TOPAZ SEMICONDUCTOR OSE D B coasaze OoOoL04e2 A > SD1137, TNOICS SEMICONDUCTOR mene 7-29 - N-CHANNEL ENHANCEMENT-MODE * ORDERING INFORMATION [TG-226AA {TQ-92} Plastic Package | SD1Ii37BD TNOIO6N3 -| TNOTIONS Sorted Chips in Watile Pack _- - SDI137CHP FNOIGEND f TNONOND Descriptions. 60V.25 ohm | 60V.3.0 ohm _ | 100V, 3.0 ohm FEATURES APPLICATIONS @ Low Threshold,, Vagithy1.5V max H Complementary Voltage and Current Drivers @ Low Output and Transfer Capacitance @ Line Drivers @ Extended Safe Operating Area Mm Pulse Amplifiers @ Complementary P-Channel Drivers Available H Solid-State Relays ABSOLUTE MAXIMUM RATINGS (1, = + 25C unless otherwise specified) Drain-Source Voltage Peak Pulsed Drain Current .....cc cece eee eee + 2.04 $D1137, TNO106 Continuous Device Dissipation TNOU10 2c cece ccc ee eee eter r eee eens Ta = +25C To= +25C $D1137, TNO106 . TO-92 (N3 & BD) pkg 0.30W 1.0W TNON10 ......5-. Linear Derating Factor Gate-Source Voltage .... 00... eee eee eee eee ee + 30V Ta=+25C To = +25C Continuous Drain Current TO-92 (N3 & BD) pkg 3.0mWiC TomWwiC Ta = + 25C To = +25C Operating Junction and Storage Temperature Range $D1137BD 254 AGA -55C to + 150C TNO106N3 } 234 424 Lead Temperature (1/16 from mounting surface TNOTION3 fOrBO SOC). cee cece cece ete nen en teen eneeae + 250C PIN CONFIGURATION PACKAGE DIMENSIONS CHIP CONFIGURATION (TO-92) TO-226AA (See Package 5) t -4 I Sy Gate 3 Source Dimensions: .054 .054 * .020 in. Drain is backside contact 3-86 0-88-6TOPAZ SEMICONDUCTOR OSE D Bf soase2t Oo01043 7 f TOlFAN ZS $D1137, TNOIOS SEMICONDUCTOR TNOTIO : T-29-25 ELECTRICAL CHARACTERISTICS (Ta = + 25C unless otherwise specified) aa . $D1137 TNO10! TNO1t #}| PARAMETER MIN | TYP | MAX| MIN | TYP | MAX | MIN | TYP | MAX UNIT CONDITIONS 1} BVpss Drain-Source 60 90 60 90 100 | 115 Vv Ip =1.0mA, Veg =0 Breakdown Voltage 2 7 700 Vos =48V_ | Ta= + 125C Pa 500 Vos =48V__] Vag =0 4 Drain-Source 600 Vos = 80V | 5} Ipss Off Leakage 01 1.0 Vos = 60V | 6] Current Ot 10 HA Vps=60V_ | Vag=0 7 01 10 Vps = 100V | 3] Gate-Baody + 1.0 +10 10 HA Vap= +30V} Vos =0 9 Igag Leakage Current 1.0 10 10 nA Vep = 20V 10] Ves) Gate-Source 0.5 16 0.5 15 0.5 156 Vv Vos = Vas: !p = 1.0MA Threshold Voltage 1141 fosion) Drain-Source 45 45 4.5 ohms | Veg =5V, lp =.25A 112] On Resistance 25 Ves=10V [ Ip=1.0A 13 3.0 3.0 Ip =0.5A 14) Ipyony On Drain Current 75 A A Vas =5V Vps = 25V 15 2.0 2.0 2.0 Ves = 10V (Note 1) 116] ots Common-Source 300 | 500 mmhos] Vos5 =25V Ip =0.5A 17 Forward Transcond. 225 | 500 225 | 500 Vpg = 20V f= 1KHz 178] Vsp Source-Drain 15 v Isp = 0,8A Veg=0 19 Forward Voltage 15 15 Isp =0.5A 20] Cisg | Common-Source 60 60 60 Input Capacitance 21] Cass Common-Source sb 35 Vi 36 11 35 Vpg = 25V Output Capacitance pF Ves =0 22 Common-Source f=1MHz Crgg_-- Reverse Transfer 15 | 80 15] 8.0 16) 80 Capacitance 234 ton Turn ON Time 80 | 10 80 | 10 8.0 | 10 nS | Vpp=25V, Veton = 10V 241 to == Turn OFF Time 8.0 12 8.0 12 8.0 12 Rg =512, R,_ = 252 NOTE 1: Pulse Test, 80:Sec, 1% Duty Cycle 3-87