Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Dual rectifier construction, positive center tap
• Metal silicon junction, majority carrier conduction
• Low leakage current, Low power loss, High efficiency
• Guardring for overvoltage protection
• For use in high frequency inverters, free wheeling, and
polarity protection applications
Mechanical Data
Case: JEDEC TO-220AB
molded plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case (TO-220AB)
at terminals
Polarity: As marked Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
MBR60100CT
Vishay Semiconductors
formerly General Semiconductor
Document Number 88892 www.vishay.com
10-May-04 1
New Product
Dual High-Voltage Schottky Rectifiers
Reverse Voltage 100V
Forward Current 60A
Max. Junction Temperature 175°C
TO-220AB (MBR60100CT)
0.398 (10.10)
0.382 (8.70)
0.523 (13.28)
0.507 (12.88)
0.185 (4.70
)
0.169 (4.30)
0.024 (0.60)
0.018 (0.45)
0.114 (2.90)
0.106 (2.70)
0.634 (16.10)
0.618 (15.70)
0.055 (1.40)
0.047 (1.20)
0.154 (3.90)
0.138 (3.50)
0.150 (3.80)
0.139 (3.54)
0.118
(3.00) Typ.
0.067
(1.70) Typ.
0.100
(2.54) Typ.
0.331 (8.40) Typ.
0.343 (8.70) Typ.
0.200 (5.08) Typ.
0.056 (1.42)
0.064 (1.62)
0.028 (0.70)
0.035 (0.90)
0.055 (1.40
)
0.049 (1.25)
0.102 (2.60
)
0.087 (2.20)
1.161 (29.48)
1.105 (28.08)
0.638 (16.20
)
0.598 (15.20
)
Dia.
0.370 (9.40)
0.354 (9.00)
123
PIN
CASE
PIN 2
PIN 1
PIN 3
Dimensions in inches
and (millimeters)
Maximum Ratings and Thermal Characteristics (TC= 25°C unless otherwise noted)
Parameter Symbol
MBR60100CT
Unit
Maximum repetitive peak reverse voltage VRRM 100 V
Working peak reverse voltage VRWM 100 V
Maximum DC blocking voltage VDC 100 V
Maximum average forward rectified current Total device 60
Per leg IF(AV) 30 A
Peak forward surge current
8.3ms single half sine-wave superimposed IFSM 350 A
on rated load per leg
Peak repetitive reverse current per leg at tp= 2µs, 1KHZIRRM 1.0 A
Peak non-repetitive reverse surge energy per leg ERSM 25 mJ
(8/20µs waveform)
Non-repetitive avalanche energy per leg
at 25°C, IAS = 1.0A, L = 40mH EAS 20 mJ
Voltage rate of change (rated VR) dv/dt 10,000 V/µs
Operating junction and storage temperature range TJ, TSTG –65 to +175 °C
Typical thermal resistance per leg RΘJC 0.5 °C/W
Electrical Characteristics (TC= 25°C unless otherwise noted)
Parameter Symbol Typ. Max. Unit
Maximum instantaneous IF = 30A, TC = 25°C 0.78 0.82
forward voltage per leg at(1):I
F = 30A, TC = 125°C 0.64 0.69
IF = 60A, TC = 25°C VF0.92 1.0 V
IF = 60A, TC = 125°C 0.78 0.83
Maximum reverse current per leg TJ = 25°C 8.0 100 µA
at working peak reverse voltage TJ = 125°C IR8.5 20 mA
Notes:
(1) Pulse test: 300µs pulse width, 1% duty cycle
MBR60100CT
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com Document Number 88892
210-May-04
0.0 0.2 0.4 0.6 0.8 1.0
100
10
0.1
0.01
1.0
1
0.1
10
100
1000
10000
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
IR -- Instantaneous
Reverse Current (µA)
Transient Thermal Impedance
(°C/W)
Junction Capacitance (pF)
1 10 100
100
10000
0.1
Fig. 5 – Typical Junction Capacitance
Per Leg
Vr, Reverse Voltage (V)
20 10040 60 80
Fig. 4 – Typical Reverse
Characteristics Per Leg
Fig. 6 – Typical Transient
Thermal Impedance
Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
IF -- Instantaneous Forward Current (A)
0
20
30
40
50
60
70
25 50 75 100 125 150 175
Fig. 1 – Forward Derating Curve
Average Forward Current (A)
Case Temperature (°C)
0.1
0.1
0.01
1
110
0
100
200
300
1 10 100
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current Per Leg
Number of Cycles at 60 HZ
Average Forward Current (A)
1000
10
400
100000
1000000
010 30 50 70 90
100
TJ = 175°C
150°C
125°C
25°C
TJ = 175°C
125°C
150°C
25°C
