DATA SH EET
Product data sheet
Supersedes data of 1999 May 11 2003 Mar 25
DISCRETE SEMICONDUCTORS
BAV170
Low-leakage double diode
bo
ok, halfpage
M3D088
2003 Mar 25 2
NXP Semiconductors Product data sheet
Low-leakage double diode BAV170
FEATURES
•Plastic SMD package
•Low leakage current: typ. 3 pA
•Switching time: typ. 0.8 µs
•Continuous reverse voltage:
max. 75 V
•Repetitive peak reverse voltage:
max. 85 V
•Repetitive peak fo rward current:
max. 500 mA.
APPLICATION
•Low-leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are in
common cathode con fig uration.
PINNING
PIN DESCRIPTION
1anode
2anode
3common cathode
Fig.1 Simplified outline (SOT23 ) and symbo l .
handbook, 4 columns 21
3
Top view
MAM108
21
3
MARKING
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
TYPE NUMBER MARKING
CODE(1)
BAV170 JX*
2003 Mar 25 3
NXP Semiconductors Pr oduct data sheet
Low-leakage double diode BAV170
LIMITING VALUES
In accordance with the Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. Device mounted o n a FR4 printed-circuit board.
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak reverse voltage −85 V
VRcontinuous revers e voltage −75 V
IFcontinuous forward current single diode loaded; note 1;
see Fig.2 −215 mA
double diode loaded; note 1;
see Fig.2 −125 mA
IFRM repetitive peak forward current −500 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
tp = 1 µs−4 A
tp = 1 ms −1 A
tp = 1 s −0.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF = 1 mA −900 mV
IF = 10 mA −1 000 mV
IF = 50 mA −1 100 mV
IF = 150 mA −1 250 mV
IRreverse current see Fig.5
VR = 75 V 0.003 5nA
VR = 75 V; Tj = 150 °C 3 80 nA
Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.6 2−pF
trr reverse recove ry time when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
0.8 3µs
2003 Mar 25 4
NXP Semiconductors Pr oduct data sheet
Low-leakage double diode BAV170
THERMAL CHARACTE RISTICS
Note
1. Device mounted o n a FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 360 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
GRAPHICAL DATA
Device moun ted on a FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2 Maximum permissible continuous forward
current as a func tion of ambient
temperature.
handbook, halfpage
0 100
IF
(mA)
200
300
0
100
200
MBG521
Tamb (oC)
(1)
(2)
Fig.3 Forward current as a function of forward
voltage; per diode.
handbook, halfpage
0 1.6
300
0
100
200
MLB752 - 1
0.8 1.20.4
IF
(mA)
V (V)
F
(1) (2) (3)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
2003 Mar 25 5
NXP Semiconductors Pr oduct data sheet
Low-leakage double diode BAV170
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
Based on square wave currents; Tj = 25 °C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
VR = 75 V.
(1) Maximum values.
(2) Typical values.
Fig.5 Reverse current as a fun ction of junc tion
temperature; per diode.
h
andbook, halfpage
10
2
10
3
150 200
500
MLB754
100
10
1
10
1
10
2
IR
(nA)
T ( C)
o
j
(1)
(2)
Fig.6 Diode capacitance as a function of reverse
voltage; per diode; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
01020155
2
0
1
MBG526
V
R
(V)
Cd
(pF)
2003 Mar 25 6
NXP Semiconductors Pr oduct data sheet
Low-leakage double diode BAV170
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse reco very time test circuit and waveforms.
2003 Mar 25 7
NXP Semiconductors Pr oduct data sheet
Low-leakage double diode BAV170
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT2
3
2003 Mar 25 8
NXP Semiconductors Pr oduct data sheet
Low-leakage double diode BAV170
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document befor e initiating or completing a design.
2. The product s ta tus of device(s) described in this do cument may have ch anged since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the produc t specification.
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificati on .
Limiting values ⎯ Stress abov e on e or more limit ing
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values a re s t ress ratings only and
operation of the device at these or an y other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No changes were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands 613514/04/pp Date of release: 2003 Mar 25 Docum ent order number: 9397 750 10965
