DRF1201
1000V, 26A, 30MHz
The DRF1201 hybrid includes a high power gate driver and the power
MOSFET. The driver output can be congured as Inverting and Non-
Inverting. It was designed to provide the system designer increased
exibility and lowered cost over a non-integrated solution.
TYPICAL APPLICATIONS
• ClassC,DandERFGenerators
•SwitchModePowerAmpliers
•PulseGenerators
• UltrasoundTransducerDrivers
•AcousticOpticalModulators
FEATURES
•SwitchingFrequency:DCTO30MHz
•LowPulseWidthDistortion
•SinglePowerSupply
•1VCMOSSchmittTriggerInput1V
Hysteresis
•InvertingNon-InvertingSelect
•RoHSCompliant
•SwitchingSpeed3-4ns
•BVds=1Kv
•Ids=26Aavg.
•Rds(on)≤.55Ohm
•PD=1100W
Symbol Parameter Min Typ Max Unit
VDD Supply Voltage 15 V
IN, FN Input Single Voltages -.7 to +5.5
IO PK Output Current Peak 8 A
TJMAX Operating Temperature 175 °C
MOSFET Driver Hybrid
DriverAbsoluteMaximumRatings
DriverSpecications
Symbol Parameter Min Typ Max Unit
VDD Supply Voltage 10 15 V
IN Input Voltage 3 5.5
IN(R) Input Voltage Rising Edge 3
ns
IN(F) Input Voltage Falling Edge 3
IDDQ Quiescent Current 2mA
IOOutput Current 8 A
Ciss Input Capacitance 3
RIN Input Parallel Resistance 1MΩ
VT(ON) Input, Low to High Out (See Truth Table) 0.8 1.1 V
VT(OFF) Input, High to Low Out (See Truth Table) 1.9 2.2
TDLY Time Delay (throughput) 38 ns
trRise Time 2.5
nstf Fall Time 2.5
TDProp. Delay 35
Microsemi Website - http://www.microsemi.com
050-4972 Rev H 07-2014
DRF1201
MOSFETAbsoluteMaximumRatings
Symbol Parameter Min Typ Max Unit
BVDSS Drain Source Voltage 1000 V
IDContinuous Drain Current TC = 25°C @ ID = 13A 26 A
RDS(on) Drain-Source On State Resistance 0.7 Ω
Tjmax Operating Temperature 175 °C
MOSFETDynamicCharacteristics
Symbol Parameter TestConditions Min Typ Max Unit
Ciss Input Capacitance Vgs = 0
VDS = 50V
f = 1 MHz
4000
pF
Coss Output Capacitance 460
Crss Reverse Transfer Capacitance 90
MOSFETThermalCharacteristics
Symbol Parameter Min Typ Max Unit
RθJC Thermal Resistance Junction to Case (per MOSFET) 0.16 0.17 °C/W
RθJHS Thermal Resistance Junction to Heat Sink 0.22
TJSTG Storage Temperature -55 to 150 °C
PDHS Maximum Power Dissipation @ TSINK = 25°C 680
W
PDC Total Power Dissipation @ TC = 25°C 1500
Microsemireservestherighttochange,withoutnotice,thespecicationsandinformationcontainedherein.
050-4972 Rev H 07-2014
Figure1,DRF1201SimpliedCircuitDiagram
The Simplied DRF1201 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitor (C1), the contribution to
the internal parasitic loop inductance of the driver output is greatly reduced. This, coupled with the tight geometry of the hybrid, allows optimal
gate drive to the MOSFET. This low parasitic approach, coupled with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the Anti-
Ring Function, provide improved stability and control in Kilowatt to Multi-Kilowatt, high Frequency applications. Both the FN and IN pins are
referenced to the Kelvin ground (SG.) The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary
circuitry designed specically for the ring abatement. The power drivers provide high current to the gate of the MOSFETS.
Symbol Parameter Min Typ Max Unit
Cout Output Capacitance 2500 pF
Rout Output Resistance .8 Ω
Lout Output Inductance 3 nH
FMAX Operating Frequency CL = 3000nF + 50Ω 30
MHz
FMAX Operating Frequency RL = 50Ω 50
DriverOutputCharacteristics
Symbol Parameter Min Typ Max Unit
RθJC Thermal Resistance Junction to Case 1.5 °C/W
RθJHS Thermal Resistance Junction to Heat Sink 2.5
TJSTG Storage Temperature -55 to 150 °C
PDJHS Maximum Power Dissipation @ TSINK = 25°C 60
W
PDJC Total Power Dissipation @ TC = 25°C 100
DriverThermalCharacteristics
DRF1201
050-4972 Rev H 07-2014
CAPACITANCE (pf)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure2,TypicalCapacitancevs.Drain-to-SourceVoltage
10,000
1000
500
100
50
10
.1 1 10 100 200
Coss
Ciss
Crss
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
10-4 10-3 10-2 0.1 1
10-5
ZθJC, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure3b,MaximumEffectiveTransientThermalImpedance,Junction-To-CasevsPulseDuration
0.5
0.1
0.05
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
61.8e-3Ω
94e-3Ω
18.7e-3Ω
65.2e-3F
256.3e-3F
7.8e-3F
Figure3a,TransientThermalImpedanceModel
TheFunction(FN,pin3)istheinvertornon-invertselectPin,itisInternallyheldhigh.
DRF1201
050-4972 Rev H 07-2014
The Test Circuit illustrated above was used to evaluate the DRF1201 (available as an evaluation Board DRF12XX / EVALSW.) The input con-
trol signal is applied to the DRF1201 via IN(4) and SG(5) pins using RG188. This provides excellent noise immunity and control of the signal
ground currents.
The +VDD inputs (2,6) are by-passed (C1, C2, C4-C9), this is in addition to the internal by-passing mentioned previously. The capacitors used
for this function must be capable of supporting the RMS currents and frequency of the gate load. RL set for IDM at VDS max this load is used to
evaluate the output performance of the DRF1201.
Figure4,DRF1201TestCircuit
TruthTable*ReferencedtoSG
FN(pin3)* IN(pin4)* MOSFET
HIGH HIGH ON
HIGH LOW OFF
LOW HIGH OFF
LOW LOW ON
DRF1201
Figure5,DRF1201MechanicalOutline
Alldimensionsare±.005
Pin Assignments
Pin 1 Ground
Pin 2 +Vdd
Pin 3 FN
Pin 4 IN
Pin 5 SG
Pin 6 +Vdd
Pin 7 Ground
Pin 8 Source
Pin 9 Drain
Pin 10 Source
HAZARDOUSMATERIALWARNING
The ceramic portion of the device between leads and mounting ange is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during
handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. BeO substrate weight:
1.973g. Percentage of total module weight which is BeO: 31%.
The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFI-
DENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the
express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then
the terms of such Agreement will also apply . This document and the information contained herein may not be modied, by any person other
than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or
conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license
under such intellectual property rights must be approved by Microsemi in writing signed by an ofcer of Microsemi.
Microsemi reserves the right to change the conguration, functionality and performance of its products at anytime without any notice. This prod-
uct has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications.
Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi
products including liability or warranties relating to tness for a particular purpose, merchantability, or infringement of any patent, copyright or
other intellectual property right. Any performance specications believed to be reliable but are not veried and customer or user must conduct
and complete all performance and other testing of this product as well as any user or customers nal application. User or customer shall not rely
on any data and performance specications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently
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kind including for consequential, incidental and punitive damages as well as lost prot. The product is subject to other terms and conditions which
can be located on the web at http://www.microsemi.com/legal/tnc.asp
Disclaimer:
DRF1201
