Philips Semiconductors Product specification OI General purpose diodes BAS19; BAS20; BAS21 eee ee ee eee ee eee FEATURES MARKING PINNING Small plastic SMD package ; P Pp 9 TYPE NUMBER MARKING PIN DESCRIPTION Switching speed: max. 50 ns CODE 1 anode e General application BAS19 JPp 2 not connected Continuous reverse voltage: BAS20 JRp 3 cathode max. 100; 150; 200 V BAS?1 JSp e Repetitive peak reverse voltage: max. 120; 200; 250 V e Repetitive peak forward current: max. 625 mA. 2 APPLICATIONS e General purpose switching in e.g. 2 1 surface mounted circuits. 3 DESCRIPTION | mauies The BAS19, BAS20, BAS21 are general purpose diodes fabricated in planar technology, and encapsulated in small plastic SMD SOT23 packages. 1996 Sep 10 Fig.1 Simplified outline (SOT23) and symbol. 1-108Philips Semiconductors Product specification General purpose diodes BAS19; BAS20; BAS21 LIMITING VALUES in accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL| s-- PARAMETER CONDITIONS MIN. | MAX. | UNIT Vrrm _| repetitive peak reverse voltage BAS19 - 120 Vv BAS20 - 200 Vv BAS21 - 250 Vv Vea continuous reverse voltage BAS19 . - 100 [Vv BAS20 ~ 150 Vv BAS21 - 200 Vv Ie continuous forward current see Fig.2; note 1 - 200 mA lenm repetitive peak forward current - 625 mA lrsm non-repetitive.peak forward current | square wave; Tj = 25 C prior to surge; see Fig.4 t=1ps - 9 |A t= 100us - 3 {A t=10ms ~ 1.7 1A Prot total power dissipation Tamb = 25 C; note 1 - 250 | mW T. storage temperature -65 +150 | C F junction temperature - 150 1C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10 1-109Phitips Semiconductors Product specification General purpose diodes BAS19; BAS20; BAS21 ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. |: UNIT Ve forward voltage see Fig.3 Ip = 100 mA 10 |V lz = 200 mA 1.25 |V tr reverse current see Fig.5 BAS19 VR =100V 100 nA Vr = 100 V; Tj = 150 C 100 HA BAS20 VR = 150V 100 nA Vp = 150 V; Tj) = 150 C 700 HA BAS21 Va =200V 100 nA Vr = 200 V; Tj = 150 C 100 HA Cy diode capacitance f= 1 MHz; Ve =.0; see Fig.6 5 pF ter reverse recovery time when switched from i = 30 mA to 50 ns In = 30 mA; Ry = 100 Q; measured at I; = 3 mA; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS | VALUE UNIT Rin j-tp thermal resistance from junction to tie-point | 330 KAW Rtn j-a thermal resistance from junction to ambient | note 1 500 K/W Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10 1-110Phitips Semiconductors Product specification General purpose diodes BAS19; BAS20; BAS21 GRAPHICAL DATA 300 WeGHE 600 Ip ip (mA) (mA) 200 0 100 Tay, (@C) 200 Device mounted on an FR4 printed-circuit board. Fig.2. Maximum permissible continuous forward current as a function of ambient temperature. 400 200 oO 1 Ve) 2 (1) T= 150 C; typical values. (2) Tj = 25 C; typical values. (3) T, = 25 C; maximum values. Fig.3 Forward current as a function of forward voitage. 'Fsm (A) 10 10-7 1 10 Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. MBG703 1996 Sep 10Philips Semiconductors Product specification General purpose diodes BAS19; BAS20; BAS21 0 100 T, 0) 200 (1) Va = Vamaxi maximum values. (2) Va = Vamax: typical values. Fig.5 Reverse current as a function of junction temperature. 1,0 (pF) 0.8 0.6 0.4 0.2 Va f= 1 MHz; T, = 25C. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 200 0 100 Tamb (C) (1) BAS21. (2) BAS20. (3) BASt9. Fig.7 Maximum permissible continuous reverse voltage as a function of the ambient temperature. 1996 Sep 10 1-112Philips Semiconductors Product specification = General purpose diodes BAS19; BAS20; BAS21 PO 7 { 5 m~ tr tp _ a T t | 10% | r Rg= 500 L _j | SAMPLING F tn LJ sacs OSCILLOSCOPE : Ve VptipxAg R,=509 fs l | va 90% ) input signal output signal (1) In=3mA. Fig.8 Reverse recovery voltage test circuit and waveforms. 1996 Sep 10 1-113