5LN01SS Ordering number : EN6560B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5LN01SS General-Purpose Switching Device Applications Features * * * Low ON-resistance Ultrahigh-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Unit 50 V 0.1 A 0.4 A 0.15 W Channel Temperature PD Tch 150 C Storage Temperature Tstg --55 to +150 C Allowable Power Dissipation PW10s, duty cycle1% V 10 This product is designed to "ESD immunity < 200V*", so please take care when handling. * Machine Model Package Dimensions Product & Package Information unit : mm (typ) 7029A-003 * Package : SSFP * JEITA, JEDEC : SC-81 * Minimum Packing Quantity : 8,000 pcs./reel 5LN01SS-TL-E 5LN01SS-TL-H 1.4 0.1 3 Packing Type: TL Marking 2 0.45 TL 0.2 Electrical Connection 0.6 0.07 YB LOT No. 1 LOT No. 0.3 0.8 0 to 0.02 0.07 1.4 0.3 0.25 1 2 3 3 1 : Gate 2 : Source 3 : Drain SANYO : SSFP 1 2 http://semicon.sanyo.com/en/network 62712 TKIM/31506PE MSIM TB-00002117/82200 TSIM TA-2065 No.6560-1/7 5LN01SS Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=50V, VGS=0V 50 IGSS VGS(off) | yfs | VGS=8V, VDS=0V VDS=10V, ID=100A 0.4 VDS=10V, ID=50mA 0.13 RDS(on)1 ID=50mA, VGS=4V 6 7.8 RDS(on)2 ID=30mA, VGS=2.5V 7.1 9.9 RDS(on)3 ID=10mA, VGS=1.5V 10 20 Ciss V 1 A 10 A 1.3 0.18 V S 6.6 pF Output Capacitance Coss 4.7 pF Reverse Transfer Capacitance Crss 1.7 pF Turn-ON Delay Time td(on) tr 18 ns 42 ns 190 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=100mA 105 ns 1.57 nC 0.20 nC 0.32 IS=100mA, VGS=0V 0.85 nC 1.2 V Switching Time Test Circuit 4V 0V VDD=25V VIN ID=50mA RL=500 VOUT VIN PW=10s D.C.1% D G 5LN01SS P.G 50 S Ordering Information Package Shipping memo 5LN01SS-TL-E Device SSFP 8,000pcs./reel Pb Free 5LN01SS-TL-H SSFP 8,000pcs./reel Pb Free and Halogen Free No.6560-2/7 5LN01SS ID -- VDS VDS=10V 6.0 V VGS=1.5V 0.05 0.04 0.03 0.12 C 0.10 0.08 0.06 0.02 0.04 0.01 0.02 0 0 0 0.2 0.4 0.6 0.8 1.0 Drain-to-Source Voltage, VDS -- V 0 1.5 2.0 2.5 Static Drain-to-Source On-State Resistance, RDS(on) -- 10 9 50mA ID=30mA 6 5 4 3.0 IT00055 RDS(on) -- ID VGS=4V 7 11 7 1.0 100 Ta=25C 8 0.5 Gate-to-Source Voltage, VGS -- V IT00054 RDS(on) -- VGS 12 Static Drain-to-Source On-State Resistance, RDS(on) -- 0.14 75 C Drain Current, ID -- A 0.16 0.07 0.06 Ta= --25 C 0.18 25 5V V 2.0 2. 4.0V 0.08 Drain Current, ID -- A 3 .0 3.5V 0.09 ID -- VGS 0.20 V 0.10 5 3 2 10 Ta=75C 25C --25C 7 5 3 2 3 1.0 0.01 2 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 2 Ta=75C --25C 5 25C 3 2 1.0 0.01 2 3 5 7 2 0.1 Drain Current, ID -- A 8 0V = ID 4. S= , VG mA 50 I D= 6 4 2 0 --60 --40 --20 0 20 40 60 80 3 2 Ta=75C 10 --25C 7 25C 5 3 2 2 3 100 Ambient Temperature, Ta -- C 120 140 160 IT00060 5 7 0.01 Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S .5V 3 IT00057 VGS=1.5V 2 3 IT00059 | yfs | -- ID 1.0 2 S= , VG A 30m 2 0.1 5 1.0 0.001 3 12 10 7 RDS(on) -- ID IT00058 RDS(on) -- Ta 14 5 7 3 7 3 Drain Current, ID -- A 100 5 10 2 IT00056 VGS=2.5V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- 10 RDS(on) -- ID 100 Static Drain-to-Source On-State Resistance, RDS(on) -- 9 Static Drain-to-Source On-State Resistance, RDS(on) -- 0 VDS=10V 7 5 3 25C Ta= -- 2 75C 0.1 25C 7 5 3 2 0.01 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 IT00061 No.6560-3/7 5LN01SS IS -- VSD 3 Switching Time, SW Time -- ns 25 C 3 --25 C 5C 5 Ta= 7 Source Current, IS -- A 7 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage, VSD -- V tf 100 7 2 10 Ciss 5 Coss 3 2 Crss 3 5 10 15 20 25 30 td(on) 2 2 3 5 7 10 0.1 IT00063 VGS -- Qg VDS=10V ID=100mA 8 7 6 5 4 3 2 1 1.0 0 tr 5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 3 7 td(off) 2 9 5 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT00064 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 1.8 IT00065 PD -- Ta 0.2 Allowable Power Dissipation, PD -- W 3 IT00062 f=1MHz 7 5 10 0.01 1.1 Ciss, Coss, Crss -- VDS 100 VDD=25V VGS=4V 7 2 0.1 SW Time -- ID 1000 VGS=0V 0.15 0.1 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT02007 No.6560-4/7 5LN01SS Embossed Taping Specification 5LN01SS-TL-E, 5LN01SS-TL-H No.6560-5/7 5LN01SS Outline Drawing 5LN01SS-TL-E, 5LN01SS-TL-H Land Pattern Example Mass (g) Unit 0.0018 mm * For reference Unit: mm 1.2 0.5 0.5 0.45 0.45 0.45 0.45 No.6560-6/7 5LN01SS Note on usage : Since the 5LN01SS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No.6560-7/7