MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS14KM-9A FS14KM-9A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS14KM-9A OUTLINE DRAWING Dimensions in mm 3 0.3 6.5 0.3 2.8 0.2 3.2 0.2 3.6 0.3 14 0.5 15 0.3 10 0.3 1.1 0.2 1.1 0.2 0.75 0.15 2.6 0.2 10V DRIVE VDSS ............................................................................... 450V rDS (ON) (MAX) .............................................................. 0.52 ID ......................................................................................... 14A 0.75 0.15 2.54 0.25 4.5 0.2 2.54 0.25 GATE DRAIN SOURCE TO-220FN APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc. MAXIMUM RATINGS Symbol (Tc = 25C) Parameter Conditions VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA PD Avalanche current (Pulsed) Maximum power dissipation Tch Tstg Channel temperature Storage temperature Viso Isolation voltage AC for 1minute, Terminal to case Weight Typical value -- VGS = 0V VDS = 0V L = 200H Ratings Unit 450 30 V V 14 42 A A 14 35 A W -55 ~ +150 -55 ~ +150 C C 2000 V 2.0 g Sep. 2001 MITSUBISHI Nch POWER MOSFET FS14KM-9A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS V (BR) GSS Drain-source breakdown voltage Gate-source breakdown voltage I GSS I DSS Gate-source leakage current Drain-source leakage current VGS (th) Gate-source threshold voltage rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance t d (on) tr Turn-on delay time Rise time t d (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) Thermal resistance Limits Test conditions ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 7A, VGS = 10V, R GEN = RGS = 50 IS = 7A, VGS = 0V Channel to case Unit Min. Typ. Max. 450 30 -- -- -- -- V V -- -- -- -- 10 1 A mA 2.5 3.0 3.5 V -- -- 0.41 2.87 0.52 3.64 V 7.2 -- 12.0 1500 -- -- S pF -- -- 160 35 -- -- pF pF -- -- 25 40 -- -- ns ns -- 190 -- ns -- -- 50 1.5 -- 2.0 ns V -- -- 3.57 C/W PERFORMANCE CURVES 40 30 20 10 0 MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 0 50 100 150 101 100s 7 5 3 2 1ms 10ms 100 7 5 3 2 DC 10-1 7 5 3 200 tw = 10s TC = 25C Single Pulse 2 3 5 7 101 2 3 2 3 5 7 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 50 20 TC = 25C Pulse Test VGS = 20V,10V,8V,6V 40 VGS = 20V,10V,8V 30 6V 20 5V 10 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 5 7 102 16 TC = 25C Pulse Test 12 5V 8 4 PD = 35W PD = 35W 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS14KM-9A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 TC = 25C Pulse Test 32 24 16 ID = 25A 20A 8 14A DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 40 TC = 25C Pulse Test 1.6 1.2 0.8 VGS = 10V 20V 0.4 7A 0 0 4 8 12 16 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 7 5 24 16 TC = 25C VDS = 10V Pulse Test 8 0 0 4 8 12 16 3 2 101 7 5 125C 3 2 75C TC = 25C 100 0 10 20 2 5 7 101 3 2 3 5 7 102 DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 Coss 102 7 5 3 2 Tch = 25C VGS = 0V f = 1MHz Crss 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) Tch = 25C VGS = 10V VDD = 200V RGEN = RGS = 50 7 5 Ciss 103 7 5 3 2 101 7 5 3 VDS = 10V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 5 3 2 CAPACITANCE Ciss, Coss, Crss (pF) FORWARD TRANSFER ADMITTANCE yfs (S) 32 SWITCHING TIME (ns) DRAIN CURRENT ID (A) 40 3 td(off) 2 102 7 5 tf 3 td(on) 2 101 100 tr 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS14KM-9A HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) 400V 200V VDS =100V 12 8 4 TCh = 25C ID = 14A 0 20 40 60 80 25C 16 8 VGS = 0V Pulse Test 1.6 0.8 2.4 3.2 4.0 ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 7A Pulse Test 100 7 5 3 2 -50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) VDS = 10V ID = 1mA 4.0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) 0.4 0 SOURCE-DRAIN VOLTAGE VSD (V) 2 1.4 75C 24 GATE CHARGE Qg (nC) 3 10-1 TC = 125C 0 101 7 5 32 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) 40 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE Zth (ch -c) (C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 2 = 0.5 100 = 0.2 7 5 = 0.1 3 2 10-1 7 5 3 2 PDM = 0.05 tw = 0.02 = 0.01 T D= tw T Single Pulse 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep. 2001