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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient Max Units 2N4124 625 5.0 83.3 *MMBT4124 350 2.8 200 357 mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N4124/MMBT4124, Rev A (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 A, IE = 0 30 V IC = 10 A, IC = 0 5.0 ICBO Collector Cutoff Current VCB = 20 V, IE = 0 50 nA IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 2.0 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 50 mA, IB = 5.0 mA VBE(sat) Base-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 120 60 360 0.3 V 0.95 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance Ccb Collector-Base Capcitance hfe Small-Signal Current Gain NF Noise Figure *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 100 kHz VBE = 0.5 V, IC = 0, f = 1.0 kHz VCB = 5.0 V, IE = 0, f = 100 kHz VCE = 10 V, IC = 2.0 mA, f = 1.0 kHz IC = 100 A, VCE = 5.0 V, RS =1.0k, f=10 Hz to 15.7 kHz 300 120 MHz 4.0 pF 8.0 pF 4.0 pF 480 5.0 dB 2N4124 / MMBT4124 NPN General Purpose Amplifier (continued) V CE = 5V 400 125 C 300 25 C 200 - 40 C 100 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1 0.8 = 10 - 40 C 25 C 0.6 125 C 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) 500 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBESAT- BASE-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.15 125 C 0.1 25 C 0.05 - 40 C 0.1 1 VCE = 5V 0.8 - 40 C 25 C 0.6 125 C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 10 f = 1.0 MHz VCB = 30V CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) 100 Capacitance vs Reverse Bias Voltage 500 10 1 0.1 25 1 10 I C - COLLECTOR CURRENT (mA) Base-Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature 100 = 10 50 75 100 125 TA - AMBIENT TEMPERATURE ( C) 150 5 4 3 C ibo 2 C obo 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 2N4124 / MMBT4124 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Noise Figure vs Source Resistance Noise Figure vs Frequency 12 I C = 1.0 mA R S = 200 10 V CE = 5.0V I C = 1.0 mA NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) 12 I C = 50 A R S = 1.0 k 8 I C = 0.5 mA R S = 200 6 4 2 I C = 100 A, R S = 500 0 0.1 1 10 f - FREQUENCY (kHz) 10 I C = 5.0 mA I C = 50 A 8 6 I C = 100 A 4 2 0 0.1 100 V CE = 40V I C = 10 mA 10 100 f - FREQUENCY (MHz) PD - POWER DISSIPATION (W) - CURRENT GAIN (dB) fe h 1 - DEGREES 0 20 40 60 80 100 120 140 160 180 h fe 1 1000 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 Turn-On Time vs Collector Current I B1 = I B2 = Ic VCC = 40V 10 TIME (nS) 15V t r @ V CC = 3.0V 2.0V 10 1 10 I C - COLLECTOR CURRENT (mA) 125 150 100 I B1 = I B2 = Ic 10 T J = 25C T J = 125C 10 t d @ VCB = 0V 5 50 75 100 TEMPERATURE (o C) Rise Time vs Collector Current 40V 100 25 500 t r - RISE TIME (ns) 500 100 Power Dissipation vs Ambient Temperature Current Gain and Phase Angle vs Frequency 50 45 40 35 30 25 20 15 10 5 0 1 10 R S - SOURCE RESISTANCE ( k ) 100 5 1 10 I C - COLLECTOR CURRENT (mA) 100 2N4124 / MMBT4124 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Storage Time vs Collector Current I B1 = I B2 = T J = 25C Fall Time vs Collector Current 500 Ic I B1 = I B2 = 10 t f - FALL TIME (ns) t S - STORAGE TIME (ns) 500 100 T J = 125C 10 5 T J = 125C 100 T J = 25C 1 10 I C - COLLECTOR CURRENT (mA) 5 100 1 10 I C - COLLECTOR CURRENT (mA) Current Gain h oe - OUTPUT ADMITTANCE ( mhos) V CE = 10 V f = 1.0 kHz T A = 25oC 100 10 0.1 1 I C - COLLECTOR CURRENT (mA) 1 1 I C - COLLECTOR CURRENT (mA) 10 V CE = 10 V f = 1.0 kHz T A = 25oC 10 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Voltage Feedback Ratio ) _4 V CE = 10 V f = 1.0 kHz T A = 25oC 10 0.1 0.1 100 10 Input Impedance 100 100 Output Admittance h re - VOLTAGE FEEDBACK RATIO (x10 h fe - CURRENT GAIN VCC = 40V 10 500 h ie - INPUT IMPEDANCE (k ) Ic 10 10 7 V CE = 10 V f = 1.0 kHz T A = 25oC 5 4 3 2 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 2N4124 / MMBT4124 NPN General Purpose Amplifier (continued) Test Circuits 3.0 V 275 300 ns 10.6 V Duty Cycle = 2% 10 K 0 C1 < 4.0 pF - 0.5 V < 1.0 ns FIGURE 1: Delay and Rise Time Equivalent Test Circuit 3.0 V 10 < t1 < 500 s t1 10.9 V 275 Duty Cycle = 2% 10 K 0 C1 < 4.0 pF 1N916 - 9.1 V < 1.0 ns FIGURE 2: Storage and Fall Time Equivalent Test Circuit 2N4124 / MMBT4124 NPN General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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