tm
©2007 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGA20N120FTD Rev. A
FGA20N120FTD 1200V, 20A Trench IGBT
December 2007
Absolute Maximum Ratings
Notes:
1: Repetitive rating, Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description Ratings Units
VCES Collector to Emitter Voltage 1200 V
VGES Gate to Emitter Voltage ± 25 V
ICContinuous Collector Current @ TC = 25oC40 A
Continuous Collector Current @ TC = 100oC20 A
ICM (1) Pulsed Collector Current 60 A
IFDiode Continuous Forward Current @ TC = 25oC 20 A
PDMaximum Power Dissipation @ TC = 25oC 298 W
Maximum Power Dissipation @ TC = 100oC119 W
TJ Operating Junction Temperature -55 to +150 oC
Tstg Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction to Case -0.42 oC/W
RθJC(Diode) Thermal Resistance, Junction to Case -2.0 oC/W
RθJA Thermal Resistance, Junction to Ambient -40 oC/W
G
E
C
G ECTO-3PN
FGA20N120FTD
1200V, 20A Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: VCE(sat) =1.6V @ IC = 20A
• High input impedance
• RoHS compliant
Applications
• Induction heating and Microvewave oven
• Soft switching applications
General Description
Using advanced field stop trench technology, F airchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is desi gned for soft switching applica-
tions.
2www.fairchildsemi.com
FGA20N120FTD Rev. A
FGA20N120FTD 1200V, 20A Trench IGBT
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Device Marking Device Package Reel Size Tape Width Quantity
FGA20N120FTD FGA20N120FTDTU TO-3PN - - 30
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 - - V
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±250 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 20mA, VCE = VGE 3.5 5.9 7.5 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V
TC = 25oC-1.60 2.00 V
IC = 20A, VGE = 15V,
TC = 125oC-1.85 - V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-3080 -pF
Coes Output Capacitance -95 -pF
Cres Reverse Transfer Capacitance -60 -pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 600V, IC = 20A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 25oC
-30 -ns
trRise Time -79 -ns
td(off) Turn-Off Delay Time -143 -ns
tfFall Time -217 320 ns
Eon Turn-On Switching Loss -0.42 -mJ
Eoff Turn-Off Switching Loss -0.71 1.05 mJ
Ets Total Switching Loss -1.13 -mJ
td(on) Turn-On Delay Time
VCC = 600V, IC = 20A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 125oC
-29 -ns
trRise Time -93 -ns
td(off) Turn-Off Delay Time -147 -ns
tfFall Time -259 -ns
Eon Turn-On Switching Loss -0.47 -mJ
Eoff Turn-Off Switching Loss -0.86 -mJ
Ets Total Switching Loss -1.33 -mJ
QgTotal Gate Charge VCE = 600V, IC = 20A,
VGE = 15V
-137 -nC
Qge Gate to Emitter Charge -23 -nC
Qgc Gate to Collector Charge -65 -nC
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FGA20N120FTD Rev. A
FGA20N120FTD 1200V, 20A Trench IGBT
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Units
VFM Diode Forward Voltage IF = 20A TC = 25oC - 1.3 1.7 V
TC = 125oC - 1.3 -
trr Diode Reverse Recovery Time
IES =20A,
dI/dt = 200A/µs
TC = 25oC - 447 -ns
TC = 125oC - 485 -
Irr Diode Peak Reverse Recovery Current TC = 25oC - 48 -A
TC = 125oC - 50 -
Qrr Diode Reverse Recovery Charge TC = 25oC - 10.8 -µC
TC = 125oC - 12 -
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FGA20N120FTD Rev. A
FGA20N120FTD 1200V, 20A Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
0.0 1.5 3.0 4.5 6.0 7.5 9.0
0
30
60
90
120
150
180
8V 7V
9V
17V
20V
TC = 25oC
15V
12V
10V
VGE = 6V
Collector Current , IC [A]
Collector-Emitter Voltage, VCE [V] 0.0 1.5 3.0 4.5 6.0 7.5 9.0
0
30
60
90
120
150
180
17V
7V 10V
9V
8V
20V
TC = 125oC
15V
12V
VGE = 6V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
0123456
0
20
40
60
80
100
120
Comm on E m itter
VGE = 15V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V] 3691215
0
20
40
60
80
100
120 Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Gate-Emitter Voltage,VGE [V]
25 50 75 100 125
1.2
1.6
2.0
2.4
2.8
40A
20A
IC = 10A
Comm on E m itter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Collector-EmitterCase Temperature, TC [oC]0 4 8 12 16 20
0
4
8
12
16
20
IC = 10A
20A 40A
Comm on Em itter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
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FGA20N120FTD Rev. A
FGA20N120FTD 1200V, 20A Trench IGBT
Typical Performance Characteristics
Figure 7. Saturatio n Voltage vs. VGE Figure 8. Capacitance Characteristics
Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics
Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
0 4 8 121620
0
4
8
12
16
20
IC = 10A
20A 40A
Comm on E m itter
TC = 125oC
Collector-Emitter Vo ltage, VCE [V]
Gate-Emitter Voltage, VGE [V] 110
0
1000
2000
3000
4000
5000 Comm on E mitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V] 30
0 306090120150
0
3
6
9
12
15 Comm on Em itter
TC = 25oC
600V
400V
VCC = 200V
Gate-Emitter Voltage, VGE [V]
Ga te Cha r g e , Qg [nC ]
1 10 100 1000
0.01
0.1
1
10
100
1ms
10 ms
DC
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10µs
100µs
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V] 2000
0 20406080100
10
100
Common Emitter
VCC = 600V, V GE = 15V
IC = 20A
TC = 25oC
TC = 125oC
td(on)
tr
Switching Time [ns]
Gate Resistance, RG [Ω]
300
0 20406080100
100
1000
2000
70
Common Emitter
VCC = 600V, V GE = 15V
IC = 20A
TC = 25oC
TC = 125oC td(off)
tf
Switching Time [ns]
Gate Resistance, RG [Ω]
Gate Resist an c e Gate Resistance
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FGA20N120FTD Rev. A
FGA20N120FTD 1200V, 20A Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Charac teristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
Figure 15. Switching Loss v s. Gate Resistance Figure 16. Switching Loss vs. Collector Current
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteris tic s
10 20 30 40 50
10
100
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
tr
td(on)
Switching Time [ns]
Collector Current, IC [A]
500
10 20 30 40 50
10
1000
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
td(off)
tf
Switching Time [ns]
Colle c to r C urren t, IC [A]
100
0 20406080100
1
0.3
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
Eon
Eoff
Switching Loss [mJ]
Gate Resistance, RG [Ω]
4
10 20 30 40 50
0.1
1
10 Common Emitter
VGE = 15V, R G = 10Ω
TC = 25oC
TC = 125oC
Eon
Eoff
Switching Loss [mJ]
Colle c to r Curren t, IC [A]
0.00.51.01.52.0
0.1
1
10
TJ = 25oC
30
TC = 125oC
TC = 25oC
TJ = 125oC
Forward Voltage, VF [V]
Forward Current, IF [A]
1 10 100 1000
1
10
Safe O pe rating Area
VGE = 15V, TC = 125oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V] 2000
80
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FGA20N120FTD Rev. A
FGA20N120FTD 1200V, 20A Trench IGBT
Typical Performance Characteristics
Figure 19. Reverse Recovery Current Figure 20. Stored Charge
Figure 21.Reverse Recovery Time
Figure 22.Transient Thermal Impedance of IGBT
5 10152025
0
10
20
30
40
50
60
200A/µs
di/dt = 100A/µs
Reverse Recovery Currnet, Irr [A]
Forwa rd C u rre n t, IF [A] 5 10152025
0
3000
6000
9000
12000
15000
200A/µs
di/dt = 100A/µs
Stored Recovery Charg e, Qrr [nC]
Forwa rd Cu rren t, IF [A]
510152025
0
200
400
600
800
1000
200A/µs
di/dt = 100A/µs
Reverse Recovery Time, trr [ns]
Fo rward Cu rre n t, IF [A]
1E-5 1E-4 1E-3 0.01 0.1 1 10
1E-3
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t1
PDM
t2
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FGA20N120FTD Rev. A
FGA20N120FTD 1200V, 20A Trench IGBT
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FGA20N120FTD 1200V, 20A Trench IGBT
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FGA20N120FTD Rev. A
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Rev. I31
