STEALTHERectifier 30 A, 600 V ISL9R3060G2-F085 Description The ISL9R3060G2-F085 is STEALTH diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. www.onsemi.com 1 2 1. Cathode 2. Anode Features * * * * * High Speed Switching (trr = 31 ns(Typ.) @ IF = 30 A) Low Forward Voltage (VF = 2.4 V(Max.) @ IF = 30 A) Avalanche Energy Rated AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant TO-247-2LD CASE 340CL MARKING DIAGRAM Applications * * * * Automotive DCDC converter Automotive On Board Charger Switching Power Supply Power Switching Circuits $Y&Z&3&K R3060G2 $Y &Z &3 &K R3060G2 = ON Semiconductor Logo = Assembly Plant Code = Date Code (Year & Week) = Lot Traceability Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2013 March, 2020 - Rev. 7 1 Publication Order Number: ISL9R3060G2-F085/D ISL9R3060G2-F085 ABSOLUTE MAXIMUM RATINGS TC = 25C unless otherwise noted Parameter Symbol Ratings Units VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V VR IF(AV) Average Rectified Forward Current @ TC = 125_C 30 A IFSM Non-repetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) 325 A EAVL Avalanche Energy (1 A, 40 mH) 20 mJ -55 to +175 _C Max Units 0.58 C/W 45 C/W TJ, TSTG Operating Junction and Storage Temperature THERMAL CHARACTERISTICS TC = 25C unless otherwise noted Parameter Symbol RJC Maximum Thermal Resistance, Junction to Case RJA Maximum Thermal Resistance, Junction to Ambient PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Tube Quantity R3060G2 ISL9R3060G2-F085 TO-247 - 30 ELECTRICAL CHARACTERISTICS TC = 25C unless otherwise noted Symbol IR VFM1 trr2 ta tb Qrr EAVL Conditions Parameter Instantaneous Reverse Current Instantaneous Forward Voltage Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Avalanche Energy VR = 600 V Min. Typ. Max Units TC = 25C - - 100 mA TC = 175C - - 2 mA TC = 25C - 2.0 2.4 V TC = 175C - 1.5 2.2 V IF = 1 A, di/dt = 200 A/ms, VCC = 390 V TC = 25C - 23 35 ns IF = 30 A, di/dt = 200 A/ms, VCC = 390 V TC = 25C TC = 175C - 31 135 45 - ns ns IF = 30 A, di/dt = 200 A/ms, VCC = 390 V TC = 25C - - - 18 13 48 - - - ns ns nC 20 - - mJ IF = 30 A IAV =1.0 A, L = 40 mH 1. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2%. 2. Guaranteed by design. www.onsemi.com 2 ISL9R3060G2-F085 TEST CIRCUIT WAVEFORMS Figure 1. Test Circuit Waveforms www.onsemi.com 3 ISL9R3060G2-F085 TYPICAL PERFORMANCE CHARACTERISTICS 1000 400 10 TC = 125C 1 0.1 TC = 25C 0.1 1 2 3 4 10 0.1 TC = 25C 0.01 1E-3 5 TC = 125C 1 0 100 200 400 500 600 Reverse Voltage, VR [V] Figure 2. Typical Forward Voltage Drop vs. Forward Current Figure 3. Typical Reverse Current vs. Reverse Voltage 200 Typical Capacitance at 10 V = 91 pF Reverse Recovery Time, trr [ns] IF = 30 A 400 200 0 0.1 1 10 150 TC = 175C TC = 125C 100 50 TC = 25C 0 100 100 200 300 400 500 di/dt [A/ms] Reverse Voltage, VR [V] Figure 4. Typical Junction Capacitance Figure 5. Typical Reverse Recovery Time vs. di/dt 40 Average Forward Current, IF(AV) [A] 20 Reverse Recovery Current, Irr [A] 300 Forward Voltage, VF [V] 600 Capacitances , CJ [pF] TC = 175C 100 TC = 175C Reverse Current , IR [mA] Forward Current, IF [A] 100 IF = 30 A 15 TC = 175C 10 TC = 125C 5 TC = 25C 0 100 200 300 400 30 20 10 0 500 25 50 75 100 125 150 175 di/dt [A/ms] Case temperature, TC [C] Figure 6. Typical Reverse Recovery Current vs. di/dt Figure 7. Forward Current Derating Curve www.onsemi.com 4 ISL9R3060G2-F085 Reverse Recovery Charge, Qrr [nC] 1000 IF = 30 A TC = 175C 750 TC = 125C 500 250 TC = 25C 0 100 200 300 400 500 di/dt [A/ms] Figure 8. Reverse Recovery Charge 1 ZthJC(t), Thermal Response D=0.5 0.1 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 single pulse 1. ZthJC(t) = 0.58C/W Typ. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM x ZthJC(t) 0.001 -5 10 10 -4 -3 10 -2 -1 10 10 0 10 10 1 2 10 t1, Square Wave Pulse Duration [sec] Figure 9. Transient Thermal Response Curve STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO-247-2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 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