5-75
1
GATE 3
DRAIN
2 SOURCE
4 SOURCE
360
ATF-36077
2–18 GHz Ultra Low Noise
Pseudomorphic HEMT
Technical Data
Features
• PHEMT Technology
• Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
• High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Parasitic Ceramic
Microstrip Package
• Tape-and-Reel Packing
Option Available
Applications
• 12 GHz DBS LNB (Low Noise
Block)
• 4 GHz TVRO LNB (Low Noise
Block)
• Ultra-Sensitive Low Noise
Amplifiers
Figure 1. ATF-36077 Optimum Noise
Figure and Associated Gain vs.
Frequency for VDS = 1.5 V, ID = 10 mA.
Pin Configuration
77 Package
NOISE FIGURE (dB)
0
0
FREQUENCY (GHz)
81620
1.2
0.8
0.4
412
Ga
ASSOCIATED GAIN (dB)
NF
10
15
20
25
[1]
Note: 1. See Noise Parameter Table.
Description
Hewlett-Packard’s ATF-36077 is
an ultra-low-noise Pseudomorphic
High Electron Mobility Transistor
(PHEMT), packaged in a low
parasitic, surface-mountable
ceramic package. Properly
matched, this transistor will
provide typical 12 GHz noise
figures of 0.5 dB, or typical 4 GHz
noise figures of 0.3 dB. Addition-
ally, the ATF-36077 has very low
noise resistance, reducing the
sensitivity of noise performance
to variations in input impedance
match, making the design of
broadband low noise amplifiers
much easier. The premium
sensitivity of the ATF-36077
makes this device the ideal choice
for use in the first stage of
extremely low noise cascades. The repeatable performance and
consistency make it appropriate
for use in Ku-band Direct Broad-
cast Satellite (DBS) Television
systems, C-band Television
Receive Only (TVRO) LNAs, or
other low noise amplifiers
operating in the 2-18␣ GHz
frequency range.
This GaAs PHEMT device has a
nominal 0.2 micron gate length
with a total gate periphery (width)
of 200 microns. Proven gold based
metalization systems and nitride
passivation assure rugged, reliable
devices.
5965-8726E
5-76
ATF-36077 Electrical Specifications,
TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF Noise Figure[1] f = 12.0 GHz dB 0.5 0.6
GAGain at NF[1] f = 12.0 GHz dB 11.0 12.0
gmTransconductance VDS = 1.5 V, V
GS = 0 V mS 50 55
Idss Saturated Drain Current VDS = 1.5 V, V
GS = 0 V mA 15 25 45
V
p 10 % Pinch-off Voltage VDS = 1.5 V, IDS = 10% of Idss V -1.0 -0.35 -0.15
Note:
1. Measured in a fixed tuned environment with Γ source = 0.54 at 156°; Γ load = 0.48 at 167°.
Thermal Resistance[2,3]:
θch-c = 60°C/W
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Measured at Pdiss = 15 mW and
Tch = 100°C.
3. Derate at 16.7 mW/°C for TC > 139°C.
ATF-36077 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum[1]
VDS Drain – Source Voltage V +3
V
GS Gate – Source Voltage V -3
VGD Gate-Drain Voltage V -3.5
IDDrain Current mA Idss
PTTotal Power Dissipation[3] mW 180
Pin max RF Input Power dBm +10
Tch Channel Temperature °C 150
TSTG Storage Temperature °C -65 to 150
ATF-36077 Characterization Information,
TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol Parameters and Test Conditions Units Typ.
NF Noise Figure (Tuned Circuit) f = 4 GHz dB 0.3[2]
f = 12 GHz dB 0.5
GAGain at Noise Figure (Tuned Circuit) f = 4 GHz dB 17
f = 12 GHz dB 12
S12 off Reverse Isolation f = 12 GHz, VDS = 1.5 V, V
GS = -2 V dB 14
P1dB Output Power at 1 dB Gain Compression f = 4 GHz dBm 5
f = 12 GHz dBm 5
VGS 10 mA Gate to Source Voltage for IDS = 10 mA VDS = 1.5 V V -0.2
Note:
2. See noise parameter table.
5-77
ATF-36077 Typical Scattering Parameters,
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
1.0 0.99 -17 14.00 5.010 163 -36.08 0.016 78 0.60 -14
2.0 0.97 -33 13.81 4.904 147 -30.33 0.030 66 0.59 -28
3.0 0.94 -49 13.53 4.745 132 -27.25 0.043 54 0.57 -41
4.0 0.90 -65 13.17 4.556 116 -25.32 0.054 43 0.55 -54
5.0 0.86 -79 12.78 4.357 102 -24.04 0.063 33 0.53 -66
6.0 0.82 -93 12.39 4.162 88 -23.17 0.069 24 0.50 -78
7.0 0.78 -107 12.00 3.981 75 -22.58 0.074 16 0.48 -89
8.0 0.75 -120 11.64 3.820 62 -22.17 0.078 8 0.46 -99
9.0 0.72 -133 11.32 3.682 49 -21.90 0.080 1 0.44 -109
10.0 0.69 -146 11.04 3.566 37 -21.71 0.082 -6 0.42 -119
11.0 0.66 -159 10.81 3.473 25 -21.57 0.083 -13 0.40 -129
12.0 0.63 -172 10.63 3.401 13 -21.44 0.085 -19 0.38 -139
13.0 0.61 175 10.50 3.349 1 -21.32 0.086 -25 0.37 -149
14.0 0.60 161 10.41 3.315 -12 -21.19 0.087 -32 0.35 -160
15.0 0.58 147 10.36 3.296 -24 -21.04 0.089 -39 0.33 -171
16.0 0.57 131 10.34 3.289 -37 -20.87 0.091 -47 0.31 177
17.0 0.56 114 10.34 3.289 -50 -20.69 0.092 -55 0.29 164
18.0 0.57 97 10.35 3.291 -64 -20.53 0.094 -65 0.26 148
ATF-36077 Typical “Off” Scattering Parameters,
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 0 mA, V
GS = -2 V
Freq. S11 S21 S21 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
11.0 0.96 -139 -14.2 0.19 -43 -14.2 0.19 -43 0.97 -125
12.0 0.95 -152 -14.0 0.20 -56 -14.0 0.20 -56 0.97 -137
13.0 0.94 -166 -13.8 0.20 -69 -13.8 0.20 -68 0.96 -149
5-78
ATF-36077 Typical Noise Parameters,
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA
Freq. Fmin[1] Γopt Rn/Zo
GHz dB Mag. Ang. -
1 0.30 0.95 12 0.40
2 0.30 0.90 25 0.20
4 0.30 0.81 51 0.17
6 0.30 0.73 76 0.13
8 0.37 0.66 102 0.09
10 0.44 0.60 129 0.05
12 0.50 0.54 156 0.03
14 0.56 0.48 -174 0.02
16 0.61 0.43 -139 0.05
18 0.65 0.39 -100 0.09
Note:
1. The Fmin values at 2,4, and 6 GHz have been adjusted to reflect expected circuit losses
that will be encountered when matching to the optimum reflection coefficient (Γopt) at
these frequencies. The theoretical Fmin values for these frequencies are: 0.10 dB at
2␣ GHz, 0.20 dB at 4 GHz, and 0.29 dB at 6 GHz. Noise parameters are derived from
associated s parameters, packaged device measurements at 12 GHz, and die level
measurements from 6 to 18 GHz.
Part Number Ordering Information
Part Number No. of Devices Container
ATF-36077-TRl[2] 1000 7" Reel
ATF-36077-STR 10 strip
Note:
2. For more information, see “Tape and Reel Packaging for Semiconductor Devices,” in
“Communications Components” Designer‘s Catalog.
77 Package Dimensions
Figure 2. Maximum Available Gain,
Maximum Stable Gain and Insertion
Power Gain vs. Frequency. VDS = 1.5 V,
ID = 10 mA.
GAIN (dB)
0
25
0
FREQUENCY (GHz)
81620
20
15
10
5
412
S21
MSG MAG
1.02
(0.040)
.51
(0.020)
1.78
(0.070)
1.22
(0.048)
.53
(0.021)
5.28
(0.208) .10
(0.004)
TYPICAL DIMENSIONS ARE IN MILLIMETERS (INCHES).
4
2
13
GATE DRAIN
SOURCE
SOURCE
1.75
(0.069)
360
