830 series
ISSUE 6 - JANUARY 2002
2
PART Capacitance (pF)
VR=2V, f=1MHz
Min Q
VR=3V
f=50MHz
Capacitance Ratio
C2/C
20
at f=1MHz
MIN. NOM. MAX. MIN. MAX.
829A 7.38 8.2 9.02 250 4.3 5.8
829B 7.79 8.2 8.61 250 4.3 5.8
830A 9.0 10.0 11.0 300 4.5 6.0
830B 9.5 10.0 10.5 300 4.5 6.0
831A 13.5 15.0 16.5 300 4.5 6.0
831B 14.25 15.0 15.75 300 4.5 6.0
832A 19.8 22.0 24.2 200 5.0 6.5
832B 20.9 22.0 23.1 200 5.0 6.5
833A 29.7 33.0 36.3 200 5.0 6.5
833B 31.35 33.0 34.65 200 5.0 6.5
834A 42.3 47.0 51.7 200 5.0 6.5
834B 44.65 47.0 49.35 200 5.0 6.5
835A 61.2 68.0 74.8 100 5.0 6.5
835B 64.6 68.0 71.4 100 5.0 6.5
836A 90.0 100.0 110.0 100 5.0 6.5
836B 95.0 100.0 105.0 100 5.0 6.5
TUNING CHARACTERISTICS at Tamb = 25°C
PARAMETER SYMBOL MAX UNIT
Forward current IF200 mA
Power dissipation at Tamb = 25⬚C SOT23 Ptot 330 mW
Power dissipation at Tamb = 25⬚C SOD323 Ptot 330 mW
Power dissipation at Tamb = 25⬚C SOD523 Ptot 250 mW
Operating and storage temperature range -55 to +150 ⬚C
ABSOLUTE MAXIMUM RATINGS
PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Reverse breakdown voltage IR= 10uA 25 V
Reverse voltage leakage VR= 20V 0.2 20 nA
Temperature coefficient of capacitance VR= 3V, f = 1MHz 300 400 ppCm/⬚C
ELECTRICAL CHARACTERISTICS at Tamb = 25°C