MITSUBISHI Nch POWER MOSFET
FS14KM-9A
HIGH-SPEED SWITCHING USE
Sep. 2001
2.6 ± 0.2
15 ± 0.314 ± 0.5
10 ± 0.3 2.8 ± 0.2
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
4.5 ± 0.2
0.75 ± 0.15
3 ± 0.33.6 ± 0.3
6.5 ± 0.3
➀➁➂
➁
➀
➂
➀
GATE
➁
DRAIN
➂
SOURCE
MITSUBISHI Nch POWER MOSFET
FS14KM-9A
HIGH-SPEED SWITCHING USE
450
±30
14
42
14
35
–55 ~ +150
–55 ~ +150
2000
2.0
VGS = 0V
VDS = 0V
L = 200µH
AC for 1minute, Terminal to case
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
V
V
A
A
A
W
°C
°C
V
g
VDSS
VGSS
ID
IDM
IDA
PD
Tch
Tstg
Viso
—
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
FS14KM-9A OUTLINE DRAWING Dimensions in mm
APPLICATION
SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
TO-220FN
●10V DRIVE
●VDSS ............................................................................... 450V
●rDS (ON) (MAX) ..............................................................0.52Ω
●ID ......................................................................................... 14A
MITSUBISHI Nch POWER MOSFET
FS14KM-9A
HIGH-SPEED SWITCHING USE
Sep. 2001
—
—
—
—
3.0
0.41
2.87
12.0
1500
160
35
25
40
190
50
1.5
—
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 450V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 7A, VGS = 10V
ID = 7A, VGS = 10V
ID = 7A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50Ω
IS = 7A, VGS = 0V
Channel to case
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
450
±30
—
—
2.5
—
—
7.2
—
—
—
—
—
—
—
—
—
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
—
—
±10
1
3.5
0.52
3.64
—
—
—
—
—
—
—
—
2.0
3.57
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
PERFORMANCE CURVES
0
10
20
30
40
50
0 20050 100 150
10
–1
7
2
5
3
10
0
7
2
5
3
10
1
7
2
5
3
5
3
T
C
= 25°C
Single Pulse
100µs
tw =
10µs
DC
1ms
10ms
10
1
3572
10
2
357 72352
0
10
20
30
40
50
0 1020304050
V
GS
= 20V,10V,8V
P
D
= 35W
T
C
= 25°C
Pulse Test
5V
6V
0
4
8
12
16
20
0 4 8 121620
P
D
= 35W
V
GS
= 20V,10V,8V,6V
T
C
= 25°C
Pulse Test
5V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
POWER DISSIPATION PD (W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
MITSUBISHI Nch POWER MOSFET
FS14KM-9A
HIGH-SPEED SWITCHING USE
Sep. 2001
0
8
16
24
32
40
048121620
T
C
= 25°C
Pulse Test
I
D
= 25A
20A
14A
7A
0
0.4
0.8
1.2
1.6
2.0
10
–1
2
10
0
357 2
10
1
357 2
10
2
357
T
C
= 25°C
Pulse Test
V
GS
= 10V
20V
0
8
16
24
32
40
0 4 8 12 16 20
T
C
= 25°C
V
DS
= 10V
Pulse Test
10
0
10
2
10
1
23 57 23 57
10
0
10
1
2
3
5
7
10
2
2
3
5
7V
DS
= 10V
Pulse Test
T
C
= 25°C
75°C
125°C
10
0
357
10
1
32257
10
2
323257
10
1
3
2
5
7
10
2
3
5
7
2
10
3
3
5
7
2
3
5
Tch = 25°C
V
GS
= 0V
f = 1MHz
Ciss
Coss
Crss
100
10
2
10
1
23 57 23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7Tch = 25°C
V
GS
= 10V
V
DD
= 200V
R
GEN
= R
GS
= 50
Ω
t
d(off)
t
d(on)
t
f
t
r
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
MITSUBISHI Nch POWER MOSFET
FS14KM-9A
HIGH-SPEED SWITCHING USE
Sep. 2001
0
1.0
2.0
3.0
4.0
5.0
–50 0 50 100 150
VDS = 10V
ID = 1mA
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
VGS = 0V
ID = 1mA
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
–50 0 50 100 150
VGS = 10V
ID = 7A
Pulse Test
0
4
8
12
16
20
0 20406080100
TCh = 25°C
ID = 14A
VDS =100V
200V
400V
0
8
16
24
32
40
00.8 1.6 2.4 3.2 4.0
VGS = 0V
Pulse Test
TC = 125°C
75°C
25°C
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
–4
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
PDM
tw
D
=
T
tw
T
D = 1.0
= 0.5
= 0.2
= 0.1
Single Pulse
= 0.05
= 0.02
= 0.01
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g (nC)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE VSD (V)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH tw (s)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
SOURCE CURRENT IS (A)
