5LN01SS
No.6560-1/7
Features
• Low ON-resistance
•
Ultrahigh-speed switching
•
2.5V drive
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 50 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID0.1 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 0.4 A
Allowable Power Dissipation PD0.15 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Package Dimensions
unit : mm (typ)
7029A-003
Ordering number : EN6560B
62712 TKIM/31506PE MSIM TB-00002117/82200 TSIM TA-2065
5LN01SS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Product & Package Information
• Package : SSFP
• JEITA, JEDEC : SC-81
•
Minimum Packing Quantity
: 8,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
SANYO Semiconductors
DATA SHEET
YB
LOT No.
LOT No.
1
2
3
TL
1 : Gate
2 : Source
3 : Drain
SANYO : SSFP
1
3
12
2
3
1.4
1.4
0.3 0.3
0.8
0.6
0.070.07
0 to 0.02
0.25
0.2
0.45
0.1
5LN01SS-TL-E
5LN01SS-TL-H
5LN01SS
No.6560-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 50 V
Zero-Gate Voltage Drain Current IDSS VDS=50V, VGS=0V 1 μA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=100μA 0.4 1.3 V
Forward Transfer Admittance | yfs |VDS=10V, ID=50mA 0.13 0.18 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=50mA, VGS=4V 6 7.8 Ω
RDS(on)2 ID=30mA, VGS=2.5V 7.1 9.9 Ω
RDS(on)3 ID=10mA, VGS=1.5V 10 20 Ω
Input Capacitance Ciss VDS=10V, f=1MHz 6.6 pF
Output Capacitance Coss 4.7 pF
Reverse Transfer Capacitance Crss 1.7 pF
Turn-ON Delay Time td(on)
See specifi ed Test Circuit.
18 ns
Rise Time tr 42 ns
Turn-OFF Delay Time td(off) 190 ns
Fall Time tf105 ns
Total Gate Charge Qg VDS=10V, VGS=10V, ID=100mA 1.57 nC
Gate-to-Source Charge Qgs 0.20 nC
Gate-to-Drain “Miller” Charge Qgd 0.32 nC
Diode Forward Voltage VSD IS=100mA, VGS=0V 0.85 1.2 V
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
5LN01SS-TL-E SSFP 8,000pcs./reel Pb Free
5LN01SS-TL-H SSFP 8,000pcs./reel Pb Free and Halogen Free
PW=10μs
D.C.≤1%
4V
0V
VIN
P.G 50Ω
G
S
D
ID=50mA
RL=500Ω
VDD=25V
VOUT
5LN01SS
VIN
5LN01SS
No.6560-3/7
1.0
0.01 0.1
23 57 23
10
7
5
3
2
100
7
5
3
2
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
0
0
0.02
0.01
0.04
0.03
0.06
0.05
0.08
0.07
0.2
0.10
0.09
0.4 0.6 0.8 1.0
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
3.5V
6.0V
2.0V
2.5V
4.0V
3.0V
0 0.5 1.0 1.5 2.0 3.02.5
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
VDS=10V
Ta= --25°C
75°C
25°C
012
6
7
8
9
10
11
12
3456
2
3
4
5
78910
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS Ta=25°C
Drain Current, ID -- A
RDS(on) -- IDVGS=4V
--25°C
25°C
Ta=75°C
IT00054 IT00055
IT00056 IT00057
VGS=1.5V
ID=30mA
50mA
0.01
0.01 0.1
23 57 23
1.0
0.1
7
5
3
2
7
5
3
2
1.0
0.01 0.1
23 57 23
10
7
5
3
2
100
7
5
3
2
1.0
0.001 0.01
23 57 23
10
7
5
3
2
100
7
5
3
2
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
--60
0
2
4
6
8
10
12
14
--40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
RDS(on) -- Ta
ID=30mA, VGS=2.5V
ID=50mA, VGS=4.0V
Drain Current, ID -- A
Forward T ransfer Admittance, | yfs | -- S
| yfs | -- IDVDS=10V
IT00060 IT00061
Ta= --25
°
C
25°C
75°C
Drain Current, ID -- A
RDS(on) -- IDVGS=2.5V
--25°C
25°C
Ta=75°C
Drain Current, ID -- A
RDS(on) -- IDVGS=1.5V
IT00058 IT00059
--25°C
25°C
Ta=75°C
5LN01SS
No.6560-4/7
0.5 0.6 0.7 0.8 0.9 1.0 1.1
5
0.01
0.1
3
2
7
3
2
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
IS -- VSD VGS=0V
25°C
--25°C
Ta=75
°
C
05
10
10 15
100
7
5
3
2
7
5
3
2
1.0 20 25 30 35 40 45 50
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -- pF
Ciss
Coss
Crss
f=1MHz
0.01
10 0.1
23 57
1000
100
7
5
3
2
7
5
3
2
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
VDD=25V
VGS=4V
td(off)
td(on)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
1
2
3
4
5
6
7
8
9
10
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
VDS=10V
ID=100mA
IT00062 IT00063
IT00064 IT00065
tr
tf
0 20 40 60 100 120 140
080
0.2
0.05
0.1
0.15
160
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IT02007
5LN01SS
No.6560-5/7
Embossed Taping Specifi cation
5LN01SS-TL-E, 5LN01SS-TL-H
5LN01SS
No.6560-6/7
Outline Drawing Land Pattern Example
5LN01SS-TL-E, 5LN01SS-TL-H
Mass (g) Unit
0.0018
* For reference
mm Unit: mm
0.5
0.5
0.45 0.45
0.45 0.45
1.2
5LN01SS
No.6560-7/7PS
This catalog provides information as of June, 2012. Specifi cations and information herein are subject
to change without notice.
Note on usage : Since the 5LN01SS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
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or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
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