3875081 GE SOLID STATE O1 DEG 3875081 ooLauyg 4 p37 37-4 Logic-Level Power MOSFETs RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L File Number 1514 . N-Channel Logic Level Power Field-Effect Transistors (L? FET) 12 A, 80 V and 100 V 6 fos(on): 0,5Q . Features; Design optimized for volt gate drive @ Can be driven directly from Q-MOS, N-MOS, TTL Cirevits @ Compatible with automotive drive requirements @ SOA Is power-dissipation limited m Nanosecond switching speeds S @ Linear transfer characteristics High input impedance = Majority carrier device N-CHANNEL ENHANCEMENT MODE 9ECESSM TERMINAL DESIGNATIONS DRAIN Ae Mcnzer SOUACE (FLANGED The RFM8N16L and RFM8N20L and the RFPSNi8L and RFPBN20L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic tevel (5 volt) driving sources in applications such as programmable controllers, automotive switching, and s2ce- $7893 solenold drivers. This pertormance is accomplished through . a special gate oxide design which provides full rated con- JEDEG TO-204AA i duction at gate biases in the 3-5 voit range, thereby facilitat- RFEPBNIEL Ing true on-off power control directly from logic circult REPBN20L supply voltages. source The RFM-series types are supplied in the JEDEC TO- f 204AA steel package and the RFP-series types in the ones J oon JEDEC TO-220A6 plastic package. O The RFM and RFP series were formerly RCA developmentat _ i care numbers TA9534 and TA9535. Tor view 828 -39870 JEDEC TO-220AB MAXIMUM RATINGS, Abso/ute-Maximum Values (Tc=25 CG}: RFMENTSL RFM8N20. RFPONISL RFPEN20L. DRAIN-SOURCE VOLTAGE ........... Voss 180 200 180 200 v DRAIN-GATE VOLTAGE (Ra=1 MM} .... Voor 180 200 180 200 v GATE-SOURCE VOLTAGE o Veg +10 __ Vv ORAIN CURRENT, RMS Continuous ...... lo ee eeSSSSSSSSSSSSFSe 8 A Pulsed co.cc seceee eee Dt 20 A POWER DISSIPATION @ Tc=25C .,..... Pe 7 75 60 60 Ww Derate above T-=25C 0.6 0.6 0.48 0.48 WAC OPERATING AND STORAGE TEMPERATURE ........-.--..-5-- Te Tag 5 tO 150 ct ~ 384 2 rigs yee RS atgbes Ans Geass fe Be - Wee ea*. me O1 pe Paazsoax OOV441 g loc 3875081 G & SOLID STATE UTE 18441 TH3B9=/| Logic-Level Power MOSFETs RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L 4 ELECTRICAL CHARACTERISTICS, Af Case Temperature (Tc)=25 C unless otherwise specified, , . LIMITS TEST RFM8N48L RFEM8N2OL CHARACTERISTIC SYMBOL | conDITIONS REPEN18L RFPeNZoL | UNITS MIN, MAX. MIN. MAX, Drain-Source Breakdown Voitage BVops Inv mA 180 _ 200 - Vv Gs= . Gate Threshold Voltage Vas(th) Vas*Vos 1 2 1 2 Vv lo=1 mA zero Gate Voltage Orain Current loss Vos= 145 V - V - - Vos=160 V _ = _ 1 To=125C HA Vos=145 V _ 50 ~ Vos=160 V = _ _- 50 Gate-Source Leakage Current lass Vos" 0 Vv - 100 - 100 nA os= , Drain-Source On Voltage Vps(on)* lo=4 A - 2.0 = 2.0 Vas=5 Vv 7 Ip=8 A _- 4.6 ~_ 4.6 Vas=5 V ' Static Draln-Source On Resistance fos(on)* In=4 A - 0.5 _ 0.5 2 Vas=5 V Forward Transconductance Qa" Vos=4 a v 3.0 _ 3.0 a mho foe . . Input Capacitance Cus Vos=25 V - 900 - 300 Output Capacitance Cos Vas=0'V = 250 = 250 pF Reverse-Transfer Capacitance Cas f=1MHz 100 100 Turn-On Delay Time ta{on) Voo=50 V 15(typ) 45 15(typ) 45 Rise Time t jo=4A 45(typ) | 150__| 45(typ) | 150 ns . Turn-Oft Delay Time ta(olf) Pee 6,25 Q 100(typ) |} 135 | 100(typ) | 135 - Fall Time tr Vas=5 V 60(typ) 105 __{ 60(typ) 105 he Thermal Resistance Roc RFMBN18L, _ 1.67 -" 1.67 F Junction-to-Case RFM8N20L . RFPEN18L, | 2003 | | 2oa3 | C/W RFP8N20L Pulsed: Pulse duration = 300 us max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS CHARACTERISTIC SYMBOL | conG TIONS Revongec REM eN2OL | UNITS . MIN, MAX. MIN. MAX. Diode Forward Voltage Vso Isn=4 A - 14 _ 1.4 Vv Reverse Recovery Time tee 4 A 260(typ) 250(typ) ns Gir/d,=100 A/us Pulse Test: Width S 300 ps, duty cycle = 2%, oo 3853875081 GE SOLID STATE Logic-Level Power MOSFETs ol pe Baa7soai OOLa44e2 & RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L a TURE (T, {CURVES MUST BE TED 6) LINEARLY WITH INCREASE 4 IN TEMPERA IS] tp (MAX) CONTINUOUS il REGION IS LiMiTED BY 2 4 6484 100 1000 DRAIN-TO-SOURCE VOLTAGE - (Vps)- Fig. 1 Maximum sa 30 100 CASE TEMPERATURE iTe ie 92C8=37504 Fig. 2 Power vs. temperature deraling curve for ail types. Toga SV JUNCTION TEMPERATURE Ty je *e 92CS- 37220 Fig. 4 Normalized drain-to-source on resistance to junction temperature for ail types. 386 92CM-37391A1 fe operating areas for all types. Vos *3V Lpttma JUNCTION TEMPERATURE (Ty )]-C s2cs-3720 Fig. 3 Typical normalized gate threshold voltage as a function of junction temperature for all types. . TEST SE DURATION CYCLE s2% fon) A e > 3 z < x 6 GATE~TO- SOURCE VOLTAGE (Vgg)-V 92C$-37221 Fig. 5 Typical transfer characteristics for all types,3875081 GE SOLID STATE Ol pe 3375081 0018443 oO TSE I| Logic-Level Power MOSFETs RFM8N18L, RFM8N20L, RFP8N18L, RFPENZOL oss : AL = 350 180 Ig INEF) = 0.45 mA 7 Vos? 5 Yoo = Yoss SATE Yoo = Yoss Vpg Voie g SOURCE b VOLTAGE 4* Vag Vous 0.73 Voss 975 Voss. 050 Vosg 0 50 Vpgs. O28 Voag 9.25 Voss 7? ORAIN ROUACE VOLTAGE ig (AEF) Ig (REF . 207 acy, iF {aCTy TIME = Microsecundes aacearess Fig. 6 - Normalized switching waveforms forconstant gate-current drive, PULSE OURATION = 8Q.9 DUTY CYCLE 2% Gog (on!) ons] ate oa o6 DRAIN-TO-SOURCE o 5 10 is 2a 23 30 ORAIN CURAENT (Ip]-A . 9205-37224 Fig. 8 Typical drain-to-souree on resistance as a function of drain current for all types. Vgg"t0 PULSE TEST PULSE DURATION*80ps DUTY CYCLE S$ 2% ORAIN CURRENT {Igl-a 92C8-37226 Fig. 10 Typical forward transconductance as a function of drain current for all types. PULSE TEST PULSE DURATION *G08 OUTY CYCLE s 2% x ORAIN CURRENT (IolA ORAIN=TO- SOURCE VOLTAGE (Vog !-V O269-37225 Fig. 7 Typical saturation characteristics for all types. (* MHz CAPACITANCE (C)pF ORAIN- TO~ SOURCE VOLTAGE (VYpglV S2C8- 57225 Fig. 9 Capacitance as a function of drain-to-souree voltage for ail types. 25a Yop 1o0oVv KELVIN CONTACT 9208-37355 Fig. 11 Switching Time Test Circuit. 387