EGP30A-EGP30K EGP30A - EGP30K Features * Glass passivated cavity-free junction. * High surge current capability. * Low leakage current. * Superfast recovery time for high efficiency. * Low forward voltage, high current capability. DO-201AD COLOR BAND DENOTES CATHODE Fast Rectifiers (Glass Passivated) Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Parameter Units 30A 30B 30C 30D 30F 30G 30J 30K 50 150 200 300 800 VR Breakdown Voltage IF(AV) Average Rectified Forward Current, .375 " lead length @ TA = 55C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range -65 to +150 C Operating Junction Temperature -65 to +150 C IFSM Tstg TJ 100 400 600 V 3.0 A 125 A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units PD Power Dissipation 6.25 W RJA Thermal Resistance, Junction to Ambient 20 C/W RJL Thermal Resistance, Junction to Lead 8.5 C/W Electrical Characteristics Symbol TA = 25C unless otherwise noted Device Parameter 30A 30B VF Forward Voltage @ 3.0 A trr Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Reverse Current @ rated VR TA = 25C TA = 125C Total Capacitance VR = 4.0 V, f = 1.0 MHz IR CT 2001 Fairchild Semiconductor Corporation 30C 30D 0.95 Units 30F 30G 30J 1.25 50 1.7 V 75 ns A A 5.0 100 95 30K 75 pF EGP30A - EGP30K, Rev. C1 EGP30A-EGP30K 3 2 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.0mm) LEAD LENGTHS 1 0 0 25 50 75 100 125 Ambient Temperature [C] 150 175 Figure 1. Forward Current Derating Curve Peak Forward Surge Current, IFSM [A] Average Rectified Forward Current, IF [A] Typical Characteristics 125 100 75 50 25 0 1 2 100 5 10 20 50 Number of Cycles at 60Hz 100 T A = 150 C EGP30A-EGP30D 10 Reverse Current, IR [mA] Forward Current, IF [A] 150 Figure 2. Non-Repetitive Surge Current 50 10 175 T A= 25 C T A = 150 C 1 EGP30F-EGP30K 0.1 s Pulse Width = 300 2% Duty Cycle 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 Forward Voltage, VF [V] 1.6 1.8 Figure 3. Forward Voltage Characteristics T A = 125 C 1 0.1 TA = 75 C 0.01 TA = 25 C 0.001 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs Reverse Voltage Total Capacitance, C T [pF] 210 180 150 120 EGP30A-EGP30D 90 EGP30F-EGP30K 60 30 0 0.1 1 10 100 Reverse Voltage, V R [V] 1000 Figure 5. Total Capacitance 50 NONINDUCTIVE 50 NONINDUCTIVE +0.5A trr (-) DUT 50V (approx) 50 NONINDUCTIVE Pulse Generator (Note 2) 0 -0.25A (+) OSCILLOSCOPE (Note 1) NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms. -1.0A 1.0cm SET TIME BASE FOR 5/ 10 ns/ cm Reverse Recovery Time Characterstic and Test Circuit Diagram 2001 Fairchild Semiconductor Corporation EGP30A - EGP30K, Rev. C1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4