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Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
NPN SILICON GERMANIUM RF TRANSISTOR
NESG270034
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (2 W)
3-PIN POWER MINIMOLD (34 PKG)
Document No. PU10577EJ02V0DS (2nd edition)
Date Published December 2007 NS
FEATURES
•This product is suitable for medium output power (2 W) amplification
Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz
•Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V
•3-pin power minimold (34 PKG)
ORDERING INFORMATION
3-pin power minimold
(34 PKG) (Pb-Free) Note
• 12 mm wide embossed taping
•Pin 2 (Emitter) face the perforation side of the tape
Note Contains Lead in the part except the electrode terminals.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Collector to Base Voltage
Collector to Emitter Voltage
Note Mounted on 34.2 cm2 0.8 mm (t) glass epoxy PWB