www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 82582
2Rev. 1.7, 24-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ILD1615, ILQ1615
Vishay Semiconductors Optocoupler, Phototransistor Output,
(Dual, Quad Channel), 110 °C Rated
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to wave profile for soldering conditions for through hole devices.
Note
• Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Peak reverse voltage VR6.0 V
Forward current IF60 mA
Surge current IFSM 1.5 A
Power dissipation Pdiss 100 mW
Derate linearly from 25 °C 1.0 mW/°C
OUTPUT
Collector emitter breakdown voltage BVCEO 70 V
Emitter collector breakdown voltage BVECO 7.0 V
Collector current IC50 mA
t < 1.0 ms IC100 mA
Power dissipation Pdiss 150 mW
Derate linearly from 25 °C 1.5 mW/°C
COUPLER
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 110 °C
Soldering temperature (1) 2.0 mm distance from case bottom Tsld 260 °C
Package power dissipation ILD1615 400 mW
Derate linearly from 25 °C 5.33 mW/°C
Package power dissipation ILQ1615 500 mW
Derate linearly from 25 °C 6.67 mW/°C
Isolation test voltage t = 1.0 s VISO 5300 VRMS
Creepage distance 7.0 mm
Clearance distance 7.0 mm
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012
VIO = 500 V, Tamb = 100 °C RIO 1011
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 10 mA VF1.0 1.15 1.3 V
Breakdown voltage IR = 10 μA VBR 6.0 30 V
Reverse current VR = 6.0 V IR0.01 10 μA
Capacitance VR = 0 V, f = 1.0 MHz CO25 pF
OUTPUT
Collector emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 6.8 pF
Collector emitter leakage current VCE = 10 V ICEO 5.0 100 nA
Collector emitter breakdown voltage ICE = 0.5 mA BVCEO 70 V
Emitter collector breakdown voltage IE = 0.1 mA BVECO 7.0 V
PACKAGE TRANSFER CHARACTERISTICS
Channel/channel CTR match IF = 10 mA, VCE = 5.0 V CTRX/CTRY 1 to 1 2 to 1
COUPLER
Capacitance (input to output) VIO = 0 V, f = 1.0 MHz CIO 0.8 pF
Insulation resistance VIO = 500 V, TA = 25 °C RS1012 1014
Channel to channel isolation 500 VAC