2SK3706
No.7766-1/5
Features
•Low ON-resistance.
•4V drive.
•Motor driver , DC / DC converter.
•Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 100 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID12 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 48 A
Allowable Power Dissipation PD2.0 W
Tc=25°C20W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Enargy (Single Pulse) *1 EAS 18 mJ
Avalanche Current *2 IAV 12 A
*1 VDD=20V, L=200µH, IAV=12A
*2 L≤200µH, single pulse
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 100 V
Zero-Gate Voltage Drain Current IDSS VDS=100V, VGS=0 1 µA
Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance yfsVDS=10V, ID=6A 7 10 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=6A, VGS=10V 100 130 mΩ
RDS(on)2 ID=6A, VGS=4V 120 160 mΩ
Marking : K3706 Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7766
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
73004QA TS IM TA-101121
2SK3706 N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK3706
No.7766-2/5
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=20V, f=1MHz 880 pF
Output Capacitance Coss VDS=20V, f=1MHz 80 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 55 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 11.5 ns
Rise T ime trSee specified Test Circuit. 16 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 97 ns
Fall T ime tfSee specified Test Circuit. 45 ns
Total Gate Charge Qg VDS=50V, VGS=10V, ID=12A 24 nC
Gate-to-Source Charge Qgs VDS=50V, VGS=10V, ID=12A 3.2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=50V, VGS=10V, ID=12A 5.5 nC
Diode Forward Voltage VSD IS=12A, VGS=0 0.92 1.2 V
Package Dimensions
unit : mm
2063A
Switching Time Test Circuit Unclamped Inductive Test Circuit
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
1.6
1.2
0.75
14.0 16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
2.4
123
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=6A
RL=8.33Ω
VDD=50V
VOUT
2SK3706
VIN
10V
0V
VIN
50Ω
≥50ΩDUT
VDD
L
10V
0V
2SK3706
No.7766-3/5
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Case Temperature, Tc -- °C
Drain Current, ID -- A
Forward Transfer Admittance, yfs -- S
Diode Forward Voltage, VSD -- V
Forward Drain Current, IF -- A
Drain Current, ID -- A
Switching Time, SW Time -- ns
Gate-to-Source Voltage, VGS -- V
ID -- VDS ID -- VGS
RDS(on) -- VGS RDS(on) -- Tc
SW Time -- ID
IF -- VSD
yfs-- ID
Cutoff Voltage, VGS(off) -- V
VGS(off) -- Tc
Case Temperature, Tc -- °C
IT07021 IT07022
0 5.04.50.5
IT07023 IT07024
2
40
180
10345678 --50 --25 0 25 50 75 100 125 150
--50 --25 0 25 50 75 100 125 150
9
0
0
20
18
16
14
12
10
8
6
3.01.0 2.00.5 1.5 2.5
4
2
0
25
20
1.0 1.5 2.0 2.5 3.0 3.5 4.0
15
10
5
10V
6V
8V
4V
160
120
80
140
100
60
0
300
250
100
200
150
50
ID=6A
Tc=
75
°C
--25°C
25
°C
ID=
6
A, VGS=4V
ID=
6
A, VGS=10V
Tc=25°C
VGS=3V
VDS=10V
Tc= --25°C
--25°C
25
°C
25°C
75°C
Tc=75°C
IT07028
IT07027
0 0.3 0.6 0.9 1.51.2
0.01
0.1
1.0
10
7
5
3
2
7
5
3
2
7
5
3
2
5
3
2
IT07026
25
°C
--25°C
Tc=75
°C
1.0
23 57 23 57 23
10
10
2
3
5
7
2
3
5
1.0
VDS=10V
25
°C
Tc= --25
°C
75
°C
VGS=0
100
10
3
5
7
3
2
3
2
5
7
0.1 1.0
23 57 23 57 23 5
10
VDD=50V
VGS=10V
td(off)
tf
tr
td(on)
0.5
1.0
1.5
2.0
2.5
IT07025
VDS=10V
ID=1mA
2SK3706
No.7766-4/5
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
A S O
VGS -- Qg
0
020 40
0.5
60
1.5
1.0
80 100 120
2.0
2.5
140 160
PD -- Ta
PD -- Tc
0
020 40
5
60
15
10
80 100 120
20
25
140 160
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
10
2
3
5
7
2
3
5
7
2
3
5
7
1.0
0.1 23 5723 5723 57
0.1 1.0 10 100 2
IT07031
IT07030
IT07032
IT07033
0
0
1
2
3
4
5
6
7
8
2520
10
9
51015
Operation in this area
is limited by RDS(on).
10µs
100µs
1ms
10ms
100ms
ID=12A
IDP=48A
DC operation
0
7
100
1000
7
5
3
2
5
3
2
3
2
305 15202510
IT07029
f=1MHz
Ciss
Coss
Crss
VDS=50V
ID=12A
<10µs
Tc=25°C
Single pulse
2SK3706
No.7766-5/5
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2004. Specifications and information herein are subject
to change without notice.
Note on usage : Since the 2SK3706 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.