BD533/535/537 MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE Complement to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS NPN EPITAXIAL SILICON TRANSISTOR Characteristic Symbol} Rating Unit Collector Emitter Voltage : BD533 Veso 45 Vv : BD535 60 Vv : BD537 80 Vv Collector Emitter Voltage : BD533 Voces 45 Vv : BD535 60 Vv : BD537 80 Vv Collector Emitter Voltage : BD533 VcEo 45 Vv : BD535 60 Vv : BD537 80 Vv Emitter Base Voltage VeBo 5 Vv Collector Current (DC) le 8 A Emitter Current le 8 A Base Current lb 1 A Collector Dissipation (Te=25C) Pe 50 Ww Junction Temperature Ty 150 C Storage Temperature Tsta -65 ~ 150 C TO-220 1.Base 2.Collector 3.Emitter ELECTRICAL CHARACTERISTICS (T, =25c) Characteristic Symbol Test Conditions Min | Typ | Max | Unit Collector Cutoff Current : BD533 leBo Vop = 45V, le=0 100 pA : BD535 Vcp = 60V, le=0 100 LA : BD537 Vcp = 80V, le=0 100 nA Collector Cutoff Current : BD533 Ices Vce= 45V, Vae= 0 100 HA : BD535 Vee = 60V, Vee =0 100 LA : BD537 Vee = 80V, Vee =0 100 nA Emitter Cutoff Current leBo Vep= 5V, Ic=0 1 mA *DC Current Gain : BD533/535 Hee Vce= 5V, Io= 10MA 20 : BD537 15 : ALL DEVICE Voce = 2V, Ic = 500MA 40 : BD533/535 Voe= 2V, Ic= 2A 25 : BD537 15 hre Groups J : ALL DEVICE Hee Voe= 2V, Ic= 2A 30 75 VoeE= 2V, Io= 3A 15 K : ALL DEVICE Voe= 2V, Ic= 2A 40 100 Voe= 2V, Ic= 3A 20 *Collector Emitter Saturation Voltage Voe(sat) Io = 2A, Ip=0.2A 0.8 V Ic= 6A, Ip= 0.6A 0.8 V *Base Emitter On Voltage Vpe(on) Voe=2V,lc=2A 15 V Transition Frequency fr Vce= 1V, Ilo = 500mMA 3 12 MHz * Pulse Test: PW =300us, duty Cycle =1.5% Pulsed Rev. B ee FAIRCHILD a SEMICONDUCTOR m 1999 Fairchild Semiconductor CorporationBD533/535/537 DC CURRENT GAIN 1000 100 hee, DC CURRENT GAIN 10 0.01 0.02 0.05 0.1 02 05 1 icfA), COLLECTOR CURRENT BASE EMITTER SATURATION VOLTAGE Vae(sat)(V), SATURATION VOLTAGE 04 0.2 0.5 1 2 5 le(A}, COLLECTOR CURRENT POWER DERATING 2 =10.Ie 10 20 Vce(sat\(V), SATURATION VOLTAGE Ic(A), COLLECTOR CURRENT NPN EPITAXIAL SILICON TRANSISTOR COLLECTOR EMITTER SATURATION VOLTAGE 1 Ip = 10. 05 02 01 0.05 0.02 0.01 01 0.2 0.5 1 2 5 10 IcfA), COLLECTOR CURRENT SAFE OPERATING AREA 100 50 20 10 Fig MAX. 5 2 1 0.5 BDS33 0.2 BD537 o4 1 2 5 10 20 50 100 200 500 Voe(V), COLLECTOR EMITTER VOLTAGE 1000 z 2 = a a er w = Qo a = e 0 2 8075 100125-=180175~=200 Te(C), CASE TEMPERATURE ssearpsensaesapanannapanangnenasasessassesaanned FAIRCHILD ee SEMICONDUCTOR m