

120° 0.45

60° 0.47

30° 0.48

Constants for Z

thJC

calculation:

i R

thi

[K/W] t

i

[s]

1 0.0066 0.0019

2 0.0678 0.0477

3 0.1456 0.3440

4 0.2000 1.3200

Thyristor

IXYS reserves the right to change limits, conditions and dimensions. 20130605bData according to IEC 60747and per semiconductor unless otherwise specified