NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 D NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES UE * This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz * Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V * 3-pin power minimold (34 PKG) Part Number NESG270034 O NT IN ORDERING INFORMATION Order Number Package NESG270034-AZ Quantity 3-pin power minimold (34 PKG) (Pb-Free) NESG270034-T1 Note NESG270034-T1-AZ 25 pcs Supplying Form * Magazine case (Non reel) 1 kpcs/reel * 12 mm wide embossed taping * Pin 2 (Emitter) face the perforation side of the tape Note Contains Lead in the part except the electrode terminals. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (T A = +25C) Symbol Ratings Unit Collector to Base Voltage VCBO 25 V Collector to Emitter Voltage VCEO 9.2 V Emitter to Base Voltage VEBO 2.8 V IC 750 mA 1.9 W SC Parameter Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C 2 Note Mounted on 34.2 cm 0.8 mm (t) glass epoxy PWB DI <R> Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10577EJ02V0DS (2nd edition) Date Published December 2007 NS The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NESG270034 THERMAL RESISTANCE (T A = +25C) Parameter Termal Resistance from Junction to Ratings Unit Rthj-a 65 C/W Note 2 Note Mounted on 34.2 cm 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (T A = +25C) Collector to Emitter Voltage Collector Current Input Power Note Symbol MIN. TYP. MAX. Unit VCE 6.0 7.2 V IC 600 750 mA Pin 20 23 dBm DI SC O NT IN Note Input power under conditions of VCE 6.0 V, f = 460 MHz UE Parameter D Ambient Symbol 2 Data Sheet PU10577EJ02V0DS NESG270034 ELECTRICAL CHARACTERISTICS (T A = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics ICBO VCB = 9.2 V, IE = 0 mA 1 A Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA 1 A VCE = 3 V, IC = 100 mA 80 120 180 19.5 dB DC Current Gain hFE Note RF Characteristics GL VCE = 6 V, IC (set) = 30 mA (RF OFF), 17.5 UE Linner Gain (1) D Collector Cut-off Current f = 460 MHz, Pin = 0 dBm Linner Gain (2) GL VCE = 6 V, IC (set) = 30 mA (RF OFF), 15 dB 31.5 33.5 dBm 31.5 dBm 60 % 50 % f = 900 MHz, Pin = 0 dBm Output Power (1) Pout VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 20 dBm Output Power (2) Pout VCE = 6 V, IC (set) = 30 mA (RF OFF), O NT IN f = 900 MHz, Pin = 20 dBm C Collector Efficiency (1) VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 20 dBm C Collector Efficiency (2) VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm Note Pulse measurement: PW 350 s, Duty Cycle 2% hFE CLASSIFICATION Rank Marking SQ 80 to 180 DI SC hFE Value FB Data Sheet PU10577EJ02V0DS 3 NESG270034 SC O NT IN UE D TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified) DI <R> Remark The graph indicates nominal characteristics. 4 Data Sheet PU10577EJ02V0DS DI SC O NT IN UE D NESG270034 Remark The graph indicates nominal characteristics. Data Sheet PU10577EJ02V0DS 5 O NT IN UE D NESG270034 DI SC Remark The graph indicates nominal characteristics. 6 Data Sheet PU10577EJ02V0DS NESG270034 O NT IN UE PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS D S-PARAMETERS DI SC Remark The graph indicates nominal characteristics. Data Sheet PU10577EJ02V0DS 7 NESG270034 O NT IN UE D EVALUATION CIRCUIT (f = 460 MHz) The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. SC EVALUATION BOARD (f = 460 MHz) Notes 1. 38 38 mm, t = 0.8 mm double sided copper clad glass epoxy PWB. 2. Back side: GND pattern DI 3. Solder gold plated on pattern 4. 8 : Through holes Data Sheet PU10577EJ02V0DS NESG270034 COMPONENT LIST Value Purpose C1 Murata 11 pF 1005 Input DC Block/Input RF Matching C2 Murata 9.5 pF 1005 Input RF Matching C3 Murata 39 pF 1005 Input DC Block/Output RF Matching C4 Murata 10 000 pF 1005 RF GND C5 Murata 10 000 pF 1005 RF GND L1 Toko 390 nH 2012 RF Block/Input RF Matching L2 Toko 47 nH 1608 L3 Toko 5.6 nH 2012 L4 Toko 5.1 nH 1608 R1 SSM 15 1005 R2 SSM 10 1005 UE Size (TYPE) D Maker RF Block/Output RF Matching Input RF Matching Output RF Matching Improve Stability Improve Stability DI SC O NT IN Component Data Sheet PU10577EJ02V0DS 9 NESG270034 PACKAGE DIMENSIONS DI SC O NT IN UE D 3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm) 8 Data Sheet PU10577EJ02V0DS Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: CEL: NESG270034-EV09-AZ