© 2008 IXYS Corporation, All rights reserved
Features
•International standard package
•miniBLOC, with Aluminium nitride
isolation
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Avalanche rated
•Guaranteed FBSOA
•Low package inductance
•Fast intrinsic Rectifier
Advantages
•Easy to mount
•Space savings
•High power density
Applications
•DC-DC converters
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Temperature and lighting controls
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 100 V
VGS(th) VDS = VGS, ID = 8mA 2.0 4.0 V
IGSS VGS = ±20V, VDS = 0V ±200 nA
IDSS VDS = VDSS 100 μA
VGS = 0V TJ = 125°C 2 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 6.0 mΩ
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 100 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ100 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C, Chip capability 230 A
IL(RMS) External lead current limit 200 A
IDM TC= 25°C, pulse width limited by TJM 920 A
IATC= 25°C 100 A
EAS TC= 25°C4J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PdTC= 25°C 700 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS t = 1min 2500 V~
IISOL ≤ 1mA t = 1s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.3/11.5 Nm/lb.in.
Weight 30 g
Power MOSFET
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
DS98548F(12/08)
S
G
S
D
miniBLOC, SOT-227 B
E153432
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
IXFN230N10 VDSS = 100V
ID25 = 230A
RDS(on) ≤≤
≤≤
≤ 6.0mΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN230N10
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 60 97 S
Ciss 19 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 5600 pF
Crss 2750 pF
td(on) 40 ns
tr 150 ns
td(off) 112 ns
tf 60 ns
Qg(on) 570 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 70 nC
Qgd 290 nC
RthJC 0.18 °C/W
RthCS 0.05 °C/W
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 230 A
ISM Repetitive, pulse width limited by TJM 920 A
VSD IF = 100A, VGS = 0V, Note 1 1.2 V
trr 250 ns
QRM 1.2 μC
IRM 9.0 A
IF = 50A, -di/dt = 100A/μs, VR = 50V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Source-Drain Diode
© 2008 IXYS Corporation, All rights reserved
IXFN230N10
IXYS REF: F_230N10(9Y-N17)12-02-08-D
Fi g . 1. Ou tp u t C h ar acter i stic s
@ 25º C
0
40
80
120
160
200
240
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
DS
- Volts
I
D
- A mpe re s
V
GS
= 10V
9V
8V
7V
6V
5V
Fi g . 2. Exten ded Ou tp u t C h ar acter isti cs
@ 25º C
0
50
100
150
200
250
300
350
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
DS
- Volts
I
D
- A mpe re s
V
GS
= 10V
9V
8V
7V
5V
6V
Fi g . 3. Outp u t C h a r acter istic s
@ 125ºC
0
40
80
120
160
200
240
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V
DS
- Volts
I
D
- A mpe re s
V
GS
= 10V
9V
8V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 115A Value
vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N ormali zed
V
GS
= 10V
I
D
= 230A
I
D
= 115A
Fig. 5. R
DS(on)
Normalized to I
D
= 115A Value
vs.Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 50 100 150 200 250 300 350
I
D
- Amp eres
R
DS(on)
- N orma lized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temper atur e
0
20
40
60
80
100
120
140
160
180
200
220
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Cen tigrad e
I
D
- Am peres
Ext ernal Lead Cur r ent Limit
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN230N10
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
GS
- Volts
I
D
- A m peres
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140 160 180 200
I
D
- Ampe res
g
f s
- S iemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
In tr i n sic D i o d e
0
30
60
90
120
150
180
210
240
270
300
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- V olt s
I
S
- A m peres
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 50 100 150 200 250 300 350 400 450 500 550 600
Q
G
- NanoCou lombs
V
GS
- V o lts
V
DS
= 50V
I
D
= 100A
I
G
= 10mA
Fig. 11. Capacitance
1
10
100
0 5 10 15 20 25 30 35 40
V
DS
- V olt s
Capa citance - Nano Farad
s
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximu m Tran si en t Th er mal
Impedance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2008 IXYS Corporation, All rights reserved IXYS REF: F_230N10(9Y-N17)12-02-08-D
IXFN230N10
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
1
10
100
1,000
1 10 100
V
DS
- V olt s
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
1ms
100µs
R
DS(on)
Limit
10ms
DC
Ext er nal-Lead Limit
100ms
Fi g . 14. Fo r war d -B i as Sa fe Op er ati ng Area
@ T
C
= 75ºC
1
10
100
1,000
1 10 100
V
DS
- V olt s
I
D
- Am per es
T
J
= 150ºC
T
C
= 75ºC
Single Pulse
1ms
100µs
R
DS(on)
Limit
10ms
DC
100ms
25µs
