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2N4124 MMBT4124
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T A = 25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol Parameter Value Units
VCEO Colle ctor-Emitt er Voltage 25 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 200 mA
TJ, Tst
g
Operating and Storage Junction Temperature Ra nge -55 to +150 °C
Symbol Characteristic Max Units
2N4124 *MMBT4124
PDTotal Device Dissipatio n
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resista nce, Junction to Case 83.3 °C/W
RθJ
A
Thermal Re sistance, Junction to Ambient 200 357 °C/W
CBETO-92
C
B
E
SOT-23
Mark: ZC
2001 Fairchild Semiconductor Corporation
2N4124 / MMBT4124
2N4124/MMBT4124, Rev A
2N4124 / MMBT4124
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
ON CHARACTERISTICS*
V
(
BR
)
CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 25 V
V
(
BR
)
CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 30 V
V
(
BR
)
EBO Emitter-Base Breakdown Voltage IC = 10 µA, IC = 0 5.0 V
ICBO Collector Cutoff Current VCB = 20 V, IE = 0 50 nA
IEBO Emitter Cutoff Curren t VEB = 3.0 V, IC = 0 50 nA
hFE DC Current Gain IC = 2.0 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V 120
60 360
VCE(sat)Collector-Emitter Satu ration Voltage IC = 50 mA, IB = 5.0 mA 0.3 V
VBE(sat)Base-Emitter Sa tu ration Voltage IC = 50 mA, IB = 5.0 mA 0.95 V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Ba ndwidth Product IC = 10 mA, VCE = 20 V,
f = 100 MHz 300 MHz
Cobo Output Capacitance VCB = 5.0 V, IE = 0,
f = 100 kHz 4.0 pF
Cibo Input Capacitance VBE = 0.5 V, IC = 0,
f = 1.0 kHz 8.0 pF
Ccb Collector-Base Capcitance VCB = 5.0 V, IE = 0,
f = 100 kHz 4.0 pF
hfe Small-Signa l Current Gain VCE = 10 V, IC = 2.0 mA,
f = 1.0 kHz 120 480
NF Noise Figure IC = 100 µA, VCE = 5.0 V,
RS =1.0kΩ, f=10 Hz to 15.7 kHz 5.0 dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NPN General Purpose Amplifier
(continued)
2N4124 / MMBT4124
Typical Characteristics
Base-E mi tter ON Voltage v s
Collector C u rren t
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BA SE-EMITTER VOLTAGE (V)
BESAT
C
β = 10
25 °C
125 °C
- 40 °C
Colle ctor-Emitter Saturation
Volt ag e vs Collecto r Curren t
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
25 °C
C
β = 10
125 °C
- 40 °C
Collect or- Cut of f Curre nt
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 30V
CB
CBO
°
Capacitance vs
Reverse Bias Voltage
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cobo
C
ibo
f = 1.0 MHz
Typi cal Pulsed C urr ent Gai n
vs Col lector Cur ren t
0.1 1 10 100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPI CA L PULSED CU RR EN T GA IN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
Power Dissipation vs
A mbient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPER ATURE ( C)
P - POWER DI SSI PATION (W )
D
o
SOT-223
SOT-23
TO-92
Typical Characteristics (continued)
Noise Figure vs Frequency
0.1 1 10 100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
NF - NOISE FIG URE (dB)
V = 5.0V
CE
I = 100 µA, R = 500 Ω
CS
I = 1.0 m A
R = 200Ω
C
S
I = 50 µA
R = 1.0 kΩ
C
S
I = 0.5 mA
R = 200Ω
C
S
kΩ
Noise Figure vs Source Resistance
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF - NOISE FIGURE (dB)
I = 100 µA
C
I = 1.0 mA
C
S
I = 50 µA
C
I = 5.0 mA
C
θ - DEGREES
0
40
60
80
100
120
140
160
20
180
Current Gain and Phase Angle
vs Frequency
1 10 100 1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQU ENCY (MHz)
h - CURRENT GAIN (dB)
θ
V = 40V
CE
I = 10 mA
C
hfe
fe
Turn- On Time vs Collector Curr ent
110100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
B1
C
B2 Ic
10
40V
15V
2.0V
t @V = 0V
CB
d
t @V = 3.0V
CC
r
Rise Time vs Colle ctor Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - RISE TIME (ns)
I = I =
B1
C
B2 Ic
10
T = 125°C
T = 25°C
J
V = 40V
CC
r
J
2N4124 / MMBT4124
NPN General Purpose Amplifier
(continued)
2N4124 / MMBT4124
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Storage Time vs Collector Current
1 10 100
5
10
100
500
I - COL L ECTOR CUR REN T (mA)
t - STORAGE TIME (ns)
I = I =
B1
C
B2 Ic
10
S
T = 125°C
T = 25°C
J
J
Fall Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - FALL TIME (ns)
I = I =
B1
C
B2 Ic
10
V = 40V
CC
f
T = 125°C
T = 25°C
J
J
Cu rr ent Gain
0.1 1 10
10
100
500
I - COLLECTOR CURRENT (mA)
h - CURRE NT GAIN
V = 10 V
CE
C
fe
f = 1 .0 kHz
T = 25 C
A o
Output Admi tta n c e
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h - OU TPUT ADM IT TANCE ( mh os )
V = 10 V
CE
C
oe
f = 1.0 kH z
T = 25 C
A o
µ
Inpu t I m peda nce
0.1 1 10
0.1
1
10
100
I - COLLECT O R C URRE N T (mA)
h - I NPUT IMPED ANC E (k )
V = 10 V
CE
C
ie
f = 1.0 kHz
T = 25 C
A o
Ω
Voltage Feedback Ratio
0.1 1 10
1
2
3
4
5
7
10
I - COL LE CTOR CURRENT (m A)
h - V O LTAGE F EEDBA C K RATI O (x 1 0 )
V = 10 V
CE
C
re
f = 1.0 kHz
T = 25 C
A o
_4
Test Circuits
10 KΩΩ
ΩΩ
Ω
3.0 V
275 ΩΩ
ΩΩ
Ω
t1
C1 <<
<<
< 4.0 pF
Duty Cycle ==
==
= 2%
Duty Cycle ==
==
= 2%
<<
<<
< 1.0 ns
- 0.5 V
300 ns 10.6 V
10 < <
< <
< t1 <<
<<
< 500 µµ
µµ
µs 10.9 V
- 9.1 V
<<
<<
< 1.0 ns
0
0
10 KΩΩ
ΩΩ
Ω
3.0 V
275 ΩΩ
ΩΩ
Ω
C1 <<
<<
< 4.0 pF
1N916
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
2N4124 / MMBT4124
NPN General Purpose Amplifier
(continued)
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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