MAC97A6/8
TRIACS
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
www.unisonic.com.tw
QW-R401-023,C
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC SYMBOL RATINGS UNIT
MAC97A6 400 V
Repetitive Peak off-State Voltage (T
J
=25 ~125 )
℃
MAC97A8 V
DRM
600 V
RMS on-State Current (Full Sine Wave, T
LEAD
≤50 )
℃
I
T(RMS)
0.6 A
t=20ms 8.0 A Non-Repetitive Peak on-State Current
(Full Sine Wave, T
J
=25
℃
Prior to Surge) t=16.7ms I
TSM
8.8 A
I
2
t for Fusing (t=10ms) I
2
t 0.32 A
2
s
T2+G+ 50 A/µs
T2+G- 50 A/µs
T2-G- 50 A/µs
Repetitive Rate of Rise of on-State Current After
Triggering(I
TM
=1.0A, I
G
=0.2A, dI
G
/dt=0.2A/µs)
T2-G+
dI
T
/dt
10 A/µs
Peak Gate Voltage [ t=2µs (max) ] V
GM
5 V
Peak Gate Current [ t=2µs (max) ] I
GM
1 A
Peak Gate Power [ t=2µs (max) ] P
GM
5 W
Average Gate Power [ Tcase=80
℃
, t=2us (max) ] P
G(AV)
0.1 W
Operating Junction Temperature T
J
-40~+125
℃
Storage Temperature T
STG
-40~+150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-92 150
℃
/W
Thermal Resistance Junction to Ambient SOT-223
θ
JA
165
℃
/W
STATIC CHARACTERISTICS
(T
J
=25
℃
, unless otherwise specified)
DYNAMIC CHARACTERISTICS
(T
J
=25
℃
, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
T2+G+ 1 5 mA
T2+G- 2 5 mA
T2-G- 2 5 mA
Gate Trigger Current I
GT
V
D
=12V, I
T
=0.1A
T2-G+ 4 7 mA
T2+G+ 1 10 mA
T2+G- 5 10 mA
T2-G- 1 10 mA
Latching Current I
L
V
D
=12V, I
GT
=0.1A
T2-G+ 2 10 mA
Holding Current I
H
V
D
=12V, I
GT
=0.1A 1 10 mA
On-State Voltage V
T
I
T
=0.85A 1.4 1.9 V
V
D
=12V,I
T
=0.1A 0.9 2 V
Gate Trigger Voltage V
GT
V
D
=V
DRM
, I
T
=0.1A, T
J
=110
℃
0.1 0.7 V
Off-State Leakage Current I
D
V
D
=V
DRM(MAX)
, T
J
=110
℃
3 100 µA
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Critical Rate of Rise of Off-State
Voltage dV
D
/dt V
D
=67% of V
DRM(max)
,
Tcase=110 ,
℃
Exponential
Waveform, Gate Open Circuit
30 45 V/µs
Critical Rate of Rise of Commutation
Voltage dVcom/dt
V
D
=Rated V
DRM
, Tcase=50 ,
℃
l
TM
=0.84A, commutating
dl/dt=0.3A/ms
5 V/µs
Gate Controlled Turn-On Time tgt I
TM
=1.0A,V
D
=V
DRM(max)
,
I
G
=25mA,dI
G
/dt=5A/µs 2 µs