IRF640S/L
PRELIMINARY HEXFET® Power MOSFET
PD - 9.902A
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.0
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** – – – 4 0
Thermal Resistance
°C/W
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V11 A
IDM Pulsed Drain Current 72
PD
@TA = 25°C Power Dissipation 3.1 W
PD @TC = 25°C Power Dissipation 130 W
Linear Derating Factor 1. 0 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 580 mJ
IAR Avalanche Current18 A
EAR Repetitive Avalanche Energy13 mJ
dv /d t Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
VDSS = 200V
RDS(on) = 0.18Ω
ID = 18A
2
D P a k
TO-262
S
D
G
7/22/97
lSurface Mount (IRF640S)
lLow-profile through-hole (IRF640L)
lAvailable in Tape & Reel (IRF640S)
lDynamic dv/dt Rating
l150°C Operating Temperature
lFast Switching
lFully Avalanche Rated
Third generation HEXFETs from international Rectifier provide the designer with the
best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The D2Pak is a surface mount power package capable of the accommodatingdie sizes
up to HEX-4. It provides the highest power capability and the lowest possible on-
resistance in any existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application. The through-hole version
(IRF640L) is available for low-profile applications.
Description
IRF640S/L
VDD =50V, starting TJ = 25°C, L =2.7mH
RG = 25Ω, IAS = 18A. (See Figure 11)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD ≤ 18A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF640 data and test conditions
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 18A, VGS = 0V
trr Reverse Recovery Time ––– 300 610 n s TJ = 25°C, IF = 18A
Qrr Reverse Recovery Charge ––– 3.4 7.1 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.29 ––– V/°C Reference to 25°C, ID =1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.18 ΩVGS =10V, ID = 11A
VGS(th) Gate Threshold Voltage 2. 0 –– – 4 .0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 6.7 ––– ––– S VDS = 50V, I D = 11A
––– ––– 25 µA VDS = 200V, VGS = 0V
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– ––– 70 ID = 18A
Qgs Gate-to-Source Charge ––– ––– 13 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 39 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 14 ––– VDD = 100V
trRise Time ––– 51 ––– ID = 18A
td(off) Turn-Off Delay Time ––– 45 –– – RG = 9.1Ω
tfFall Time ––– 36 ––– RD = 5.4Ω, See Fig. 10
Between lead,
––– ––– and center of die contact
Ciss Input Capacitance – – – 1300 ––– VGS = 0V
Coss Output Capacitance ––– 430 ––– pF V DS = 25V
Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS Drain-to-Source Leakage Current
nH
7.5
LSInternal Source Inductance
18
72
S
D
G
IRF640S/L
IRF640S/L
IRF640S/L
IRF640S/L
IRF640S/L
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRF640S/L
D2Pak Package Outline
D2Pak
Part Marking Information
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5.28 (.208)
4.78 (.188)
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15.49 (.610)
14.73 (.580)
3X 0.93 (.037)
0.69 (.027)
5.08 (.200)
3X 1.40 (.055)
1.14 (.045)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MAX.
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENS ION : INCH.
4 HEATSINK & LEAD DIMENSIO NS DO NOT INCLUDE BURRS.
0.55 (.022)
0.46 (.018)
0.25 (.010) M B A M MINIMUM RECO MM ENDED FOOTP RINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
LE AD ASS IG NMEN TS
1 - GATE
2 - DRAIN
3 - SOURCE
2.54 ( .100)
2X
PART NUMBER
INTERNATIONAL
RECTIFIER
L OGO DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
AS SEMBLY
LOT CODE
F530S
9B 1M
9246
A
IRF640S/L
Package Outline
TO-262 Outline
TO-262
Part Marking Information
IRF640S/L
Tape & Reel Information
D2Pak
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 7/97
3
4
4
TRR
FE ED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1. 75 (.0 69)
1. 25 (.0 49)
11.60 (.457 )
11.40 (.449 ) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.5 0 (. 532)
12.8 0 (. 504)
330.00
(14.173)
M A X.
27.4 0 (1.079 )
23.9 0 (.9 41)
60.0 0 (2.36 2)
MIN.
30.4 0 (1.19 7)
MAX.
26.40 (1. 039)
24.40 (.961)
NO TES :
1. C O M F ORM S T O EIA -418.
2. CONTROLLING DIMENSIO N: MILLIME TER.
3. DIME NS ION MEAS URE D @ HUB .
4. INCLU DES FLAN GE DISTORTION @ OUTER ED GE.
