© Semiconductor Components Industries, LLC, 2013
March, 2020 − Rev. 7
1Publication Order Number:
ISL9R3060G2−F085/D
STEALTHERectifier
30 A, 600 V
ISL9R3060G2-F085
Description
The ISL9R3060G2−F085 is STEALTH diode optimized for low
loss performance in high frequency hard switched applications. The
STEALTH family exhibits low reverse recovery current (IRRM) and
exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost diode in
power supplies and other power switching applications. The low IRRM
and short ta phase reduce loss in switching transistors. The soft
recovery minimizes ringing, expanding the range of conditions under
which the diode may be operated without the use of additional snubber
circuitry. Consider using the STEALTH diode with an SMPS IGBT to
provide the most efficient and highest power density design at lower
cost.
Features
•High Speed Switching (trr = 31 ns(Typ.) @ IF = 30 A)
•Low Forward Voltage (VF = 2.4 V(Max.) @ IF = 30 A)
•Avalanche Energy Rated
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•Automotive DCDC converter
•Automotive On Board Charger
•Switching Power Supply
•Power Switching Circuits
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MARKING DIAGRAM
TO−247−2LD
CASE 340CL
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
$Y&Z&3&K
R3060G2
12
1. Cathode 2. Anode
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Date Code (Year & Week)
&K = Lot Traceability Code
R3060G2 = Specific Device Code
ISL9R3060G2−F085
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2
ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted
Symbol Parameter Ratings Units
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current @ TC = 125_C30 A
IFSM Non−repetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) 325 A
EAVL Avalanche Energy (1 A, 40 mH) 20 mJ
TJ, TSTG Operating Junction and Storage Temperature −55 to +175 _C
THERMAL CHARACTERISTICS TC = 25°C unless otherwise noted
Symbol Parameter Max Units
RθJC Maximum Thermal Resistance, Junction to Case 0.58 °C/W
RθJA Maximum Thermal Resistance, Junction to Ambient 45 °C/W
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking Device Package Tube Quantity
R3060G2 ISL9R3060G2−F085 TO−247 −30
ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Typ. Max Units
IRInstantaneous Reverse Current VR = 600 V TC = 25°C− − 100 mA
TC = 175°C− − 2 mA
VFM1Instantaneous Forward Voltage IF = 30 A TC = 25°C−2.0 2.4 V
TC = 175°C−1.5 2.2 V
trr2Reverse Recovery Time IF = 1 A, di/dt = 200 A/ms,
VCC = 390 V
TC = 25°C−23 35 ns
IF = 30 A, di/dt = 200 A/ms,
VCC = 390 V
TC = 25°C
TC = 175°C
−31
135
45
−
ns
ns
ta
tb
Qrr
Reverse Recovery Time
Reverse Recovery Charge
IF = 30 A, di/dt = 200 A/ms,
VCC = 390 V
TC = 25°C−
−
−
18
13
48
−
−
−
ns
ns
nC
EAVL Avalanche Energy IAV =1.0 A, L = 40 mH 20 − − mJ
1. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2%.
2. Guaranteed by design.
ISL9R3060G2−F085
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TEST CIRCUIT WAVEFORMS
Figure 1. Test Circuit Waveforms
ISL9R3060G2−F085
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4
TYPICAL PERFORMANCE CHARACTERISTICS
Forward Voltage, VF [V]
Forward Current, IF [A]
Figure 2. Typical Forward Voltage Drop
vs. Forward Current
Figure 3. Typical Reverse Current vs.
Reverse Voltage
Reverse Voltage, VR [V]
Reverse Current , IR [mA]
Reverse Voltage, VR [V]
Capacitances , CJ [pF]
Figure 4. Typical Junction Capacitance Figure 5. Typical Reverse Recovery Time
vs. di/dt
Reverse Recovery Time, trr [ns]
di/dt [A/ms]
di/dt [A/ms]
Reverse Recovery Current, Irr [A]
Figure 6. Typical Reverse Recovery
Current vs. di/dt
Figure 7. Forward Current Derating Curve
Case temperature, TC [°C]
Average Forward Current, IF(AV) [A]
0.1
0.1
1
10
100
400
0 400 500 600
1E−3
0.01
0.1
1
10
100
1000
400
0
50
100
150
200
0.1 1 10 100
0
200
400
600
Typical Capacitance
at 10 V = 91 pF
0
10
20
30
40
0
5
10
15
20
12 345
TC = 125°C
TC = 175°C
TC = 25°C
100 200 300
TC = 175°C
TC = 125°C
TC = 25°C
IF = 30 A
TC = 175°C
TC = 125°C
TC = 25°C
100 200 300
IF = 30 A
TC = 175°C
TC = 125°C
TC = 25°C
500
400
100 200 300 500 25 50 75 100 125 150 175
ISL9R3060G2−F085
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5
di/dt [A/ms]
Figure 8. Reverse Recovery Charge
t1, Square Wave Pulse Duration [sec]
ZthJC(t), Thermal Response
Figure 9. Transient Thermal Response Curve
0
250
500
750
1000
10−510−410−310−210−1100101102
0.001
0.01
0.1
1
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
100 200 300 400 500
TC = 175°C
TC = 125°C
TC = 25°C
IF = 30 A
PDM
t1
t2
1. ZthJC(t) = 0.58°C/W Typ.
2. Duty Factor, D = t1/t2
3. TJM − TC = PDM × ZthJC(t)
Reverse Recovery Charge, Qrr [nC]
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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