VS-30WQ04FNPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 3.5 A FEATURES Base cathode 4, 2 * Popular D-PAK outline * Small foot print, surface mountable * Low forward voltage drop 1 Anode D-PAK (TO-252AA) 3 Anode * High frequency operation * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 3.5 A VR 40 V VF at IF See Electrical table IRM 24 mA at 125 C TJ max. 150 C Diode variation Single die EAS 8 mJ * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-30WQ04FNPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM VALUES UNITS 3.5 A 40 V IFSM tp = 5 s sine 500 A VF 3 Apk, TJ = 125 C 0.49 V -40 to +150 C TJ VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-30WQ04FNPbF UNITS 40 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 135 C, rectangular waveform Following any rated load condition and with rated VRRM applied VALUES UNITS 3.5 A Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 1 A, L = 16 mH 8.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse 500 80 Revision: 20-May-15 Document Number: 94198 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30WQ04FNPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 3A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 C 6A 3A TJ = 125 C 6A Maximum reverse leakage current See fig. 2 IRM (1) Threshold voltage VF(TO) Forward slope resistance rt Typical junction capacitance CT Typical series inductance LS Maximum voltage rate of change dV/dt TJ = 25 C VR = Rated VR TJ = 125 C TJ = TJ maximum VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 C Measured lead to lead 5 mm from package body Rated VR VALUES UNITS 0.53 0.67 V 0.49 0.62 2 mA 24 0.34 V 37.33 m 189 pF 5.0 nH 10 000 V/s VALUES UNITS -40 to +150 C 4.7 C/W Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to case RthJC TEST CONDITIONS DC operation See fig. 4 Approximate weight Marking device Case style D-PAK (similar to TO-252AA) 0.3 g 0.01 oz. 30WQ04FN Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 20-May-15 Document Number: 94198 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30WQ04FNPbF Vishay Semiconductors 100 100 TJ = 150 C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 10 TJ = 150 C TJ = 125 C TJ = 25 C 10 TJ = 125 C TJ = 100 C 1 TJ = 75 C 0.1 TJ = 50 C 0.01 TJ = 25 C 0.001 1 0 0.4 0.8 1.2 1.6 2.0 2.4 0 2.8 5 10 15 20 25 30 35 40 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 C 100 10 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 PDM 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 20-May-15 Document Number: 94198 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30WQ04FNPbF Vishay Semiconductors 3.0 155 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 150 145 Average Power Loss (W) Allowable Case Temperature (C) www.vishay.com DC 140 135 Square wave (D = 0.50) 80 % rated VR applied 130 125 120 115 2.5 2.0 RMS limit 1.5 1.0 DC 0.5 See note (1) 0 110 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IF (AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non- Repetitive Surge Current (A) IF (AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 20-May-15 Document Number: 94198 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30WQ04FNPbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 W Q 04 FN 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (3.5 A) 3 - Package identifier: TRL PbF 7 8 W = D-PAK 4 - Schottky "Q" series 5 - Voltage rating (04 = 40 V) 6 - FN = TO-252AA (D-PAK) 7 - None = Tube (50 pieces) TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 8 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95016 Part marking information www.vishay.com/doc?95059 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?95288 www.vishay.com/doc?95630 Revision: 20-May-15 Document Number: 94198 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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