DS30145 Rev. C-2 1 of 3 BAV99DW
BAV99DW
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
·Case: SOT-363, Molded Plastic
·Terminals: Solderable per MIL-STD-202,
Method 208
·Polarity: See Diagram
·Marking: KJG
·Weight: 0.006 grams (approx.)
·Case Material - UL Flammability Rating
Classification 94V-0
Mechanical Data
A
M
JL
FD
BC
H
K
AC
1
AC
2
C2
A1
A2
C1
Features
SOT-363
Dim Min Max
A0.10 0.30
B1.15 1.35
C2.00 2.20
D0.65 Nominal
E0.30 0.40
G1.80 2.20
H1.80 2.20
J¾0.10
K0.90 1.00
L0.25 0.40
M0.10 0.25
All Dimensions in mm
·Fast Switching Speed
·Ultra-Small Surface Mount Package
·For General Purpose Switching Applications
·High Conductance
·Two “BAV99” Circuits In One Package
Characteristic Symbol BAV99DW Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75 V
RMS Reverse Voltage VR(RMS) 53 V
Forward Continuous Current IFM 215 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0ms
@ t = 1.0s
IFSM
2.0
1.0
0.5
A
Power Dissipation (Note 1) Pd200 mW
Thermal Resistance Junction to Ambient Air (Note 1) RqJA 625 °C/W
Power Dissipation (Note 2) Pd300 mW
Thermal Resistance Junction to Ambient Air (Note 2) RqJA 417 °C/W
Operating and Storage Temperature Range Tj,T
STG -65 to +150 °C
Maximum Ratings @ TA= 25°C unless otherwise specified
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Device mounted on Alumina PCB, 0.4 inch x 0.3 inch x 0.024 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic Symbol Min Max Unit Test Condition
Maximum Forward Voltage VFM ¾
0.715
0.855
1.0
1.25
V
IF= 1.0mA
IF= 10mA
IF= 50mA
IF= 150mA
Maximum Peak Reverse Current IRM ¾
2.5
50
30
25
mA
mA
mA
nA
VR= 75V
VR= 75V, Tj= 150°C
VR= 25V, Tj= 150°C
VR= 20V
Junction Capacitance Cj¾2.0 pF VR= 0, f = 1.0MHz
Reverse Recovery Time trr ¾4.0 ns IF= IR= 10mA,
Irr = 0.1 x IR,R
L= 100W
Electrical Characteristics @ TA= 25°C unless otherwise specified
NEW PRODUCT
DS30145 Rev. C-2 2 of 3 BAV99DW
NEW PRODUCT
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device Packaging Shipping
BAV99DW-7 SOT-363 3000/Tape & Reel
(Note 3)
Ordering Information
Marking Information
KJG = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
KJG YM
KJG YM
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Year 1998 1999 2000 2001 2002 2003 2004
Code JKLM N OP
Date Code Key
DS30145 Rev. C-2 3 of 3 BAV99DW
1
10
100
1000
10,000
0 100 200
I , LEAKAGE CURRENT (nA)
R
T , JUNCTION TEMPERATURE (°C)
Fig. 2 Leakage Current vs Junction Temperature
j
V = 20V
R
10
1.0
100
1000
0.1
0.01
01
2
I , INSTANTANE
O
US F
O
RWARD CURRENT (mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
F
C , CAPACITANCE (pF)
j
f = 1MHz
V REVERSE VOLTAGE (V)
Fig. 3 Typical Junction Capacitance vs Reverse Voltag
e
R,
0.1 100101.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8