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Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
NPN SILICON GERMANIUM RF TRANSISTOR
NESG270034
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (2 W)
3-PIN POWER MINIMOLD (34 PKG)
Document No. PU10577EJ02V0DS (2nd edition)
Date Published December 2007 NS
FEATURES
This product is suitable for medium output power (2 W) amplification
Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz
Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V
3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG270034
NESG270034-AZ
3-pin power minimold
(34 PKG) (Pb-Free) Note
25 pcs
(Non reel)
Magazine case
NESG270034-T1
NESG270034-T1-AZ
1 kpcs/reel
12 mm wide embossed taping
Pin 2 (Emitter) face the perforation side of the tape
Note Contains Lead in the part except the electrode terminals.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Symbol
Ratings
Unit
VCBO
25
V
VCEO
9.2
V
VEBO
2.8
V
IC
750
mA
Ptot Note
1.9
W
Tj
150
C
Tstg
65 to +150
C
Note Mounted on 34.2 cm2 0.8 mm (t) glass epoxy PWB
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Data Sheet PU10577EJ02V0DS
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NESG270034
THERMAL RESISTANCE (TA = +25C)
Symbol
Ratings
Unit
Rthj-a
65
C/W
Note Mounted on 34.2 cm2 0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (TA = +25C)
Symbol
MIN.
TYP.
MAX.
Unit
VCE
6.0
7.2
V
IC
600
750
mA
Pin
20
23
dBm
Note Input power under conditions of VCE 6.0 V, f = 460 MHz
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Data Sheet PU10577EJ02V0DS
3
NESG270034
ELECTRICAL CHARACTERISTICS (TA = +25C)
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
ICBO
VCB = 9.2 V, IE = 0 mA
1
A
IEBO
VEB = 1.0 V, IC = 0 mA
1
A
hFE Note
VCE = 3 V, IC = 100 mA
80
120
180
RF Characteristics
GL
VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 0 dBm
17.5
19.5
dB
GL
VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 0 dBm
15
dB
Pout
VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 20 dBm
31.5
33.5
dBm
Pout
VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm
31.5
dBm
C
VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 20 dBm
60
%
C
VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm
50
%
Note Pulse measurement: PW 350
s, Duty Cycle 2%
hFE CLASSIFICATION
Rank
FB
Marking
SQ
hFE Value
80 to 180
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Data Sheet PU10577EJ02V0DS
4
NESG270034
TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Remark The graph indicates nominal characteristics.
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Data Sheet PU10577EJ02V0DS
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NESG270034
Remark The graph indicates nominal characteristics.
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Data Sheet PU10577EJ02V0DS
6
NESG270034
Remark The graph indicates nominal characteristics.
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Data Sheet PU10577EJ02V0DS
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NESG270034
S-PARAMETERS
PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
Remark The graph indicates nominal characteristics.
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Data Sheet PU10577EJ02V0DS
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NESG270034
EVALUATION CIRCUIT (f = 460 MHz)
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
EVALUATION BOARD (f = 460 MHz)
Notes
1. 38 38 mm, t = 0.8 mm double sided copper clad glass epoxy PWB.
2. Back side: GND pattern
3. Solder gold plated on pattern
4. : Through holes
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Data Sheet PU10577EJ02V0DS
9
NESG270034
COMPONENT LIST
Component
Maker
Value
Size (TYPE)
Purpose
C1
Murata
11 pF
1005
Input DC Block/Input RF Matching
C2
Murata
9.5 pF
1005
Input RF Matching
C3
Murata
39 pF
1005
Input DC Block/Output RF Matching
C4
Murata
10 000 pF
1005
RF GND
C5
Murata
10 000 pF
1005
RF GND
L1
Toko
390 nH
2012
RF Block/Input RF Matching
L2
Toko
47 nH
1608
RF Block/Output RF Matching
L3
Toko
5.6 nH
2012
Input RF Matching
L4
Toko
5.1 nH
1608
Output RF Matching
R1
SSM
15
1005
Improve Stability
R2
SSM
10
1005
Improve Stability
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8 Data Sheet PU10577EJ02V0DS
NESG270034
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)
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Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
CEL:
NESG270034-EV09-AZ