DRF1201 1000V, 26A, 30MHz MOSFET Driver Hybrid The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution. FEATURES TYPICAL APPLICATIONS * Switching Frequency: DC TO 30MHz * Switching Speed 3-4ns * Class C, D and E RF Generators * Low Pulse Width Distortion * BVds = 1Kv * Switch Mode Power Amplifiers * Ids = 26A avg. * Pulse Generators * Rds(on) .55 Ohm * Ultrasound Transducer Drivers * PD = 1100W * Acoustic Optical Modulators * Single Power Supply * 1V CMOS Schmitt Trigger Input 1V Hysteresis * Inverting Non-Inverting Select * RoHS Compliant Driver Absolute Maximum Ratings Symbol VDD Parameter Min Typ Supply Voltage IN, FN Input Single Voltages IO PK Output Current Peak TJMAX Operating Temperature Max 15 -.7 to +5.5 Unit V 8 A 175 C Max Unit Driver Specifications Parameter Min Typ VDD Supply Voltage 10 15 IN Input Voltage 3 5.5 V IN(R) Input Voltage Rising Edge 3 IN(F) Input Voltage Falling Edge 3 IDDQ Quiescent Current 2 mA Output Current 8 A Ciss Input Capacitance 3 RIN Input Parallel Resistance 1 IO ns M VT(ON) Input, Low to High Out (See Truth Table) 0.8 1.1 VT(OFF) Input, High to Low Out (See Truth Table) 1.9 2.2 TDLY Time Delay (throughput) 38 tr Rise Time 2.5 tf Fall Time 2.5 TD Prop. Delay 35 Microsemi Website - http://www.microsemi.com V ns ns 050-4972 Rev H 07-2014 Symbol DRF1201 Driver Output Characteristics Symbol Parameter Cout Output Capacitance Rout Output Resistance Min Lout Output Inductance FMAX Operating Frequency CL = 3000nF + 50 30 FMAX Operating Frequency RL = 50 50 Typ Max Unit 2500 pF .8 3 nH MHz Driver Thermal Characteristics Symbol Parameter Min Typ RJC Thermal Resistance Junction to Case 1.5 RJHS Thermal Resistance Junction to Heat Sink 2.5 TJSTG Storage Temperature Max C/W C -55 to 150 PDJHS Maximum Power Dissipation @ TSINK = 25C 60 PDJC Total Power Dissipation @ TC = 25C 100 Unit W MOSFET Absolute Maximum Ratings Symbol BVDSS ID Parameter Min Drain Source Voltage 1000 Typ Max Unit V Continuous Drain Current TC = 25C @ ID = 13A 26 A RDS(on) Drain-Source On State Resistance 0.7 Tjmax Operating Temperature 175 C Max Unit MOSFET Dynamic Characteristics Symbol Parameter Test Conditions Min Typ Ciss Input Capacitance Coss Output Capacitance VDS = 50V 460 Crss Reverse Transfer Capacitance f = 1 MHz 90 4000 Vgs = 0 pF MOSFET Thermal Characteristics Symbol Parameter Min Typ Max 0.16 0.17 RJC Thermal Resistance Junction to Case (per MOSFET) RJHS Thermal Resistance Junction to Heat Sink TJSTG Storage Temperature PDHS Maximum Power Dissipation @ TSINK = 25C 680 PDC Total Power Dissipation @ TC = 25C 1500 0.22 -55 to 150 Unit C/W C W Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-4972 Rev H 07-2014 Figure 1, DRF1201 Simplified Circuit Diagram The Simplified DRF1201 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitor (C1), the contribution to the internal parasitic loop inductance of the driver output is greatly reduced. This, coupled with the tight geometry of the hybrid, allows optimal gate drive to the MOSFET. This low parasitic approach, coupled with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the AntiRing Function, provide improved stability and control in Kilowatt to Multi-Kilowatt, high Frequency applications. Both the FN and IN pins are referenced to the Kelvin ground (SG.) The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary circuitry designed specifically for the ring abatement. The power drivers provide high current to the gate of the MOSFETS. DRF1201 10,000 CAPACITANCE (pf) Ciss 1000 500 Coss Crss 100 50 10 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 61.8e-3 94e-3 18.7e-3 65.2e-3F 256.3e-3F 7.8e-3F Figure 3a, Transient Thermal Impedance Model D = 0.9 0.16 0.14 0.7 0.12 0.10 0.5 Note: 0.08 0.3 0.06 t1 t2 0.1 0.02 t 0.05 10 -5 SINGLE PULSE Duty Factor D = 1 /t2 Peak T J = P DM x Z JC + T C 10-2 10-3 0.1 RECTANGULAR PULSE DURATION (SECONDS) Figure 3b, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 -4 1 050-4972 Rev H 07-2014 0.04 0 P DM ZJC, THERMAL IMPEDANCE (C/W) 0.18 DRF1201 Truth Table *Referenced to SG FN (pin 3)* IN (pin 4)* MOSFET HIGH HIGH ON HIGH LOW OFF LOW HIGH OFF LOW LOW ON The Function (FN, pin 3) is the invert or non-invert select Pin, it is Internally held high. 050-4972 Rev H 07-2014 Figure 4, DRF1201 Test Circuit The Test Circuit illustrated above was used to evaluate the DRF1201 (available as an evaluation Board DRF12XX / EVALSW.) The input control signal is applied to the DRF1201 via IN(4) and SG(5) pins using RG188. This provides excellent noise immunity and control of the signal ground currents. The +VDD inputs (2,6) are by-passed (C1, C2, C4-C9), this is in addition to the internal by-passing mentioned previously. The capacitors used for this function must be capable of supporting the RMS currents and frequency of the gate load. RL set for IDM at VDS max this load is used to evaluate the output performance of the DRF1201. DRF1201 Pin Assignments Pin 1 Ground Pin 2 +Vdd Pin 3 FN Pin 4 IN Pin 5 SG Pin 6 +Vdd Pin 7 Ground Pin 8 Source Pin 9 Drain Pin 10 Source All dimensions are .005 Figure 5, DRF1201 Mechanical Outline HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting flange is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. BeO substrate weight: 1.973g. Percentage of total module weight which is BeO: 31%. DRF1201 Disclaimer: The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer's and user's responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp