IRANSYS FLECTRONICS LIMITED @ Designed for Complementary Use with TIP140, TIP141 and TIP142 @ 125 W at 25C Case Temperature 10 A Continuous Collector Current @ Minimum he of 1000 at4V,5A absolute maximum ratings TIP 145, TIP146, TIP 147 PNP SILICON POWER DARLINGTONS SOT-93 PACKAGE (TOP VIEW) 2O O Pin 2 is in electrical contact with the mounting base. at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIP145 -60 Collector-base voltage (I = 0) TIP146 Vopo -80 Vv TIP 147 -100 TIP145 -60 Collector-emitter voltage (Ip = 0) TIP146 VcEO -80 Vv TIP 147 -100 Emitter-base voltage VeBo 5 Vv Continuous collector current fe -10 A Peak collector current (see Note 1) lom -15 A Continuous base current lp -0.5 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Prot 125 WwW Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Prot 3.5 WwW Unclamped inductive load energy (see Note 4) YoLlo? 100 mJ Operating junction temperature range T; -65 to +150 C Storage temperature range Tstg -65 to +150 C Lead temperature 3.2 mm from case for 10 seconds Ty 260 C NOTES: 1. This value applies for tp < 0.3 ms, duty cycle < 10%. 2. Derate linearly to 150C case temperature at the rate of 1 W/C. 3. Derate linearly to 150C free air temperature at the rate of 28 mW/C. 4. VBE(ott) =0, Rs = 0.1 Q, Voc =-20V. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, Ipjon) = -5 MA, Ree = 100 Q,TIP145, TIP 146, TIP147 PNP SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN | TYP | MAX | UNIT . TIP 145 -60 V Collector-emitter Ig= -30mA Ip =0 TIP146 80 V (BR)CEO breakdown voltage om Be (see Note 5) TIP147 -100 + Voce = -30 Vv lB = 0 TIP145 -2 | Collector-emitter Vee = -40V Ip =0 TIP146 2 | ma CEO cut-off current cee Be VoE= -50V lp =O TIP 147 -2 Vop= -60 V le =0 TIP145 -1 | Collector cut-off Vv 80 V Ip =0 TIP146 1 A =: = - m CBO current cB E Vop = -100 V lp =0 TIP 147 -1 | Emitter cut-off Vea= -5V | 0 5 mA FBO current EB~ a Forward current Vecpe= 4V Ic = -5A 1000 Nee . (see Notes 5 and 6) transfer ratio Vecpe= 4V Ic =-10A 500 Collector-emitter Ip= -10mA Ic = -5A -2 VocE(sat) . (see Notes 5 and 6) Vv saturation voltage Ip= -40mA Ic =-10A 3 Vee soemnitter Voe= -4V Ip =-10A (see Notes 5 and 6) 3 |v BE voltage CE ce Parallel diode Vec le= -10A lp =O (see Notes 5 and 6) -3.5 Vv forward voltage NOTES: 5. These parameters must be measured using pulse techniques, t, = 300 us, duty cycle < 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS t MIN | TYP | MAX | UNIT ton Turn-on time Ic =-10A IB(on) = -40 mA IBott) = 40 mA 0.9 us tott Turn-off time Veevotty = 4.2 V RL =3Q tp = 20 us, de < 2% 11 Us t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.TIP 145, TIP146, TIP 147 PNP SILICON POWER DARLINGTONS - Typical DC Current Gain Neg 10000 1000 100 V -0-5 t cE TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN VS COLLECTOR CURRENT = -4V = 300 us, duty cycle < 2% -1-0 Ty = -40C Ty= 25C T, = 100C |, - Collector Current - A Figure 1. Vee(sat - Base-Emitter Saturation Voltage - V -3-0 Vee(eat - COllector-Emitter Saturation Voltage - V -20 COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -2-0 , , , t, = 300 us, duty cycle < 2% | I, =!_/100 1-5 7 YH, 40 A Ly Lane < PL) 05 Ne NA NN Nt. - -40C ST,= 25C) NT, = 100C 0 Ld -0-5 -1-0 -10 -20 I, - Collector Current - A Figure 2. BASE-EMITTER SATURATION VOLTAGE VS COLLECTOR CURRENT Tg = -40C To= 25C WN 1 -2-5}T, = 100C \N / A 50 \ \ A -2. Y/ yo HY La LO |) 1-5 -0-5 I, =l,/100 t, = 900 ps, duty cycle < 2% 0 1 1 dee 1 1 1 -0-5 -1-0 -10 -20 |, - Collector Current - A Figure 3.TIP145, TIP 146, TIP147 PNP SILICON POWER DARLINGTONS -100 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA < = -10 e 6 S 3 9 oO 5-1-0 TIP145 TIP146 TIP 147 -0-1 -1-0 -10 -100 -1000 Vog - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION VS CASE TEMPERATURE 140 = 120 5 % 100 2 2 5 80 N = \ E 60 z \ 8 40 \ 0 20 N 0 0 25 50 75 100 125 150 T, - Case Temperature - C Figure 5.TIP145, TIP 146, TIP147 PNP SILICON POWER DARLINGTONS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4.90 4,70 15,2 137 oy) ig 4,1 _ _ > * a0 NY 14,7 3,95 1,17 : 415 | 16,2 MAX. 12,2 MAX. O | 31,0 TYP. = ___sCOW 18,0 TYP. 1,30 0,78 a + ae 11 0,50 2,50 TYP. > k ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab.