© Semiconductor Components Industries, LLC, 2005
October, 2018 − Rev. 6
1Publication Order Number:
MOCD217M/D
MOCD207M, MOCD208M,
MOCD211M, MOCD213M,
MOCD217M
8-pin SOIC Dual-Channel
Phototransistor Output
Optocoupler
These devices consist of two gallium arsenide infrared emitting
diodes optically coupled to two monolithic silicon phototransistor
detectors, in a surface mountable, small outline, plastic package. They
are ideally suited for high−density applications, and eliminate the need
for through−the−board mounting.
Features
•Closely Matched Current Transfer Ratios
•Minimum BVCEO of 70 V Guaranteed
– MOCD207M, MOCD208M, MOCD213M
•Minimum BVCEO of 30 V Guaranteed
– MOCD211M, MOCD217M
•Low LED Input Current Required for Easier Logic Interfacing
– MOCD217M
•Convenient Plastic SOIC−8 Surface Mountable Package Style, with
0.050″ Lead Spacing
•Safety and Regulatory Approvals:
– UL1577, 2,500 VACRMS for 1 Minute
– DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage
•These are Pb−Free Devices
Applications
•Feedback Control Circuits
•Interfacing and Coupling Systems of Different Potentials and
Impedances
•General Purpose Switching Circuits
•Monitor and Detection Circuits
EMITTER 1
COLLECTOR 1ANODE 1
CATHODE 1
1
2
3
45
6
7
8
EMITTER 2
COLLECTOR 2
ANODE 2
CATHODE 2
Figure 1. Schematic
SOIC8
M SUFFIX
CASE 751DZ
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See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
1
6
43 5
SYYX
2
D207
MARKING DIAGRAM
1 − Logo
2 − Device Number
3 − DIN EN/IEC60747−5−5 Option (only appears
on component ordered with this option)
4 − One−Digit Year Code, e.g., “4”
5 − Digit Work Week, Ranging from “01” to “53”
6 − Assembly Package Code
V
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M
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2
Safety and Insulation Ratings
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated
Mains Voltage
< 150 VRMS I−IV
< 300 VRMS I−III
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
904 Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1060 Vpeak
VIORM Maximum Working Insulation Voltage 565 Vpeak
VIOTM Highest Allowable Over−Voltage 4000 Vpeak
External Creepage ≥4 mm
External Clearance ≥4 mm
DTI Distance Through Insulation (Insulation Thickness) ≥0.4 mm
TSCase Temperature (Note 1) 150 °C
IS,INPUT Input Current (Note 1) 200 mA
PS,OUTPUT Output Current (Note 1) 300 mW
RIO Insulation Resistance at TS, VIO = 500 V (Note 1) >109W
1. Safety limit values – maximum values allowed in the event of a failure.
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M
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3
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol Rating Value Unit
TOTAL DEVICE
TSTG Storage Temperature −40 to +125 °C
TAAmbient Operating Temperature −40 to +100 °C
TJJunction Temperature −40 to +125 °C
TSOL Lead Solder Temperature 260 for 10 seconds °C
PDTotal Device Power Dissipation @ TA = 25°C 240 mW
Derate Above 25°C 2.94 mW/°C
EMITTER
IFContinuous Forward Current 60 mA
IF (pk) Forward Current – Peak (PW = 100 ms, 120 pps) 1.0 A
VRReverse Voltage 6.0 V
PDLED Power Dissipation @ TA = 25°C 90 mW
Derate Above 25°C 0.8 mW/°C
DETECTOR
ICContinuous Collector Current 150 mA
VCEO Collector−Emitter Voltage
− MOCD207M, MOCD208M, MOCD213M
70 V
− MOCD211M, MOCD217M 30 V
VECO Emitter−Collector Voltage 7 V
PDDetector Power Dissipation @ TA = 25°C 150 mW
Derate Above 25°C 1.76 mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M
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4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Device Test Conditions Min Typ Max Unit
EMITTER
VFInput Forward Voltage MOCD217M IF = 1 mA −1.05 1.3 V
MOCD213M IF = 10 mA −1.15 1.5 V
MOCD207M,
MOCD208M,
MOCD211M
IF = 30 mA −1.25 1.5 V
IRReverse Leakage Current All VR = 6 V −0.001 100 mA
CIN Input Capacitance All −18 −pF
DETECTOR
ICEO Collector−Emitter Dark Current All VCE = 10 V, TA = 25°C−1.0 50 nA
VCE = 10 V, TA = 100°C−1.0 −mA
BVCEO Collector−Emitter Breakdown
Voltage
MOCD211M,
MOCD217M
IC = 100 mA30 100 −V
MOCD207M,
MOCD208M,
MOCD213M
IC = 100 mA70 100 −V
BVECO Emitter−Collector Breakdown
Voltage
All IE = 100 mA7 10 −V
CCE Collector−Emitter Capacitance All f = 1.0 MHz, VCE = 0 −7−pF
COUPLED
CTR Collector−Output Current MOCD207M IF = 10 mA, VCE = 5 V 100 −200 %
MOCD208M IF = 10 mA, VCE = 5 V 40 −125 %
MOCD211M IF = 10 mA, VCE = 5 V 20 − − %
MOCD213M IF = 10 mA, VCE = 5 V 100 − − %
MOCD217M IF = 1 mA, VCE = 5 V 100 − − %
VCE(SAT) Collector−Emitter Saturation
Voltage
MOCD207M,
MOCD208M,
MOCD211M,
MOCD213M
IC = 2 mA, IF = 10 mA − − 0.4 V
MOCD217M IC = 100 mA, IF = 1 mA − − 0.4 V
ton Turn−On Time All IC = 2 mA, VCC = 10 V,
RL = 100 W (Figure 7)
−7.5 −ms
toff Turn−Off Time All IC = 2 mA, VCC = 10 V,
RL = 100 W (Figure 7)
−5.7 −ms
trRise Time All IC = 2 mA, VCC = 10 V,
RL = 100 W (Figure 7)
−3.2 −ms
tfFall Time All IC = 2 mA, VCC = 10 V,
RL = 100 W (Figure 7)
−4.7 −ms
ISOLATION
VISO Input−Output Isolation Voltage All t = 1 Minute 2500 − − VACRMS
CISO Isolation Capacitance All VI−O = 0 V, f = 1 MHz −0.2 −pF
RISO Isolation Resistance All VI−O = ±500 VDC, TA = 25°C 1011 − − W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M
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5
TYPICAL CHARACTERISTICS
Figure 2. LED Forward Voltage vs. Forward
Current
Figure 3. Output Current vs. Input Current
Figure 4. Output Current vs. Ambient
Temperature
Figure 5. Output Current vs. Collector−Emitter
Voltage
Figure 6. Dark Current vs. Ambient
Temperature
IF – LED INPUT CURRENT (mA)
0.1 1 10 100
IC – OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.01
0.1
1
10
VCE = 5 V
NORMALIZED TO I F = 10 mA
TA – AMBIENT TEMPERATURE (_C)
−80 −60 −40 −20 0 20 40 60 80 100 120
IC – OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.1
1
10
NORMALIZED TO T
A = 25_C
VCE – COLLECTOR−EMITTER VOLTAGE (V)
0
IC – OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IF = 10 mA
NORMALIZED TO VCE = 5 V
TA – AMBIENT TEMPERATURE ( _C)
0 20406080100
ICEO – COLLECTOR −EMITTER DARK CURRENT (nA)
0.1
1
10
100
1000
10000
VCE = 10 V
IF – LED FORWARD CURRENT (mA)
VF – FORWARD VOLTAGE (V)
110100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = –55_C
TA = 25
_C
TA = 100_C
1 234 567 8910
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M
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6
SWITCHING TIME TEST CIRCUIT AND WAVEFORMS
Figure 7. Switching Time Test Circuit and Waveforms
OUTPUT PULSE
INPUT PULSE
trtf
INPUT
IFRL
RBE
VCC = 10 V
OUTPUT
ton
10%
90%
toff
IC
Adjust IF to produce IC = 2 mA
REFLOW PROFILE
Figure 8. Reflow Profile
Time (seconds)
Temperature (_C)
Time 25°C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
TL
ts
tL
tP
TP
Tsmax
Tsmin
120
Preheat Area
Max. Ramp−up Rate = 3°C/S
Max. Ramp−down Rate = 6°C/S
240 360
Profile Feature Pb−Free Assembly Profile
Temperature Minimum (Tsmin) 150°C
Temperature Maximum (Tsmax) 200°C
Time (tS) from (Tsmin to Tsmax) 60 − 120 seconds
Ramp−up Rate (tL to tP) 3°C/second maximum
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL)60 − 150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (tP) within 5°C of 260°C30 seconds
Ramp−down Rate (TP to TL) 6°C/second maximum
Time 25°C to Peak Temperature 8 minutes maximum
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M
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7
ORDERING INFORMATION
Part Number Package Shipping
MOCD207M Small Outline 8−Pin 100 Units / Tube
MOCD207R2M Small Outline 8−Pin 2500 Units / Tape & Reel
MOCD207VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube
MOCD207R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel
MOCD208M Small Outline 8−Pin 100 Units / Tube
MOCD208R2M Small Outline 8−Pin 2500 Units / Tape & Reel
MOCD208VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube
MOCD208R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel
MOCD211M Small Outline 8−Pin 100 Units / Tube
MOCD211R2M Small Outline 8−Pin 2500 Units / Tape & Reel
MOCD211VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube
MOCD211R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel
MOCD213M Small Outline 8−Pin 100 Units / Tube
MOCD213R2M Small Outline 8−Pin 2500 Units / Tape & Reel
MOCD213VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube
MOCD213R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel
MOCD217M Small Outline 8−Pin 100 Units / Tube
MOCD217R2M Small Outline 8−Pin 2500 Units / Tape & Reel
MOCD217VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube
MOCD217R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M
www.onsemi.com
8
PACKAGE DIMENSIONS
SOIC8
CASE 751DZ
ISSUE O
MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M
www.onsemi.com
9
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