2N2905A
2N2907A
SMALL SIGNAL PNP TRANSISTORS
DESCRIPTION
The 2N2905A and 2N2907A are silicon Planar
Epitaxial PNP transistors in Jedec TO-39 (for
2N2905A) and in Jedec TO-18 (for 2N2907A)
metal case. They are designed for high speed
saturated switching and general purpose
applications.
INT E R NAL SCH E M ATI C DIAG RA M
February 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) -60 V
VCEO Collector-Emitter Voltage (IB = 0) -60 V
VEBO Emitter-Base Voltage (IC = 0) -5 V
ICCollector Current -0.6 A
ICM Collector Peak Current (tp < 5 ms) -0.8 A
Ptot Total Dissipation at Tamb ≤ 25 oC
for 2N2905A
for 2N2907A
at TC ≤ 25 oC
for 2N2905A
for 2N2907A
0.6
0.4
3
1.8
W
W
W
W
Tstg Storage Temperature -65 to 175 oC
TjMax. Operating Junctio n Te mperature 175 oC
TO-18 TO-39
®
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THERMAL DATA
TO-39 TO-18
Rthj-case
Rthj-amb Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Amb ient Max 50
250 83.3
375
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = -50 V
VCB = -50 V Tj = 150 oC-10
-10 nA
µA
ICEX Collector Cut-off
Current (VBE = 0.5V) VCE = -30 V -50 nA
IBEX Base Cut-off Cu rrent
(VBE = 0.5V) VCE = -30 V -50 nA
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = -10 µA-60 V
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = -10 mA -60 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = -10 µA-5 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA -0.4
-1.6 V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA -1.3
-2.6 V
V
hFE∗DC Current Ga in IC = -0.1 mA VCE = -10 V
IC = -1 mA VCE = -10 V
IC = -10 mA VCE = -10 V
IC = -150 mA VCE = -10 V
IC = -500 mA VCE = -10 V
75
100
100
100
50 300
fTTransition Frequency VCE = -20 V f = 100 MHz
IC = -50 mA 200 MHz
CEBO Emitter-Base
Capacitance IC = 0 VEB = -2 V f = 1MHz 30 pF
CCBO Collector-Base
Capacitance IE = 0 VCB = -10 V f = 1MHz 8 pF
td∗∗ Delay Time VCC = -30 V IC = -150 mA
IB1 = -15 mA 10 ns
tr∗∗ Rise Time VCC = -30 V IC = -150 mA
IB1 = -15 mA 40 ns
ts∗∗ Storage Time VCC = -6 V IC = -150 mA
IB1 = -IB2 = -15 mA 80 ns
tf∗∗ Fall Time VCC = -6 V IC = -150 mA
IB1 = -IB2 = -15 mA 30 ns
ton∗∗ Turn-on Time VCC = -30 V IC = -150 mA
IB1 = -15 mA 45 ns
toff∗∗ Turn-off Time VCC = -6 V I C = -150 mA
IB1 = -IB2 = -15 mA 100 ns
* Pulsed: Pulse durat ion = 300 µs, duty cycl e ≤ 1 %
** See t est circuit
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Normalized DC Current Gain. Collector Emitter Saturation Voltage.
C ollector Base and Emit ter- base capacit ances. Switc hing Characteris tics .
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Tes t Circuit for ton, tr, td.
PULSE GENERATOR : TO OSCILLOSCOPE :
tr ≤ 2.0 ms tr < 5.0 ns
Frequency = 150 Hz ZIN > 10 MΩ
Zo = 50 Ω
Tes t Circuit for toff, to, tf.
PULS E GENERATOR : TO O SCILLOSCOPE :
tr ≤ 2.0 ns tr < 5.0 ns
Frequency = 150 Hz ZIN > 100 MΩ
Zo = 50 Ω
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E4.9 0.193
F 5.8 0.228
G 2.54 0.100
H1.2 0.047
I 1.16 0.045
L45
o
45
o
L
G
I
D A
F
E
B
H
C
TO-18 MECHANICAL DATA
0016043
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B0.490.019
D6.60.260
E8.50.334
F9.40.370
G 5.08 0.200
H1.20.047
I0.90.035
L45
o
(typ.)
L
G
I
D A
F
E
B
H
P008B
TO-39 MECHANICAL DATA
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